Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates

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英文篇名：Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quantum-Well Light-Emitting Diodes with V-Shaped Pits Grown on Si Substrates 作者：吴庆丰 ; 曹盛 ; 莫春兰 ; 张建立 ; 王小兰 ; 全知觉 ; 郑畅达 ; 吴小明 ; 潘拴 ; 王光绪 ; 丁杰 ; 徐龙权 ; 刘军林 ; 江风益 英文作者：Qing-feng Wu;Sheng Cao;Chun-lan Mo;Jian-li Zhang;Xiao-lan Wang;Zhi-jue Quan;Chang-da Zheng;Xiao-ming Wu;Shuan Pan;Guang-xu Wang;Jie Ding;Long-quan Xu;Jun-lin Liu;Feng-yi Jiang;National Institute of LED on Si Substrate,Nanchang University; 中文刊名：WLKB 英文刊名：中国物理快报(英文版) 机构：National Institute of LED on Si Substrate,Nanchang University; 出版日期：2018-09-07 出版单位：Chinese Physics Letters 年：2018 期：v.35 基金：Supported by the National Key R&D Program of China under Grant Nos 2016YFB0400600 and 2016YFB0400601;; the State Key Program of the National Natural Science Foundation of China under Grant No 61334001;; the National Natural Science Foundation of China under Grant Nos 21405076,11674147,61604066,51602141 and 11604137;; the Key Technology Research and Development Program of Jiangxi Province under Grant Nos 20165ABC28007 and 20171BBE50052;; Jiangxi Province Postdoctoral Science Foundation Funded Project under Grant No 2015KY32 语种：英文; 页：WLKB201809021 页数：5 CN：09 ISSN：11-1959/O4 分类号：99-103

摘要

Effect of hydrogen(H_2) treatment during the GaN barrier growth on the electroluminescence performance of green In GaN/GaN single-quantum-well light-emitting diodes(LEDs) grown on Si substrates is experimentally investigated. We prepare two LED samples with different carrier gas compositions during the growth of GaN barrier. In the H_2 free LED, the GaN barrier is grown in full nitrogen(N_2) atmosphere. For the other H_2 treated LED, a mixture of N_2 and H_2 was used as the carrier gas. It is observed that V-shaped pits decrease in size after H_2 treatment by means of the scanning electron microscope. Due to the fact that the p–n junction interface would be closer to the p-GaN as a result of smaller V-shaped pits, the tunneling barrier for holes to inject into the In GaN quantum well would become thicker after H_2 treatment. Hence, the external quantum efficiency of the H_2 treated LED is lower compared to the H_2 free LED. However, LEDs would exhibit a better leakage behavior after H_2 treatment during the GaN barrier growth because of more effective blocking of the threading dislocations as a result of the H_2 etching at V-shaped pits.
        Effect of hydrogen(H_2) treatment during the GaN barrier growth on the electroluminescence performance of green In GaN/GaN single-quantum-well light-emitting diodes(LEDs) grown on Si substrates is experimentally investigated. We prepare two LED samples with different carrier gas compositions during the growth of GaN barrier. In the H_2 free LED, the GaN barrier is grown in full nitrogen(N_2) atmosphere. For the other H_2 treated LED, a mixture of N_2 and H_2 was used as the carrier gas. It is observed that V-shaped pits decrease in size after H_2 treatment by means of the scanning electron microscope. Due to the fact that the p–n junction interface would be closer to the p-GaN as a result of smaller V-shaped pits, the tunneling barrier for holes to inject into the In GaN quantum well would become thicker after H_2 treatment. Hence, the external quantum efficiency of the H_2 treated LED is lower compared to the H_2 free LED. However, LEDs would exhibit a better leakage behavior after H_2 treatment during the GaN barrier growth because of more effective blocking of the threading dislocations as a result of the H_2 etching at V-shaped pits.

引文

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