光交换芯片的串扰分析与DQPSK信号传输实验
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摘要
串扰和插入损耗是表征光交换芯片传输性能的重要参数。将串扰与插入损耗特性结合起来,提出一种分析光交换集成芯片串扰的理论模型,考虑了串扰对开关路由的依赖性。实验测量了基于马赫-曾德尔干涉仪(MZI)的4×4拜尼兹结构的光交换集成芯片的串扰和插入损耗系数,以及不同开关路由状态下40 Gb/s差分四相相移键控(DQPSK)信号的传输性能,实验结果与理论分析基本一致。根据测得的串扰和插入损耗系数,计算了16×16光交换芯片串扰范围。
Crosstalk and insertion loss are two important parameters for optical switching integrated chips. A new theoretical model of crosstalk in optical switching integrated chips, which is dependent on insertion loss and switch routing states, is put forward. As an example, the crosstalk and insertion loss coefficients of the optical switching integrated chip consisting of Mach-Zehnder interferometer(MZI)-based 4×4 Benes structure are measured by the40 Gb/s differential quadrature phase shift keying(DQPSK) experiment under different switch routing states. The experimental results are consistent with the theoretical analysis. The crosstalk range for the16×16 Benes-type optical switching chips is calculated according to the given crosstalk and insertion loss coefficients.
Crosstalk and insertion loss are two important parameters for optical switching integrated chips. A new theoretical model of crosstalk in optical switching integrated chips, which is dependent on insertion loss and switch routing states, is put forward. As an example, the crosstalk and insertion loss coefficients of the optical switching integrated chip consisting of Mach-Zehnder interferometer(MZI)-based 4×4 Benes structure are measured by the40 Gb/s differential quadrature phase shift keying(DQPSK) experiment under different switch routing states. The experimental results are consistent with the theoretical analysis. The crosstalk range for the16×16 Benes-type optical switching chips is calculated according to the given crosstalk and insertion loss coefficients.
引文
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5 L Lu,L Zhou,X Li,et al..Low-power 2×2 silicon electro-optic switches based on double-ring assisted Mach-Zehnder interferometers[J].Opt Lett,2014,39(6):1633-1636.
6 L Lu,L Zhou,Z Li,et al..Broadband 4×4 nonblocking silicon electrooptic switches based on Mach-Zehnder interferometers[J].IEEE Photonics Journal,2015,7(1):1-8.
7 Liu Yi,Tong Xiaogang,Yu Jinlong,et al..All-optical switching in silicon-on-insulator serially coupled double-ring resonator based on thermal nonlinear effect[J].Chinese J Lasers,2013,40(2):0205006.刘毅,仝晓刚,于晋龙,等.基于热非线性效应的硅基串联双微环谐振腔全光开关[J].中国激光,2013,40(2):0205006.
8 Liu Ke,Mou Sixuan,Huang Hui,et al..Design and simulation of silicon-based rectangular Mach-Zehnder 2×2 thermo-optical switch[J].Acta Photonica Sinica,2014,43(2):0213001.刘克,牟思璇,黄晖,等.硅基矩形结构马赫-曾德2×2热光开关的设计与仿真[J].光子学报,2014,43(2):0213001.
9 Yang Jian,Chen Weiwei,Wang Wanjun,et al..A 4×4 MMI-MZ optical switch matrix on SOI based on carrier injection[J].Journal of Optoelectronics·Laser,2013,24(1):16-20.杨建,陈伟伟,王皖君,等.基于载流子注入的SOI 4×4 MMI-MZ光开关阵列[J].光电子·激光,2013,24(1):16-20.
10 J J O Pires,L G C Cancela.Theoretical insights into the impact of coherent and incoherent crosstalk on optical DPSK signals[J].J Lightwave Technol,2010,28(19):2766-2774.
11 Wang Hao,Qu Pengfei,Tian Zijun,et al..Optimal design for extinction ratio of SOI electro-opticalswitch[J].Semiconductor Optoelectronics,2015,36(3):375-378.王皓,瞿鹏飞,田自君,等.一种提高SOI电光开关消光比的优化设计[J].半导体光电,2015,36(3):375-378.
12 Zheng Chuantao,Ma Chunsheng,Yan Xin,et al..Improved design of a polymer Mach-Zehnderelectro-optic switch with a wide spectrum of 110 nm[J].Chinese J Lasers,2010,37(1):136-141.郑传涛,马春生,闫欣,等.110 nm宽频谱马赫-曾德尔电光开关的改进设计[J].中国激光,2010,37(1):136-141.
13 H Zhou,Y Zhao,W Wang,et al..Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches[J].Opt Express,2009,17(9):7043-7051.
14 D G Sun,Z Hu,S Abdul-Majid,et al..Limitation factor analysis for silicon-on-insulator waveguide Mach-Zehnder interference-based electro-optic switch[J].J Lightwave Technol,2011,29(17):2592-2600.
15 J Xing,Z Li,Y Yu,et al..Low cross-talk 2×2 silicon electro-optic switch matrix with a double-gate configuration[J].Opt Lett,2013,38(22):4774-4776.
16 B C Lin,C T Lea.Crosstalk analysis for microring based optical interconnection networks[J].J Lightwave Technol,2012,30(15):2415-2420.