摘要
引入一种典型的p型半导体材料CuPc,采用反式钙钛矿太阳能电池结构,利用热蒸发沉积方法将其作为电池的空穴传输层,在低温条件下制备电池器件.对不同厚度CuPc膜对钙钛矿电池性能的影响进行了优化,采用电流-电压测试、扫描电镜、原子力显微镜和X-射线衍射等方法分析了电池的光电性能和薄膜质量.研究结果表明:热蒸发沉积的CuPc层具有良好的平整性和覆盖性,当其厚度为10 nm时,器件在刚性基底上取得了15.37%的最高光电转化效率,在柔性基底上取得了12.66%的最高光电转化效率.该电池制备过程简单、成本低且重复性高,为进一步制备大面积、高效率以及柔性化的钙钛矿太阳能电池提供了参考.
A typical p-type semiconductor material CuPc was introduced as hole transport layer in inverted planar solar cell structure,CuPc films were prepared by thermal evaporation deposition,and the device was prepared under low temperature conditions.The effects of different CuPc films thickness on the properties of perovskite solar cells were optimized,and the properties of cells and CuPc films were analyzed by current-voltage measurement,scanning electron microscopy,atomic force microscopy and X-ray diffraction.Research results show that the thermal evaporation deposited CuPc exhibits good flatness and coverage,and when the thickness was 10 nm,the device achieves the highest power conversion efficiency of 15.37% on the rigid substrate and 12.66% on the flexible substrate.This device has the advantages of simple preparation process,low cost and high reproducibility,which provides a reference of further preparation of large-area,high-efficiency and flexible perovskite solar cells.
引文
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