PECVD工艺对SiO_xN_y光学薄膜红外吸收特性的影响
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摘要
为了研究SiO_xN_y光学薄膜在红外区的应用特性.文中采用PECVD技术沉积折射率为1.60的SiO_xN_y光学薄膜,设计制造了相同制备工艺参数(功率、温度、压强)的不同薄膜厚度样片和不同制备工艺参数的相同厚度的两类实验样片,通过对SiO_xN_y薄膜的红外透过率进行测试,分析该薄膜的红外光谱特性.实验结果表明,SiOxNy光学薄膜在红外区(8~12μm)的红外窗口内有明显的吸收峰存在,在制造工艺参数不变时,薄膜吸收峰值大小随着厚度的增加而增大,波长变化范围为9~11.5μm;不同的SiO_xN_y薄膜制备工艺参数对该薄膜吸收峰的峰值大小和位置的影响不同,主要波长变化范围为10~11.5μm.
The paper studies the application characteristics of SiO_xN_y optical thin-film in the infrared region.The PECVD technology was used to deposit SiOxNyoptical thin film whose refractive index is 1.60.Two kinds of experimental samples were designed and manufactured,one with the same preparation parameters(power,temperature and pressure)but different thickness,and the other with different preparation parameters but the same thickness.Through testing the infrared transmittance of the SiO_xN_y thin-film,its infrared spectrum characteristics were analyzed.The experimental results show that the SiO_xN_y optical thin-film has obvious absorption peaks in the infrared window of the infrared region(8~12μm).When the manufacturing process parameters are kept unchanged,the absorption peak of the thin-film increases with the thickness and the wavelength changes from 9 to 11.5μm.Different processing parameters exert different influence on the size and position of the absorption peaks.The main wavelength changes between 10 and 11.5μm.
The paper studies the application characteristics of SiO_xN_y optical thin-film in the infrared region.The PECVD technology was used to deposit SiOxNyoptical thin film whose refractive index is 1.60.Two kinds of experimental samples were designed and manufactured,one with the same preparation parameters(power,temperature and pressure)but different thickness,and the other with different preparation parameters but the same thickness.Through testing the infrared transmittance of the SiO_xN_y thin-film,its infrared spectrum characteristics were analyzed.The experimental results show that the SiO_xN_y optical thin-film has obvious absorption peaks in the infrared window of the infrared region(8~12μm).When the manufacturing process parameters are kept unchanged,the absorption peak of the thin-film increases with the thickness and the wavelength changes from 9 to 11.5μm.Different processing parameters exert different influence on the size and position of the absorption peaks.The main wavelength changes between 10 and 11.5μm.
引文
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[2]王晓泉,汪雷.PECVD淀积氮化硅薄膜性质研究[J].太阳能学报,2004,25(3):341.WANG Xiaoquan,WANG Lei.Study of the Properties of Deposition SiOxNy Thin-films by PECVD[J].Acta Energiae Solaris Sinica,2004,25(3):341.(in Chinese)
[3]杭凌侠,张霄,周顺.PECVD工艺参数对SiO2薄膜光学性能的影响[J].西安工业大学学报,2010,30(2):227.HANG Lingxia,ZHANG Xiao,ZHOU Shun.Study of the Effect of PECVD Processing Parameters on Optical Characteristics of SiO2 Thin-films[J].Xi’an Technological University Sinica,2010,30(2):227.(in Chinese)
[4]ALAYO M I.On the Nitrogen and Oxygen Incorporation in Plasma-enhanced Chemical Vapor Deposition SiOxNy Films[J].Thin Solid Films,2002,402(1):154.
[5]MARTIROSYAN K S,HOVHANNISYAN A S.Calculation of Reflectance of Porous Silicon Doublelayer Antireflection Coating for Silicon Solar Cells[J].Physica Status Solidi,2007,4(6):2103.
[6]王鹏飞,丁士进,张卫,等.用PECVD制备掺氟氧化硅低介电常数薄膜[J].微电子学,2000,30(5):347.WANG Pengfei,DING Shijin,ZHANG Wei,Act.Doping F To Low Dielectric Constant SiOxNy Thin-films by PECVD[J].Microelectronics,2000,30(5):347.(in Chinese)
[7]周顺,刘卫国,蔡长龙,等.氮氧化硅薄膜红外吸收特性的研究[J].兵工学报,2011,32(10):1225.ZHOU Shun,LIU W G,CAI C L,et al.Infrared Absorption Properties of Silicon Oxynitride Films[J].Acta Armamentarii,2011,32(10):1255.(in Chinese)
[8]闻震利,曹晓宁.沉积温度对等离子增强化学气相沉积法制备的SiNx:H薄膜特性的影响[J].物理化学学报,2011,27(6),1531.WEN Zhenli,CAO Xiaoning.Study on Deposition Temperature of Preparing SiNx:H Thin-films by PECVD[J].Acta Physico-Chimica Sinica,2011,27(6),1531.(in Chinese)
[9]SIVOTHTHAMAN S,GHARGHI M.Graded Silicon Based PECVD Thin Film for Photovoltaic Applications[J].Proceedings of SPIE,2007,6674:66740A-1.
[10]张霄,杭凌侠.PECVD技术制备光学减反射膜工艺探索[J].光学技术,2011,37(1):97.ZHANG Xiao,HANG Lingxia.Study on the Preparation Process of Optical Anti-reflective Films by PECVD[J].Optical Technique,2011,37(1):97.(in Chinese)