一维纳米硅光子晶体的制备与优化
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摘要
采用双槽电化学腐蚀法制备了纳米多孔硅,主要研究了腐蚀时间和腐蚀电流对重掺杂p型(100)硅衬底上制备的多孔硅层有效光学厚度的影响,采用U-4100光谱仪、场发射扫描电子显微镜(FESEM)技术对所制备的多孔硅光子晶体的结构和有效光学厚度进行了分析表征。研究结果表明,通过合理地选择腐蚀时间和腐蚀电流,可以比较精确地制备特定有效光学厚度的多孔硅薄膜,此方法可广泛应用于纳米多孔硅光子晶体的制备中。
It is difficult to fabricate nice photonic crystal on high doped p-Si by electrochemical etching process.In this paper,the effects of the etching time and etching current on effective optical thickness(EOT)of the porous silicon layer prepared on p-type silicon substrate were investigated.The structure and EOT of porous silicon photonic crystal were studied by the spectrometer(U-4100)and field emission scanning electron microscopy(FE-SEM).And it is revealed that if the etching time and etching current are reasonably selected,the EOT of porous silicon can be accurately prepared.And the method can be widely applied for the fabrication of porous silicon photonic crystal.
It is difficult to fabricate nice photonic crystal on high doped p-Si by electrochemical etching process.In this paper,the effects of the etching time and etching current on effective optical thickness(EOT)of the porous silicon layer prepared on p-type silicon substrate were investigated.The structure and EOT of porous silicon photonic crystal were studied by the spectrometer(U-4100)and field emission scanning electron microscopy(FE-SEM).And it is revealed that if the etching time and etching current are reasonably selected,the EOT of porous silicon can be accurately prepared.And the method can be widely applied for the fabrication of porous silicon photonic crystal.
引文
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[2]Xia J,Rossi A M,Murphy T E.Laser-written nanoporous silicon ridge waveguide for highly sensitive optical sensors[J].Opt.Lett.,2012,37(2):256-258.
[3]Wei X,Weiss S M.Guided mode biosensor based on grating coupled porous silicon waveguide[J].Opt.Express,2011,19(12):11330-11339.
[4]Ilham A N,Rafaie H A,Abdullah S,et al.The effect of current density on nanostructured porous silicon[J].Nanoscience and Nanotechnol.,2009(1136):815-819.
[5]房振乾,胡明,窦雁巍.双槽电化学腐蚀法制备多孔硅的孔隙率研究[J].压电与声光,2007,29(2):230-233.
[6]Blackwood D J,Zhang Y.Porous silicon:Influence of etching temperature on microstructure and luminescence[J].Surface Rev.and Lett.,2001,8(5):429-433.
[7]钟福如,吕小毅,贾振红,等.电解液浓度对双槽法腐蚀多孔硅的影响[J].半导体光电,2010,31(4):550-552,556.
[8]Thnissen M,Berger M G,Billat S,et al.Analysis of the depth homogeneity of p-PS by reflectance measurements[J].Thin Solid Films,1997,297(1/2):92-96.
[9]Manotas S,Agullo-Rueda F,Moreno J D,et al.Depth-resolved microspectroscopy of porous silicon multilayers[J].Appl.Phys.Lett.,1999,75(7):977-979.
[10]傅献彩.物理化学(下)[M].北京:高等教育出版社,1995:509-542.
[11]周俊,谢克文,王晓红,等.基于微机械的多孔硅牺牲层技术[J].固体电子学研究与进展,2004,1(24):73-76.