聚合物ESD抑制器测试方法与性能研究
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摘要
比较了传输线脉冲(TLP)波形和人体金属模型(HMM)波形作为静电放电(ESD)防护器件测试注入波形时的测试精确度,强调了在动态测试中使用TLP的优势。从微观机理角度分析,计算了载流子输运方程与电流连续性方程,提出了聚合物材料ESD抑制器的防护性能表征参量。设计和搭建了等效ESD测试系统模型,通过TLP方法研究了膜状ESD抑制器的防护性能。结果表明,膜状聚合物ESD抑制器有良好的静态、动态防护特性,同时薄型覆膜结构更适合有高频多点防护需求的电路设计。
The test accuracy of transimission line pulse(TLP) and Human-metal model(HMM) current waveforms used in electrostatic discharge(ESD) protection devices testing was evaluated, and the advantages of using TLP in the dynamic test were emphasized. Reasonable protective performance parameters of Polymer material ESD suppressor were presented from microscopic mechanism through the calculation of carrier transport equation and current continuity equation. By designing and establishing an equivalent ESD test system, the shielding property of membraniform ESD suppressor was analyzed through TLP methods. According to the results, the membrane-like polymer ESD suppressor has good static and dynamic protection characteristics, and the thin film-covering structure is more suitable for the circuit design with high frequency and multi-point ESD protection requirements.
The test accuracy of transimission line pulse(TLP) and Human-metal model(HMM) current waveforms used in electrostatic discharge(ESD) protection devices testing was evaluated, and the advantages of using TLP in the dynamic test were emphasized. Reasonable protective performance parameters of Polymer material ESD suppressor were presented from microscopic mechanism through the calculation of carrier transport equation and current continuity equation. By designing and establishing an equivalent ESD test system, the shielding property of membraniform ESD suppressor was analyzed through TLP methods. According to the results, the membrane-like polymer ESD suppressor has good static and dynamic protection characteristics, and the thin film-covering structure is more suitable for the circuit design with high frequency and multi-point ESD protection requirements.
引文
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[13] Chen Shenli, Lee Minhua. TLP characterization and leakage-biasing-voltage (VLB) correlations in MOSFET measurements[C]. 2014 International Symposium on Computer, Consumer and Control (IS3C), Taichung, 2014:199-202.
[14] 王振兴,武占成,张希军,等. ESD防护器件测试系统性能研究[J]. 河北科技大学学报,2011,32(S1):67-70.
[15] 郭瑶, 徐晓英, 叶宇辉,等. TVS二极管标称参数与静电放电防护能力研究[J]. 固体电子学研究与进展, 2015,35(4):383-387.
[16] 李勇, 谢海燕, 宣春,等. (HPM2015)TVS二极管的参数提取实验[J]. 强激光与粒子束, 2016, 28(3):3202.
[17] Lv Z, Yan N, Bao B. Pin-pin ESD protection for electro-explosive device under severe human body ESD[J]. Microelectronics Reliability, 2017, 75: 37-42.
[2] 买云. 保护器件的选择导则[J]. 电力系统通信,1996,(04):41-47.
[3] Vassilev V, Thijs S, Segura P L, et al. ESD–RF co-design methodology for the state of the art RF-CMOS blocks[J]. Microelectronics Reliability, 2005, 45(2): 255-268.
[4] Jansen P, Thijs S, Linten D, et al. RF ESD protection strategies - the design and performance trade-off challenges[C]. Custom Integrated Circuits Conference Proceedings of the IEEE, San Jose, 2005:489-496.
[5] 郭瑶,叶宇辉. 电压诱变阻膜包线材料特性研究[C].中国物理学会第十八届全国静电学术会议会议论文集,2013:445.
[6] 刘尚合,武占成. 静电放电及危害防护[M]. 北京:北京邮电大学出版社,2004:83-87.
[7] 彭圻平,阮军洲,刘永恩. 电子设备中的ESD保护设计[J]. 无线电工程,2013,43(06):61-64.
[8] Maloney T J, Jiang Lei, Poon S S, et al. Achieving electrothermal stability in interconnect metal during ESD pulses[C]. 2013 IEEE International Reliability Physics Symposium (IRPS), Anaheim, 2013:EL.1.1-EL.1.8.
[9] Caignet F, Monnereau N, Nolhier N, et al. Behavioral ESD protection modeling to perform system level ESD efficient design[C]. 2012 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC), Singapore, 2012:401-404.
[10] 朱志炜,郝跃. TLP应力下深亚微米GGNMOSFET特性的仿真[J]. 半导体学报,2005,26(10):1968-1974.
[11] Xi Y F, Malobabic S, Vashchenko V, et al. Correlation between TLP, HMM, and system-level ESD pulses for Cu metallization[J]. IEEE Transactions on Device and Materials Reliability, 2013,14(1):446-450.
[12] 徐晓英, 甘瑛洁, 浦实,等. ESD防护器件HMM和TLP测试方法及性能评价[J]. 高电压技术, 2017, 43(4):1348-1353.
[13] Chen Shenli, Lee Minhua. TLP characterization and leakage-biasing-voltage (VLB) correlations in MOSFET measurements[C]. 2014 International Symposium on Computer, Consumer and Control (IS3C), Taichung, 2014:199-202.
[14] 王振兴,武占成,张希军,等. ESD防护器件测试系统性能研究[J]. 河北科技大学学报,2011,32(S1):67-70.
[15] 郭瑶, 徐晓英, 叶宇辉,等. TVS二极管标称参数与静电放电防护能力研究[J]. 固体电子学研究与进展, 2015,35(4):383-387.
[16] 李勇, 谢海燕, 宣春,等. (HPM2015)TVS二极管的参数提取实验[J]. 强激光与粒子束, 2016, 28(3):3202.
[17] Lv Z, Yan N, Bao B. Pin-pin ESD protection for electro-explosive device under severe human body ESD[J]. Microelectronics Reliability, 2017, 75: 37-42.