SiO-_2固态电解质中的质子特性对氧化物双电层薄膜晶体管性能的影响
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摘要
本文采用等离子体增强化学气相沉积技术(PECVD)在室温条件下制备了具有双电层效应的二氧化硅(SiO2)固体电解质薄膜,并以此SiO2薄膜作为栅介质制备了氧化铟锌(IZO)双电层薄膜晶体管.本文系统地研究了SiO2固体电解质中的质子特性对双电层薄膜晶体管性能的影响,研究结果表明,经过纯水浸泡的SiO2固体电解质薄膜可以诱导出较多的可迁移质子,因此表现出较大的双电层电容.由于SiO2固体电解质薄膜具有质子迁移特性,晶体管的转移特性曲线呈现出逆时针方向的洄滞现象,并且这一洄滞效应随着栅极电压扫描速率的增加而增大.进一步对薄膜晶体管的偏压稳定性进行测试,发现晶体管的阈值电压的变化遵循了拉升指数函数(stretched exponential function)关系.
SiO2-based solid state electrolyte films are deposited at room temperature by using the plasma-enhanced chemical vapor deposition(PECVD) technique. An electric-double-layer(EDL) effect has been observed. Then, indium-zincoxide thin-film transistors(IZO TFTs) are fabricated by using such SiO2 films as dielectrics in a self-assembling process through a shadow mask. The IZO films for source/drain electrodes and channel are deposited on the nanogranular SiO2 film by RF sputtering the IZO target in an Ar ambient. Such TFTs exhibit a good performance at an ultralow operation voltage of 1.5 V, with a high field-effect mobility of 11.9 cm2/Vs, a small subthreshold swing of 94.5 m V/decade, and a large current on-off ratio of 7.14 × 106. Effects of protons in the SiO2-based solid state electrolyte films on the electrical performances of the IZO TFTs are also studied. It is observed that a big EDL capacitance can be obtained for SiO2 films dipped in pure water, as a result of the fact that there are more protons in such SiO2 films. Because of the migration of protons in SiO2 electrolytes, an anti-clockwise hysteresis is observed on the transfer curve. Moreover, a bigger hysteresis is observed at a higher gate voltage scan rate. Gate bias stressing stabilities are also studied the shifts in threshold voltage are observed to obey a stretched exponential function.
SiO2-based solid state electrolyte films are deposited at room temperature by using the plasma-enhanced chemical vapor deposition(PECVD) technique. An electric-double-layer(EDL) effect has been observed. Then, indium-zincoxide thin-film transistors(IZO TFTs) are fabricated by using such SiO2 films as dielectrics in a self-assembling process through a shadow mask. The IZO films for source/drain electrodes and channel are deposited on the nanogranular SiO2 film by RF sputtering the IZO target in an Ar ambient. Such TFTs exhibit a good performance at an ultralow operation voltage of 1.5 V, with a high field-effect mobility of 11.9 cm2/Vs, a small subthreshold swing of 94.5 m V/decade, and a large current on-off ratio of 7.14 × 106. Effects of protons in the SiO2-based solid state electrolyte films on the electrical performances of the IZO TFTs are also studied. It is observed that a big EDL capacitance can be obtained for SiO2 films dipped in pure water, as a result of the fact that there are more protons in such SiO2 films. Because of the migration of protons in SiO2 electrolytes, an anti-clockwise hysteresis is observed on the transfer curve. Moreover, a bigger hysteresis is observed at a higher gate voltage scan rate. Gate bias stressing stabilities are also studied the shifts in threshold voltage are observed to obey a stretched exponential function.
引文
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[3]Xu H,Lan L F,Li M,Luo D X,Xiao P,Lin Z G,Ning H L,Peng J B 2014 Acta Phys.Sin.63 038501(in Chinese)[徐华,兰林锋,李民,罗东向,肖鹏,林振国,宁洪龙,彭俊彪2014物理学报63 038501]
[4]Chen Y Y,Wang X,Cai X K,Yuan Z J,Zhu X M,Qiu D J,Wu H Z 2014 Chin.Phys.B 23 026101
[5]Hoffman R L,Norris B J,Wager J F 2003 Appl.Phys.Lett.82 733
[6]Suresh A,Wellenius P,Dhawan A,Muth J 2007 Appl.Phys.Lett.90 123512
[7]Ozel T,Gaur A,Rogers J A,Shim M 2005 Nano.Lett.5 905
[8]Thiemann S,Sachnov S.Porscha S,Wasserscheid P,Zaumseil J 2012 J.Phys.Chem.C 116 13536
[9]Zhu D M,Men C L,Cao M,Wu G D 2013 Acta Phys.Sin.62 117305(in Chinese)[朱德明,门传玲,曹敏,吴国栋2013物理学报62 117305]
[10]Zhu L Q,Wu G D,Zhou Z M,Dou W,Zhang H L,Wan Q 2013 Appl.Phys.Lett.102 043501
[11]Guo D,Zhuo M,Zhang X,Xu C,Jiang J,Gao F,Wan Q,Li Q,Wang T 2013 Anal.Chim.Acta 773 83
[12]Guo Z J,Guo L Q,Zhu L Q,Zhu Y J 2014 J.Mater.Sci.Technol.http://dx.doi.org/10.1016/j.jmst.2014.04.015
[13]Zhu L Q,Wu G D,Zhou Z M,Dou W,Zhang H L 2013Nanoscale 5 1980
[14]Chen H S,Sun Z Y,Shao J C 2011 Bull.Chin.Ceram.Soc.30 0934(in Chinese)[陈和生,孙振亚,邵景昌2011硅酸盐通报30 0934]
[15]Jiang J 2012 Ph.D.Dissertation(Changsha:Hunan University)(in Chinese)[蒋杰2012博士学位论文(长沙:湖南大学)]
[16]Liu Y R,Su J,Lai P T,Yao R H 2014 Chin.Phys.B23 068501
[17]Lee S W,Suh D S,Lee S Y,Lee Y H 2014 Appl.Phys.Lett.104 163506
[18]Roh J,Kang C M,Kwak J,Lee C,Jung B J 2014 Appl.Phys.Lett.104 173301