非晶铟锌钨氧化物薄膜晶体管的电学性能和稳定性研究
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摘要
采用射频磁控溅射法制备了非晶铟锌钨氧化物(a-IZWO)薄膜和以此半导体薄膜为沟道层的薄膜晶体管。研究了沟道宽长比和退火时间对器件电学性能的影响。结果表明,沟道宽长比为400μm:400μm的器件经过120min200℃空气退火后其电学性能达到最佳,场效应迁移率达到7.29 cm~2/Vs,阈值电压为-2.86 V,电流开关比超过10~7,亚阈值摆幅低至0.13 V/decade。偏压稳定性测试结果证实了器件的偏压稳定性主要受到沟道层缺陷、背沟道表面氧离子和H_2O~+离子吸附等因素的影响。随着器件沟道宽长比不断增大,退火时间不断延长,器件受到这些因素的影响变小,稳定性越来越好。
The thin film transistors( TFTs),with channel layer made of magnetron-sputtered amorphous indium zinc tungsten oxides( a-IZWO),were fabricated on substrate of n-type thermal oxidized Si. The influence of the annealing conditions and channel width/length ratio on the performance and stability of TFTs was investigated. The results show that the width/length ratio and annealing time has a major impact. To be specific,annealed at 200℃ for 120 min in air,the optimized properties of TFT with channel width/length ratio of 400 μm: 400 μm included: a field effect mobility of 7. 29 cm~2/Vs,a threshold voltage of -2. 86 V,a current on/off ratio over 10~7,and a subthreshold swing of 0. 13 V/decade. As the annealing time and width/length ratio increased,the intrinsic oxygen vacancy density in the channel layer and adsorbed O~(-2)/H_2O~+ ions on the backchannel surfaces considerably decreased,resulting in an increasing enhancement of the gate bias stability.
The thin film transistors( TFTs),with channel layer made of magnetron-sputtered amorphous indium zinc tungsten oxides( a-IZWO),were fabricated on substrate of n-type thermal oxidized Si. The influence of the annealing conditions and channel width/length ratio on the performance and stability of TFTs was investigated. The results show that the width/length ratio and annealing time has a major impact. To be specific,annealed at 200℃ for 120 min in air,the optimized properties of TFT with channel width/length ratio of 400 μm: 400 μm included: a field effect mobility of 7. 29 cm~2/Vs,a threshold voltage of -2. 86 V,a current on/off ratio over 10~7,and a subthreshold swing of 0. 13 V/decade. As the annealing time and width/length ratio increased,the intrinsic oxygen vacancy density in the channel layer and adsorbed O~(-2)/H_2O~+ ions on the backchannel surfaces considerably decreased,resulting in an increasing enhancement of the gate bias stability.
引文
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[2]Fortunato E,Barquinha P,Martins R.Oxide Semiconductor Thin-Film Transistors:a Review of Recent Advances[J].Advanced Materials,2012,24(22):2945-2986
[3]Lin D,Pi S,Yang J,et al.Enhanced Stability of Thin Film Transistors with Double-Stacked Amorphous IWO/IWO:N Channel Layer[J].Semiconductor Science and Technology,2018,33(6):065001
[4]Yang J,Meng T,Yang Z,et al.Investigation of Tungsten Doped tin Oxide Thin Film Transistors[J].Journal of Physics D:Applied Physics,2015,48(43):435108
[5]ZHANG Q,PU H F,YUE L,et al.Investigation of Tungsten-Doped Indium Oxide Thin Film Based Diodes and TFTs[C].Proceedings of the 4th International Symposium on Transparent Conductive Materials(TCM2012),Greece:Crete,2012:9
[6]LI H L,QU M Y,ZHANG Q.Influence of Tungsten Doping on the Performance of Indium-Zinc-Oxide Thin-Film Transistors[J].Ieee Electron Device Letters,2013,34(10):1268-1270
[7]Fu R,Yang J,Chang W C,et al.The Influence of Annealing Temperature on Amorphous Indium-Zinc-Tungsten Oxide Thin-Film Transistors[J].Physica Status Solidi(a),2018,215(6):1700785
[8]Kizu T,Mitoma N,Miyanaga M,et al.Codoping of Zinc and Tungsten for Practical High-Performance Amorphous Indium-Based Oxide Thin Film Transistors[J].Journal of Applied Physics,2015,118(12):125702
[9]Park H W,Park K,Kwon J Y,et al.Effect of Active Layer Thickness on Device Performance of Tungsten-Doped In Zn O Thin-Film Transistor[J].IEEE Transactions on Electron Devices,2017,64(1):159-163
[10]Ji K H,Kim J I,Jung H Y,et al.Effect of High-Pressure Oxygen Annealing on Negative Bias Illumination StressInduced Instability of In Ga Zn O Thin Film Transistors[J].Applied Physics Letters,2011,98(10):103509
[11]Chowdhury M D H,Um J G,Jang J.Remarkable Changes in Interface O Vacancy and Metal-Oxide Bonds in Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by Long Time Annealing at 250℃[J].Applied Physics Letters,2014,105(23):233504
[12]Chen R,Zhou W,Sing Kwok H.Top-Gate Thin-Film Transistors Based on Ga N Channel Layer[J].Applied Physics Letters,2012,100(2):022111
[13]KANG D,LIM H,KIM C,et al.Amorphous Gallium Indium Zinc Oxide Thin Film Transistors:Sensitive to Oxygen Molecules[J].Applied Physics Letters,2007,90(19):192101
[14]MARTINS R,BARQUINHA P,FERREIRA I,et al.Role of Order and Disorder on the Electronic Performances of Oxide Semiconductor Thin Film Transistors[J].Journal of Applied Physics,2007,101(4):044505
[15]Liu P T,Chou Y T,Teng L F.Environment-Dependent Metastability of Passivation-Free Indium Zinc Oxide Thin Film Transistor after Gate Bias Stress[J].Applied Physics Letters,2009,95(23):233504
[16]Nguyen C P T,Trinh T T,Raja J,et al.Source/Drain Metallization Effects on the Specific Contact Resistance of Indium tin Zinc Oxide Thin Film Transistors[J].Materials Science in Semiconductor Processing,2015,39:649-653
[17]严海,蔡韵竹,张群,等.氮掺杂非晶氧化铟锌薄膜晶体管的器件稳定性改善研究[J].真空科学与技术学报,2015,(9):1054-1058
[18]Qu M,Chang C H,Meng T,et al.Stability Study of Indium Tungsten Oxide Thin‐Film Transistors Annealed Under Various Ambient Conditions[J].Physica Status Solidi,2017,A214(2):1600465
[19]Zhang J,Li X,Lu J,et al.Water Assisted Oxygen Absorption on the Instability of Amorphous In Al Zn O ThinFilm Transistors[J].RSC Advances,2014,4(7):3145-3148
[20]Conley J F.Instabilities in Amorphous Oxide Semiconductor Thin-Film Transistors[J].IEEE Transactions on Device and Materials Reliability,2010,10(4):460-475
[21]Fakhri M,Johann H,Gorrn P,et al.Water as Origin of Hysteresis in Zinc tin Oxide Thin-Film Transistors[J].ACS Applied Materials&Interfaces,2012,4(9):4453-4456