柔性低温多晶硅薄膜晶体管的弯曲稳定性
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摘要
研究了以聚酰亚胺为基板的p型低温多晶硅薄膜晶体管在不同弯曲半径下的偏压稳定性。当曲率半径从15 mm变到3 mm时,在拉伸弯曲状态下,阈值电压和平坦时保持一致(Vth=-1.34 V),迁移率μsat从45.65 cm~2/(V·s)降到45.17 cm~2/(V·s),开关比增大;在压缩弯曲状态下,转移特性曲线和平坦状态保持了非常好的一致性。在最小弯曲半径为3 mm时,进行了正负偏压稳定性测试,结果表明,器件依然具有很好的稳定性。
The bias stability of the flexible thin-film transistors under various bending radii was investigated. The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate. The changing region of the bending radius was from 15 mm to 3mm. For the stretch bending,the threshold voltage kept the same with the flat( Vth=-1. 34 V),the mobility reduced from 45. 65 cm~2/( V·s) to 45. 17 cm~2/( V·s),and Ion/Ioffincreased. For the compress bending,the transfer curve well kept the same with the flat. When the minimum bending radius was 3 mm,the device was tested under the positive and negative bias stress,and showed good stability. The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability.
The bias stability of the flexible thin-film transistors under various bending radii was investigated. The thin-film transistors with p-type low temperature poly-silicon channel layers were fabricated on polyimide substrate. The changing region of the bending radius was from 15 mm to 3mm. For the stretch bending,the threshold voltage kept the same with the flat( Vth=-1. 34 V),the mobility reduced from 45. 65 cm~2/( V·s) to 45. 17 cm~2/( V·s),and Ion/Ioffincreased. For the compress bending,the transfer curve well kept the same with the flat. When the minimum bending radius was 3 mm,the device was tested under the positive and negative bias stress,and showed good stability. The experiment results indicate that the flexible LTPS-TFTs have fine performance and stability.
引文
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[2]AKINWANDE D,PETRONE N,HONE J.Two-dimensional flexible nanoelectronics[J].Nat.Commun.,2014,5:5678.
[3]LIU K,YAO W H,WANG D Y,et al..A study of intrinsic amorphous silicon thin film deposited on flexible polymer substrates by magnetron sputtering[J].J.Non-Cryst.Solids,2016,449:125-132.
[4]QIN G X,YUAN H C,YANG H J,et al..High-performance flexible thin-film transistors fabricated using print-transfer-rable polycrystalline silicon membranes on a plastic substrate[J].Semicond.Sci.Technol.,2011,26(2):025005-1-6.
[5]VAN DER WILT P C,KANE M G,LIMANOV A B,et al..Low-temperature polycrystalline silicon thin-film transistors and circuits on flexible substrates[J].MRS Bull.,2006,31(6):461-465.
[6]LEE H Y,YE W H,LIN Y H,et al..Performance investigation of amorphous In Ga Zn O flexible thin-film transistors deposited on PET substrates[J].J.Disp.Technol.,2014,10(9):792-796.
[7]LIU J,BUCHHOLZ D B,CHANG R P H,et al..High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel[J].Adv.Mater.,2010,22(21):2333-2337.
[8]ZOCCO A T,YOU H,HAGEN J A,et al..Pentacene organic thin-film transistors on flexible paper and glass substrates[J].Nanotechnology,2014,25(9):094005-1-7.
[9]CHEN C Y,LEE J W,WANG S D,et al..Negative bias temperature instability in low-temperature polycrystalline silicon thin-film transistors[J].IEEE Trans.Electron Dev.,2006,53(12):2993-3000.
[10]PENG I H,LIU P T,WU T B.Effect of bias stress on mechanically strained low temperature polycrystalline silicon thin film transistor on stainless steel substrate[J].Appl.Phys.Lett.,2009,95(4):041909-1-3.
[11]LEE W G,LIM T H,JANG J.Flexibility of low temperature polycrystalline silicon thin-film transistor on tungsten foil[J].Jpn.J.Appl.Phys.,2011,50(3S):03CB03.
[12]CHOI M C,KIM Y,HA C S.Polymers for flexible displays:from material selection to device applications[J].Progr.Polym.Sci.,2008,33(6):581-630.
[13]GAO X Y,LIN L,LIU Y C,et al..LTPS TFT process on polyimide substrate for flexible AMOLED[J].J.Disp.Technol.,2015,11(8):666-669.
[14]KUOP C,JAMSHIDI-ROUDBARI A,HATALIS M.Effect of mechanical strain on mobility of polycrystalline silicon thinfilm transistors fabricated on stainless steel foil[J].Appl.Phys.Lett.,2007,91(24):243507-1-3.