激光脉冲串对电荷耦合器件积累损伤效应研究
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摘要
为了研究激光脉冲串对光电系统的损伤和致盲机理,开展了重频纳秒激光对黑白行间转移相机电荷耦合器件的损伤实验研究。实验结果表明:存在两种积累损伤效应机理,多个脉冲到达CCD靶面同一位置的损伤或致盲具有积累效应,多个脉冲积累损伤能够显著降低线损伤和全靶面损伤阈值,降低程度与脉冲个数、激光到靶能量密度有关。致盲机理与单脉冲致盲机理相同,均表现为器件垂直转移电路间及地间的短路;而激光脉冲串到达CCD靶面的不同位置也能够实现器件的功能性失效,其机制与单脉冲损伤显著不同,仅表现为线损伤的叠加,并未造成器件电路紊乱,功能性损伤阈值即对应线损伤阈值660 mJ/cm~2,而小于单次致盲阈值1 500~2 200 mJ/cm~2。
Experimental research on pulsed nanosecond laser irradiation on Charged Coupled Devie was carried out to understand the damage and blindness mechanism of multiple pulses interaction with EO systems.The results showed two distinctive damage effects and mechanisms.It exhibited damage and blindness accumulation effects and damage threshold reducing outcomes with multiple pulses arriving at the same spot on CCD,including point-to-line damage and line-to-full frame blindness.The threshold reducing outcomes is closely related with pulse number and laser fluence with the same mechanism as single short blindness.However,the damage mechanism for multiple-pulse damage to different pixels is obviously different,which attributes to a multiple vertical line damage superposed effect without electrical disorder.The functional blindness threshold is indentified with line damage threshold 660 mJ/cm~2,and evidently less than that of single-pulse blindness threshold 1 500-2 200 mJ/cm~2.
Experimental research on pulsed nanosecond laser irradiation on Charged Coupled Devie was carried out to understand the damage and blindness mechanism of multiple pulses interaction with EO systems.The results showed two distinctive damage effects and mechanisms.It exhibited damage and blindness accumulation effects and damage threshold reducing outcomes with multiple pulses arriving at the same spot on CCD,including point-to-line damage and line-to-full frame blindness.The threshold reducing outcomes is closely related with pulse number and laser fluence with the same mechanism as single short blindness.However,the damage mechanism for multiple-pulse damage to different pixels is obviously different,which attributes to a multiple vertical line damage superposed effect without electrical disorder.The functional blindness threshold is indentified with line damage threshold 660 mJ/cm~2,and evidently less than that of single-pulse blindness threshold 1 500-2 200 mJ/cm~2.
引文
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[2]Gao Liuzheng,Zhao Minwei,Zhang Wei,et al.Light field on silicon substrate of charge coupled device[J].Acta Optica Sinica,2016,36(12):1214004-1-5.(in Chinese)高刘正,赵民伟,张威,等.电荷耦合器件硅基底辐照光场研究[J].光学学报,2016,36(12):1214004-1-5.
[3]Deng Min,Sun Li,Zhou Xiaoyan,et al.Research on lifetime testing and failure analysis of silicon avalanche photoelectric detectors[J].Journal of Ordnance EquipmentEngineering,2016,37(8):160-163.(in Chinese)邓敏,孙莉,周小燕,等.硅雪崩光电探测器工作寿命试验及失效分析研究[J].兵器装备工程学报,2016,37(8):160-163.
[4]Bonse J,Baudach S,Krüger J,et al.Femtosecond laser ablation of silicon-modification thresholds and morphology[J].Appl Phys A,2002,74(1):19-25.
[5]Guo Shaofeng,Cheng Xiang′ai,Fu Xiquan,et al.Failure of array CCD irradiated by high-repetitive femto-second laser[J].High Power Laser and Particle Beams,2007,19(11):1783-1786.(in Chinese)郭少锋,程湘爱,傅喜泉,等.高重复频率飞秒激光对面阵CCD的干扰和破坏[J].强激光与粒子束,2007,19(11):1783-1786.
[6]Li Xingliang,Niu Chunhui,Ma Muyan,et al.Finite element simulation of damage characteristics of CCD detectors under single-laser-pulse irradiation[J].Laser Technology,2016,40(5):730-733.(in Chinese)栗兴良,牛春晖,马牧燕,等,单脉冲激光损伤CCD探测器的有限元仿真[J].激光技术,2016,40(5):730-733.
[7]Shen Hongbin,Shen Xueju,Zhou Bing,et al.Experimental study of 532 nm pulsed laser irradiating CCD[J].High Power Laser and Particle Beams,2009,21(10):1449-1454.(in Chinese)沈红斌,沈学举,周冰,等.532 nm脉冲激光辐照CCD实验研究[J].强激光与粒子束,2009,21(10):1449-1454.
[8]Cai Yue,Ye Xisheng,Ma Zhiliang,et al.Experiment of 170 ps laser pulse irradiation effect on visible plane array Si-CCD[J].Opt and Precision Eng,2011,19(2):457-462.(in Chinese)蔡跃,叶锡生,马志亮,等.170 ps激光脉冲辐照可见光面阵Si-CCD的实验[J].光学精密工程,2011,19(2):457-462.
[9]Li Zhiming,Nie Jinsong,Hu Yuze,et al.Heat accumulation effects on the ablation of silicon with high frequency femtosecond laser[J].Laser&Infrared,2017,47(4):410-415.(in Chinese)李志明,聂劲松,胡瑜泽,等,高频飞秒激光对硅材料烧蚀的热积累效应[J].激光与红外,2017,47(4):410-415.
[10]Zhong Hairong,Liu Tianhua,Lu Qisheng.Review on the laser-include damage mechanism study of photoelectric detector[J].High Power Laser and Particle Beams,2000,12(4):423-428.(in Chinese)钟海荣,刘天华,陆启生.激光对光电探测器的破坏机理研究综述[J].强激光与粒子束,2000,12(4):423-428.
[11]Shao Junfeng,Liu Yang,Wang Tingfeng,et al.Damage effect of charged coupled device with multiple-pulse picosecond laser[J].Acta Armamentarii,2014,35(9):1408-1413.(in Chinese)邵俊峰,刘阳,王挺峰,等.皮秒激光对电荷耦合器件多脉冲损伤效应研究[J].兵工学报,2014,35(9):1408-1413.