Carrier transport via V-shaped pits in InGaN/GaN MQW solar cells
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摘要
Carrier transport via the V-shaped pits(V-pits) in InGaN/GaN multiple-quantum-well(MQW) solar cells is numerically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the flat quantum wells. As the barrier thickness of the flat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.
Carrier transport via the V-shaped pits(V-pits) in InGaN/GaN multiple-quantum-well(MQW) solar cells is numerically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the flat quantum wells. As the barrier thickness of the flat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.
Carrier transport via the V-shaped pits(V-pits) in InGaN/GaN multiple-quantum-well(MQW) solar cells is numerically investigated. By simulations, it is found that the V-pits can act as effective escape paths for the photo-generated carriers. Due to the thin barrier thickness and low indium composition of the MQW on V-pit sidewall, the carriers entered the sidewall QWs can easily escape and contribute to the photocurrent. This forms a parallel escape route for the carries generated in the flat quantum wells. As the barrier thickness of the flat MQW increases, more carriers would transport via the V-pits. Furthermore, it is found that the V-pits may reduce the recombination losses of carriers due to their screening effect to the dislocations. These discoveries are not only helpful for understanding the carrier transport mechanism in the InGaN/GaN MQW, but also important in design of the structure of solar cells.
引文
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[11]Chen X,Zhao B J,Ren Z W,Tong J H,Wang X F,Zhuo X J,Zhang J,Li D W,Yi H X and Li S T 2013 Chin.Phys.B 22 078402
[12]Liang M M,Weng G E,Zhang J Y,Cai X M,L¨X Q,Ying L Y and Zhang B P 2014 Chin.Phys.B 23 054211
[13]Wu H Y,Ma Z G,Jiang Y,Wang L,Yang H J,Li Y F,Zuo P,Jia H Q,Wang W X,Zhou J M,Liu W M and Chen H 2016 Chin.Phys.B 250117803
[14]Rajabi K,Cao W Y,Shen T H,Ji Q B,He J,Yang W,Li L,Li D,Wang Q and Hu X D 2015 Chin.Phys.Lett.32 027802
[15]Lang J R,Young N G,Farrell R M,Wu Y R and Speck J S 2012 Appl.Phys.Lett.101 181105
[16]Hangleiter A,Hitzel F,Netzel C,Fuhrmann D,Rossow U,Ade G and Hinze P 2005 Phys.Rev.Lett.95 127402
[17]Quan Z,Wang L,Zheng C,Liu J and Jiang F 2014 J.Appl.Phys.116183107
[18]Kim J,Cho Y H,Ko D S,Li X S,Won J Y,Lee E,Park S H,Kim J Yand Kim S 2014 Opt.Express 22 A857
[19]Li Y,Yun F,Su X,Liu S,Ding W and Hou X 2014 J.Appl.Phys.116123101
[20]ATLAS by SILVACO Inc.,Santa Clara,CA,America
[21]Fiorentini V and Bernardini F 1999 Phys.Rev.B 60 8849
[22]Sala F D,Carlo A D,Lugli P,Bernardini F,Fiorentini V,Scholz R and Jancu J 1999 Appl.Phys.Lett.74 2002
[23]Zhang H,Miller E J,Yu E T,Poblenz C and Speck J S 2004 Appl.Phys.Lett.84 4644
[24]Xia C S,Li ZM S and Sheng Y 2013 Appl.Phys.Lett.103 233505
[25]Tomiya S,Kanitani Y,Tanaka S,Ohkubo T and Hono K 2011 Appl.Phys.Lett.98 181904
[26]Wu X,Liu J,Quan Z,Xiong C,Zheng C,Zhang J,Mao Q and Jiang F2014 Appl.Phys.Lett.104 221101
