2～20GHz宽带单片集成双向放大器
|
摘要
基于分布式放大器理论,设计了一款基于GaAs赝配高电子迁移率晶体管(PHEMT)工艺的2~20GHz宽带单片集成双向放大器。该款放大器将两个独立放大器与开关控制电路集成,通过开关控制放大器的正反向导通,实现双向放大器接收和发射状态的切换。其中放大器采用的是宽带分布式低噪声放大器,开关控制电路的控制电平为0V和-5V。测试结果表明,该款放大器在+5V工作电压下,工作电流为60mA,在2~20GHz的宽带频率内实现小信号增益大于14dB,1dB压缩点输出功率大于11dBm,噪声系数小于5.5dB。双向放大器的芯片尺寸为3.1mm×2.1mm。
Based on the theory of distributed amplifiers,a broadband monolithic integrated bilateral amplifier was designed. The bilateral amplifier with the frequency from 2 GHz to 20 GHz was fabricated by Ga As pseudomorphic high electron mobility transistor( PHEMT) process. The bilateral amplifier consisted of two separate amplifiers and the switch control circuit. The positive and negative conductions of the amplifier were controlled by the switching,and the switching of the receiving and transmitting states of the bilateral amplifier was realized. The wideband distributed amplifier was used in bilateral amplifier and the switch control circuit worked with 0 V and- 5 V supply voltages. The test results show that the bilateral amplifier works in 60 m A operation current with + 5 V supply voltage. In the frequency band of 2- 20 GHz,the gain of the bilateral amplifier is greater than 14 d B,the output power of 1d B compression point is greater than 11 d Bm,and the noise factor is lower than 5. 5 d B. The size of the bilateral amplifier chip is 3. 1 mm × 2. 1mm.
Based on the theory of distributed amplifiers,a broadband monolithic integrated bilateral amplifier was designed. The bilateral amplifier with the frequency from 2 GHz to 20 GHz was fabricated by Ga As pseudomorphic high electron mobility transistor( PHEMT) process. The bilateral amplifier consisted of two separate amplifiers and the switch control circuit. The positive and negative conductions of the amplifier were controlled by the switching,and the switching of the receiving and transmitting states of the bilateral amplifier was realized. The wideband distributed amplifier was used in bilateral amplifier and the switch control circuit worked with 0 V and- 5 V supply voltages. The test results show that the bilateral amplifier works in 60 m A operation current with + 5 V supply voltage. In the frequency band of 2- 20 GHz,the gain of the bilateral amplifier is greater than 14 d B,the output power of 1d B compression point is greater than 11 d Bm,and the noise factor is lower than 5. 5 d B. The size of the bilateral amplifier chip is 3. 1 mm × 2. 1mm.
引文
[1]陈雪军,林金庭,陈克金.单片行波功率放大器[J].固体电子学研究与发展,1998,18(1):3-8.CHEN X J,LIN J T,CHEN K J.A monolithic traveling wave poweramplifier[J].Research&Progress of SSE,1998,18(1):3-8(in Chinese).
[2]BAHI I,BHARTIA P.微波固态电路设计[M].郑新,赵玉洁,刘永宁,等译.2版.北京:电子工业出版社,2006:372-375.
[3]高建军.场效应晶体管射频微波建模技术[M].北京:电子工业出版社,2007:103-107.
[4]VIRDEE B S,VIRDEE A S,BANYAMIN B Y.Broadband microwave amplifier[M].London:Artech House Inc.,2004:119-175.
[5]BURNS L M.Application for Ga As and silicon integrated circuits in next generation wireless communication systems[J].IEEE Journal of Solid-State Circuits,1995,30(10):1088-1095.
[6]SHIGEMATSU H,SATO M,SUZUKI T,et al.A49 GHz preamplifier with a transimpedance gain of52 d B using In P HEMTs[J].IEEE Journal of SolidState Circuits,2001,36(9):1309-1313.
[7]CHUANG M C,LEI M F,WANG H.A broadband medium power amplifier for millimeter-wave applications[C]∥Proceedings of Asia-Pacific Microwave Conference Proceedings.Suzhou,China,2005:3-4.
[8]蒋幼泉,李拂晓,黄念宁,等.一种超低插损砷化镓射频开关[J].固体电子学研究与进展,2003,23(2):199-201.JINAG Y Q,LI F X,HUANG N N,et al.An ultra low insertion loss Ga As MMIC RF SPDT switch[J].Research&Progress of SSE,2003,23(2):199-201(in Chinese).
[2]BAHI I,BHARTIA P.微波固态电路设计[M].郑新,赵玉洁,刘永宁,等译.2版.北京:电子工业出版社,2006:372-375.
[3]高建军.场效应晶体管射频微波建模技术[M].北京:电子工业出版社,2007:103-107.
[4]VIRDEE B S,VIRDEE A S,BANYAMIN B Y.Broadband microwave amplifier[M].London:Artech House Inc.,2004:119-175.
[5]BURNS L M.Application for Ga As and silicon integrated circuits in next generation wireless communication systems[J].IEEE Journal of Solid-State Circuits,1995,30(10):1088-1095.
[6]SHIGEMATSU H,SATO M,SUZUKI T,et al.A49 GHz preamplifier with a transimpedance gain of52 d B using In P HEMTs[J].IEEE Journal of SolidState Circuits,2001,36(9):1309-1313.
[7]CHUANG M C,LEI M F,WANG H.A broadband medium power amplifier for millimeter-wave applications[C]∥Proceedings of Asia-Pacific Microwave Conference Proceedings.Suzhou,China,2005:3-4.
[8]蒋幼泉,李拂晓,黄念宁,等.一种超低插损砷化镓射频开关[J].固体电子学研究与进展,2003,23(2):199-201.JINAG Y Q,LI F X,HUANG N N,et al.An ultra low insertion loss Ga As MMIC RF SPDT switch[J].Research&Progress of SSE,2003,23(2):199-201(in Chinese).