等离子体处理对非晶IGZO柔性薄膜晶体管性能的影响（英文）
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摘要
研究了柔性基板上的薄膜晶体管,使用IGZO作为有源层,栅极绝缘层采用NH_3等离子体和N_2O等离子体分别进行处理,研究器件性能变化。结果表明等离子体类型及处理时间对阈值电压、场效应迁移率、开关比、亚阈值摆幅(SS)和偏压稳定性都有影响。TFT器件用NH_3等离子体处理10 s显示出最佳的器件性能,阈值电压达到0.34 V,场效应迁移率为15.97cm~2/Vs,开关比为6.33×107,亚阈值摆幅为0.36 V/dec。提出的柔性IGZO-TFT是下一代柔性显示驱动装置较好选择。
Thin film transistors(TFTs)using In-Ga-Zn Oxide(IGZO)as active layer and the gate insulator was treated with NH_3 plasma and N_2O plasma,respectively,which is fabricated on flexible Polyimid substrate.The performances of IGZO TFTs with different plasma species and treatment time are investigated and compared.The experiment results show that the plasma species and treatment time play an important role in the threshold voltage,field-effect mobility,I_(on)/I_(off) ratio,sub-threshold swing(SS)and bias stress stability of the devices.The TFT with a NH_3 plasma treatment for 10 second shows the best performance;specifically,threshold voltage of 0.34 V,field-effect mobility of 15.97 cm~2/Vs,I_(on)/I_(off) ratio of 6.33×10~7,and sub-threshold swing of 0.36 V/dec.The proposed flexible IGZO-TFTs can be used as driving devices in the next-generation flexible displays.
Thin film transistors(TFTs)using In-Ga-Zn Oxide(IGZO)as active layer and the gate insulator was treated with NH_3 plasma and N_2O plasma,respectively,which is fabricated on flexible Polyimid substrate.The performances of IGZO TFTs with different plasma species and treatment time are investigated and compared.The experiment results show that the plasma species and treatment time play an important role in the threshold voltage,field-effect mobility,I_(on)/I_(off) ratio,sub-threshold swing(SS)and bias stress stability of the devices.The TFT with a NH_3 plasma treatment for 10 second shows the best performance;specifically,threshold voltage of 0.34 V,field-effect mobility of 15.97 cm~2/Vs,I_(on)/I_(off) ratio of 6.33×10~7,and sub-threshold swing of 0.36 V/dec.The proposed flexible IGZO-TFTs can be used as driving devices in the next-generation flexible displays.
引文
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[13]Ding X Y,Qin C Q,Song J T,et al.The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition[J].Nanoscale Research Letter,2017,12:63.
[2]Zhou L S,Wanga A,Wu S C.All-Organic Active Matrix Flexible Display[J].Appl Phys Lett,2006,88:083502.
[3]Jeong K,Jin D U,Shin H S,et al.Flexible Full-Color AMOLED on Ultrathin Metal Foil[J].IEEE Electron Device Lett,2007,28:389-391.
[4]Plichta A,Weber A.Ultra-Thin Flexible Glass Substrates[C]//Proc Mater Res Soc Symp,2003,769:H9.1-H9.10.
[5]Cheng I C,Kattamis A,Long K,et al.Stress Control for Overlay Registration in a-Si:H TFTs on Flexible Organic Polymer-Foil Substrates[J].J Soc Inf Display,2005,13:563-568.
[6]Choi M H,Kim B S,Jang J.High-Performance Flexible TFT Circuits Using TIPS Pentacene and Polymer Blend on Plastic[J].IEEE Electron Device Lett,2012,33:1571-1573.
[7]Lim W,Jang J H,Kim S H,et al.High Performance Indium Gallium Zinc Oxide Thin Film Transistors Fabricated on Polyethylene Terephthalate Substrates[J].Appl Phys Lett,2008,93:082102.
[8]Chen C,Abe K,Kumomi H,et al.Density of States of a-In Ga Zn O from Temperature-Dependent Field-Effect Studies[J].IEEE Trans Electron Devices,2009,56:1177-1183.
[9]Hsu H H,Chang C Y,Cheng C H,et al.Fully Room-Temperature IGZO Thin Film Transistors Adopting Stacked Gate Dielectrics on Flexible Polycarbonate Substrate[J].Solid-State Electron,2013,89:194-197.
[10]Liu C,Wei M,Yang F,et al.Effects of Electrode Materials on The Performances of IGZO-Based Thin Film Transistor[J].Chin J of Lumin,2014,35:1365-1369.
[11]Jia T Y,Zhan R Z,Dong C Y.Simulation of the Stability of a-IGZO TFT-OLED Pixel Circuits[J].Chin J of Lumin,2013,34:1240-1244.
[12]Hsu H H,Chang C Y,Cheng C H.et al.Fully Room-Temperature IGZO Thin Film Transistors Adopting Stacked Gate Dielectrics on Flexible Polycarbonate Substrate[J].Solid-State Electronics,2013;89:194-197.
[13]Ding X Y,Qin C Q,Song J T,et al.The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition[J].Nanoscale Research Letter,2017,12:63.