多孔Cu_2S@MoZn薄膜对电极的制备及其性能研究
|
摘要
本文采用磁控溅射法,以钠钙玻璃为基底,溅射一层MoZn合金为导电衬底,用盐酸刻蚀掉活泼金属Zn,获得多孔MoZn导电薄膜,再通过旋涂法,在多孔薄膜上涂上一层Cu_2S纳米晶作为催化材料层,经过高温退火处理,得到多孔Cu_2S@MoZn薄膜对电极。将其与CuInS_2敏化的光阳极、多硫电解质共同组成量子点敏化太阳能电池,采用扫描电镜、XRD、电池的J-V曲线测试、IPCE测试来表征和分析多孔Cu_2S@MoZn薄膜对电极的性能。
In this paper, a magnetron sputtering method was used to deposit a layer of MoZn alloy as a conductive substrate on the basis of soda-lime glass. The active metal Zn was etched away by hydrochloric acid to obtain a porous MoZn conductive film, which was then spin-coated. Porous coated with Cu_2S nanocrystals as catalytic material layer, subjected to high temperature annealing treatment to obtain porous Cu_2S@MoZn thin film counter electrode, which was combined with CuInS_2 sensitized photoanode and polysulfide electrolyte to form quantum dot sensitized solar cells. Scanning electron microscope, XRD, solar cells J-V curve test,IPCE test were used to characterize and analyze the performance of porous Cu2 S@MoZn film counter electrode.
In this paper, a magnetron sputtering method was used to deposit a layer of MoZn alloy as a conductive substrate on the basis of soda-lime glass. The active metal Zn was etched away by hydrochloric acid to obtain a porous MoZn conductive film, which was then spin-coated. Porous coated with Cu_2S nanocrystals as catalytic material layer, subjected to high temperature annealing treatment to obtain porous Cu_2S@MoZn thin film counter electrode, which was combined with CuInS_2 sensitized photoanode and polysulfide electrolyte to form quantum dot sensitized solar cells. Scanning electron microscope, XRD, solar cells J-V curve test,IPCE test were used to characterize and analyze the performance of porous Cu2 S@MoZn film counter electrode.
引文
[1]Pan Z, Zhao K, Wang J, et al. Near Infrared Absorption of CdSexTe1–x Alloyed Quantum Dot Sensitized Solar Cells with More than 6% Efficiency and High Stability[J]. Acs Nano,2013, 7(6):5215-5222.
[2]Hishikawa Y. Characterization of the Silicon-Based Thin Film Multi-Junction Solar Cells[J]. Mrs Proceedings, 2005, 862.
[3]Williams K J, Nelson C A, Xin Y, et al. Hot electron injection from graphene quantum dots to TiO2[J]. Acs Nano, 2013,7(2):1388-1394.
[4]Shi J F, Fan Y, Xu X Q, et al. Influence of Preparation Conditions on the Properties of Cu2S Photocathodes[J]. Acta Physico-Chimica Sinica, 2012, 28(4):857-864.
[5]Li T L, Lee Y L, Teng H. High-performance quantum dot-sensitized solar cells based on sensitization with CuInS2 quantum dots/CdS heterostructure[J]. Energy&Environmental Science, 2012, 5(1):5315-5324.
[6]Yang Z, Chen C Y, Liu C W, et al. Quantum Dot–Sensitized Solar Cells Featuring CuS/CoS Electrodes Provide 4.1% Efficiency[J]. Advanced Energy Materials, 2011, 1(2):259-264.
[2]Hishikawa Y. Characterization of the Silicon-Based Thin Film Multi-Junction Solar Cells[J]. Mrs Proceedings, 2005, 862.
[3]Williams K J, Nelson C A, Xin Y, et al. Hot electron injection from graphene quantum dots to TiO2[J]. Acs Nano, 2013,7(2):1388-1394.
[4]Shi J F, Fan Y, Xu X Q, et al. Influence of Preparation Conditions on the Properties of Cu2S Photocathodes[J]. Acta Physico-Chimica Sinica, 2012, 28(4):857-864.
[5]Li T L, Lee Y L, Teng H. High-performance quantum dot-sensitized solar cells based on sensitization with CuInS2 quantum dots/CdS heterostructure[J]. Energy&Environmental Science, 2012, 5(1):5315-5324.
[6]Yang Z, Chen C Y, Liu C W, et al. Quantum Dot–Sensitized Solar Cells Featuring CuS/CoS Electrodes Provide 4.1% Efficiency[J]. Advanced Energy Materials, 2011, 1(2):259-264.