SiC功率模块开关特性测试研究
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摘要
碳化硅(SiC)功率模块在开关时电压、电流变化率高,测试系统的寄生电感容易引起电压、电流振荡,使得开关特性的准确测试成为难题。这里通过研制低寄生电感的开关特性测试平台,结合不同封装的SiC功率模块,研究了栅极电阻、不同测试系统对开关性能的影响,测试系统寄生电感越大,需选用的栅极电阻越大,否则电压、电流的振荡影响开关特性测试;测试系统寄生电感越小,可选用的栅极电阻越小,其开关损耗越小。
The voltage and current rate of silicon carbide(SiC)power module are high,and the voltage and current oscillation are easily caused by parasitic inductance of the test system and which makes the accurate test of switching characteristics become a problem.The influence of gate resistance and different test systems on turn-on and turn-off characteristics is studied using the development of a low parasitic inductance test platform and the different SiC power modules.The greater parasitic inductance of the test system,the greater gate resistance needs to be employed,otherwise the voltage and current oscillation will affect the test.The test system has the smaller parasitic inductance,the smaller gate resistance and the smaller switching loss.
The voltage and current rate of silicon carbide(SiC)power module are high,and the voltage and current oscillation are easily caused by parasitic inductance of the test system and which makes the accurate test of switching characteristics become a problem.The influence of gate resistance and different test systems on turn-on and turn-off characteristics is studied using the development of a low parasitic inductance test platform and the different SiC power modules.The greater parasitic inductance of the test system,the greater gate resistance needs to be employed,otherwise the voltage and current oscillation will affect the test.The test system has the smaller parasitic inductance,the smaller gate resistance and the smaller switching loss.
引文
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[2]谷彤,程士东,郭清,等.一种低寄生电感IGBT半桥模块[J].机电工程,2014,31(4):527-531.
[3]梁美.碳化硅功率器件调整应用关键技术研究[D].北京:北京交通大学,2017.
[4]IEC60747-8.Semiconductor Devices—Discrete Devices—Part 8:Field-effect Transistors[S].2010.
[5]LI Yandong.Research on Dynamic Voltage Restorer With Phase Locked Loop and Control Method[D].Xi'an:Xi'an Jiaotong University,2004.
[6]武晶晶.SiC MOSFET驱动电路及开关过程振荡问题研究[D].北京:北京交通大学,2018.