24～30 GHz高精度低附加相移数控衰减器
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摘要
基于0.18μm CMOS工艺,设计并实现了一种5位高精度低附加相移数控衰减器。该衰减器的衰减动态范围为15.5 dB,步进为0.5 dB。采用了T型衰减结构和SPDT型衰减结构的衰减网络。采用了悬浮栅和悬浮衬底,提高了衰减精度,减小了插入损耗。采用了相位补偿网络,有效降低了衰减器的附加相移。测试结果表明,在24～30 GHz频带范围内,衰减步进为0.5 dB,插入损耗小于8 dB,衰减误差均方根(RMS)小于0.45 dB,附加相移小于±5°。芯片尺寸为1.2 mm×0.3 mm。
A 5-bit high accuracy low phase error digital attenuator was designed and implemented in a 0.18 μm CMOS technology. The digital attenuator had a dynamic attenuation range of 15.5 dB with a step resolution of 0.5 dB. Attenuation structures of T-type and SPDT-type were chosen for the attenuation networks. The floating gate and floating body was applied to enhance the attenuation accuracy and reduce the insertion loss. A phase compensation network was applied to reduce the phase error. In the 24～30 GHz pass band, the results showed that the attenuation step was 0.5 dB, the insertion loss was less than 8 dB, the attenuation amplitude error(RMS) was 0.45 dB, and the phase error was ±5°. The total chip size was 1.2 mm×0.3 mm.
A 5-bit high accuracy low phase error digital attenuator was designed and implemented in a 0.18 μm CMOS technology. The digital attenuator had a dynamic attenuation range of 15.5 dB with a step resolution of 0.5 dB. Attenuation structures of T-type and SPDT-type were chosen for the attenuation networks. The floating gate and floating body was applied to enhance the attenuation accuracy and reduce the insertion loss. A phase compensation network was applied to reduce the phase error. In the 24～30 GHz pass band, the results showed that the attenuation step was 0.5 dB, the insertion loss was less than 8 dB, the attenuation amplitude error(RMS) was 0.45 dB, and the phase error was ±5°. The total chip size was 1.2 mm×0.3 mm.
引文
[1] BAE J,CAM N.Somerecent developments of millimeter-wave RFIC attenuators [C]// IEEE 21st Int Conf Microwave Radar & Wireless Commun.Krakow,Poland.2016:1-3.
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[3] MIN B W,REBEIZ G M.A 10-50 GHz CMOS distributed step attenuator with low loss and low phase imbalance [J].IEEE J Sol Sta Circ,2007,42(11):2547-2554.
[4] KU B H,HONG S.6-bit CMOS digital attenuator with low phase variations for band phased-array systems [J].IEEE Trans Microwave Theo Tech,2010,58(7):1651- 1663.
[5] CHO M K,BAEK D,KIM J G.DC-20 GHz 5 bit CMOS digital step attenuator with low insertion loss and phase error [J].Microwave Optical Tech Lett,2013,55(4):762-764.
[6] CAROSI D,BETTIDI A,NANNI A,et al.A mixed-signal X-band SiGe multi-function control MMIC for phased array radar applications [C]// 39th Europ Microwave Conf.Rome,Italy.2009:38-41.
[7] BAE J,CAM N.A novel concurrent 22-29/57-64 GHz dual-band CMOS step attenuator with low phase variations [J].IEEE Trans Microwave Theo Tech,2016,64(6):1867-1875.
[2] ZHAO J,ZHANG B,YANG X F.A 25-30 GHz 6-bit digital attenuator with high accuracy and low insertion loss [C]// IEEE MTT-S Int Wireless Symp.Poznan,Poland.2016:1-3.
[3] MIN B W,REBEIZ G M.A 10-50 GHz CMOS distributed step attenuator with low loss and low phase imbalance [J].IEEE J Sol Sta Circ,2007,42(11):2547-2554.
[4] KU B H,HONG S.6-bit CMOS digital attenuator with low phase variations for band phased-array systems [J].IEEE Trans Microwave Theo Tech,2010,58(7):1651- 1663.
[5] CHO M K,BAEK D,KIM J G.DC-20 GHz 5 bit CMOS digital step attenuator with low insertion loss and phase error [J].Microwave Optical Tech Lett,2013,55(4):762-764.
[6] CAROSI D,BETTIDI A,NANNI A,et al.A mixed-signal X-band SiGe multi-function control MMIC for phased array radar applications [C]// 39th Europ Microwave Conf.Rome,Italy.2009:38-41.
[7] BAE J,CAM N.A novel concurrent 22-29/57-64 GHz dual-band CMOS step attenuator with low phase variations [J].IEEE Trans Microwave Theo Tech,2016,64(6):1867-1875.