[27]Vurgaftman I,Meyer J R and Rammohan L R 2001 J.Appl.Phys.895815
[28]Wu J,Walukiewicz W,Yu K M,Ager J W,Haller E E,Lu H and Schaff W J 2002 Appl.Phys.Lett.80 4741
[29]Wang K,Lian C,Su N,Jena D and Timler J 2007 Appl.Phys.Lett.91232117
[30]Zhang X,Wang X,Xiao H,Yang C,Ran J,Wang C,Hou Q and Li J2007 J.Phys.D 40 7335
[31]Wierer J J,Koleske D D and Lee S R 2012 Appl.Phys.Lett.100 111119
[2]Bhuiyan A G,Sugita K,Hashimoto A and Yamamoto A 2012 IEEE J.Photovolt.2 276
[3]Holec D,Zhang Y,Sridhara Rao D V,Kappers M J,Mc Aleese C and Humphreys C J 2008 J.Appl.Phys.104 123514
[4]Jani O,Ferguson I,Honsberg C and Kurtz S 2007 Appl.Phys.Lett.91132117
[5]Dahal R,Pantha B,Li J,Lin J Y and Jiang H X 2009 Appl.Phys.Lett.94 063505
[6]Lai K Y,Lin G J,Lai Y L,Chen Y F and He J H 2010 Appl.Phys.Lett.96 081103
[7]Valduezafelip S,Mukhtarova A,Grenet L,Bougerol C,Durand C,Eymery J and Monroy E 2014 Appl.Phys.Express 7 032301
[8]Choi S,Shim J,Kim D,Jeong H,Jho Y,Song Y and Lee D 2013 Appl.Phys.Lett.103 033901
[9]Redaelli L,Mukhtarova A,Valduezafelip S,Ajay A,Bougerol C,Himwas C,Faurevincent J,Durand C,Eymery J and Monroy E 2014Appl.Phys.Lett.105 131105
[10]Dahal R,Li J,Aryal K,Lin J Y and H.X.Jiang 2010 Appl.Phys.Lett.97 073115
[11]Chen X,Zhao B J,Ren Z W,Tong J H,Wang X F,Zhuo X J,Zhang J,Li D W,Yi H X and Li S T 2013 Chin.Phys.B 22 078402
[12]Liang M M,Weng G E,Zhang J Y,Cai X M,L¨X Q,Ying L Y and Zhang B P 2014 Chin.Phys.B 23 054211
[13]Wu H Y,Ma Z G,Jiang Y,Wang L,Yang H J,Li Y F,Zuo P,Jia H Q,Wang W X,Zhou J M,Liu W M and Chen H 2016 Chin.Phys.B 250117803
[14]Rajabi K,Cao W Y,Shen T H,Ji Q B,He J,Yang W,Li L,Li D,Wang Q and Hu X D 2015 Chin.Phys.Lett.32 027802
[15]Lang J R,Young N G,Farrell R M,Wu Y R and Speck J S 2012 Appl.Phys.Lett.101 181105
[16]Hangleiter A,Hitzel F,Netzel C,Fuhrmann D,Rossow U,Ade G and Hinze P 2005 Phys.Rev.Lett.95 127402
[17]Quan Z,Wang L,Zheng C,Liu J and Jiang F 2014 J.Appl.Phys.116183107
[18]Kim J,Cho Y H,Ko D S,Li X S,Won J Y,Lee E,Park S H,Kim J Yand Kim S 2014 Opt.Express 22 A857
[19]Li Y,Yun F,Su X,Liu S,Ding W and Hou X 2014 J.Appl.Phys.116123101
[20]ATLAS by SILVACO Inc.,Santa Clara,CA,America
[21]Fiorentini V and Bernardini F 1999 Phys.Rev.B 60 8849
[22]Sala F D,Carlo A D,Lugli P,Bernardini F,Fiorentini V,Scholz R and Jancu J 1999 Appl.Phys.Lett.74 2002
[23]Zhang H,Miller E J,Yu E T,Poblenz C and Speck J S 2004 Appl.Phys.Lett.84 4644
[24]Xia C S,Li ZM S and Sheng Y 2013 Appl.Phys.Lett.103 233505
[25]Tomiya S,Kanitani Y,Tanaka S,Ohkubo T and Hono K 2011 Appl.Phys.Lett.98 181904
[26]Wu X,Liu J,Quan Z,Xiong C,Zheng C,Zhang J,Mao Q and Jiang F2014 Appl.Phys.Lett.104 221101
[27]Vurgaftman I,Meyer J R and Rammohan L R 2001 J.Appl.Phys.895815
[28]Wu J,Walukiewicz W,Yu K M,Ager J W,Haller E E,Lu H and Schaff W J 2002 Appl.Phys.Lett.80 4741
[29]Wang K,Lian C,Su N,Jena D and Timler J 2007 Appl.Phys.Lett.91232117
[30]Zhang X,Wang X,Xiao H,Yang C,Ran J,Wang C,Hou Q and Li J2007 J.Phys.D 40 7335
[31]Wierer J J,Koleske D D and Lee S R 2012 Appl.Phys.Lett.100 111119