LiNbO_3单晶薄膜体声波谐振器的研制
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摘要
该文介绍了一种采用智能截割(Smart Cut~(TM))技术制备的单晶铌酸锂(LiNbO_3)薄膜体声波谐振器。采用COMSOL有限元仿真软件从材料和结构两方面对LiNbO_3薄膜体声波谐振器进行优化设计,以实现高机电耦合系数,并通过Smart Cut~(TM)工艺方法制备了高性能Z切-LiNbO_3单晶薄膜作为谐振器的压电层,最终得到LiNbO_3薄膜体声波谐振器的谐振频率为3 847.5 MHz,反谐振频率为3 986.25 MHz,插入损耗为1.81 dB,谐振器有效机电耦合系数达到8.3%。
The single crystal lithium niobate(LiNbO_3) thin film bulk acoustic resonator(FBAR) fabricated by Smart Cut~(TM) technology is introduced in this paper. The COMSOL finite element simulation(FEM) software is used to optimize the material and structure of LiNbO_3 thin film FBAR in order to achieve high electromechanical coupling coefficient. A high-performance Z-cut LiNbO_3 thin film is fabricated as the piezoelectric layer of the resonator by Smart Cut~(TM) technology. The resulting LiNbO_3 thin film bulk acoustic resonator has a resonant frequency of 3 847.5 MHz and an anti-resonant frequencies of 3 986.25 MHz, an insertion loss of 1.81 dB, and an effective electromechanical coupling coefficient of 8.3%.
The single crystal lithium niobate(LiNbO_3) thin film bulk acoustic resonator(FBAR) fabricated by Smart Cut~(TM) technology is introduced in this paper. The COMSOL finite element simulation(FEM) software is used to optimize the material and structure of LiNbO_3 thin film FBAR in order to achieve high electromechanical coupling coefficient. A high-performance Z-cut LiNbO_3 thin film is fabricated as the piezoelectric layer of the resonator by Smart Cut~(TM) technology. The resulting LiNbO_3 thin film bulk acoustic resonator has a resonant frequency of 3 847.5 MHz and an anti-resonant frequencies of 3 986.25 MHz, an insertion loss of 1.81 dB, and an effective electromechanical coupling coefficient of 8.3%.
引文
[1] YANG Q,PANG W,ZHANG D,et al.A wideband bulk acoustic wave filter with modified lattice configuration[C]//Phoenix,AZ,USA:2015 IEEE MTT-S International Microwave Symposium,2015.
[2] BARON T,MASSON J,ROMAND J P,et al.BAW pressure sensor on LiNbO3 membrane lapping[C]//Noordwijk,Netherlands:EFTF-2010 24th European Frequency and Time Forum,IEEE,2013.
[3] TODA K,MIZUTANI K.Propagation characteristics of plate waves in a Z-cut X-propagation LiTaO3 thin plate[J].Electronics & Communications in Japan,2010,72(8):11-21.
[4] KADOTA M,OGAMI T,YAMAMOTO K,et al.High-frequency Lamb wave device composed of LiNbO3 thin film[J].Japanese Journal of Applied Physics,2009,48(7S):1940-1944.
[5] YU Y C,CHEN C H,NIU H,et al.Crystal-ion-slicing lithium niobate film performed by 250 keV 4He ion implantation[J].Nuclear Inst & Methods in Physics Research B,2007,256(1):558-560.
[2] BARON T,MASSON J,ROMAND J P,et al.BAW pressure sensor on LiNbO3 membrane lapping[C]//Noordwijk,Netherlands:EFTF-2010 24th European Frequency and Time Forum,IEEE,2013.
[3] TODA K,MIZUTANI K.Propagation characteristics of plate waves in a Z-cut X-propagation LiTaO3 thin plate[J].Electronics & Communications in Japan,2010,72(8):11-21.
[4] KADOTA M,OGAMI T,YAMAMOTO K,et al.High-frequency Lamb wave device composed of LiNbO3 thin film[J].Japanese Journal of Applied Physics,2009,48(7S):1940-1944.
[5] YU Y C,CHEN C H,NIU H,et al.Crystal-ion-slicing lithium niobate film performed by 250 keV 4He ion implantation[J].Nuclear Inst & Methods in Physics Research B,2007,256(1):558-560.