DC-30 GHz GaAs pHEMT分布式功率放大器设计
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摘要
采用0.25μm GaAs pHEMT工艺研制了一款分布式功率放大器,详细介绍了电路设计和优化过程。通过增加低频交流终端,使得该放大器低频段的增益平坦度有明显的改善。仿真结果表明该放大器带宽约为30 GHz,小信号增益约为8.5 dB,1 dB压缩点输出功率约为21 dBm,功率附加效率最高能达到20%以上。
This paper describes a distributed power amplifier( DA) which was developed using 0. 25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a sig-nificant improvement by employing low frequency termination. The simulation result shows that DA which operates between DC and30 GHz has a gain of 8. 5 dB and 21 dBm of output power at 1 d B gain compression and maximum PAE up to 20 %.
This paper describes a distributed power amplifier( DA) which was developed using 0. 25 μm GaAs pHEMT process. The process of its circuit design and optimization is presented in details. Gain flatness in the low frequency range of this DA has a sig-nificant improvement by employing low frequency termination. The simulation result shows that DA which operates between DC and30 GHz has a gain of 8. 5 dB and 21 dBm of output power at 1 d B gain compression and maximum PAE up to 20 %.
引文
[1]BAHL I J.射频与微波晶体管放大器基础[M].鲍景富,译.北京:电子工业出版社,2013.
[2]ROBERTSON I,LUCYSZYN S.单片射频微波集成电路技术与设计[M].文光俊,谢甫珍,李家胤,译.北京:电子工业出版社,2007:158-166.
[3]焦世龙,陈堂胜,蒋幼泉,等.20 GHz宽带GaAs PHEMT分布式前置放大器[J].电子学报,2007,35(5):955-958.
[4]朱思成,田国平,白元亮,等.DC~20 GHz GaAs PHEMT超宽带低噪声放大器[J].半导体技术,2013,38(8):18-22.
[5]FUJII K.A DC to 22 GHz,2 W high power distributed amplifier using stacked FET topology with gate periphery tapering[C].Radio Frequency Integrated Circuits Symposium.IEEE,2016:270-273.
[6]OLSON S,THOMPSON B,STENGEL B.Distributed amplifier with narrowband amplifier efficiency[C].Microwave Symposium,2007.IEEE/MTT-S International.IEEE,2007:155-158.
[7]NARENDRA K,AIN M F,ANAND L,et al.High efficiency600-mW PHEMT distributed power amplifier employing drain impedance tapering technique[C].International Conference on Microwave and Millimeter Wave Technology.IEEE,2008:1769-1772.
[8]POZAR D M.微波工程[M].张肇仪,周乐柱,吴德明,等,译.北京:电子工业出版社,2006.
[2]ROBERTSON I,LUCYSZYN S.单片射频微波集成电路技术与设计[M].文光俊,谢甫珍,李家胤,译.北京:电子工业出版社,2007:158-166.
[3]焦世龙,陈堂胜,蒋幼泉,等.20 GHz宽带GaAs PHEMT分布式前置放大器[J].电子学报,2007,35(5):955-958.
[4]朱思成,田国平,白元亮,等.DC~20 GHz GaAs PHEMT超宽带低噪声放大器[J].半导体技术,2013,38(8):18-22.
[5]FUJII K.A DC to 22 GHz,2 W high power distributed amplifier using stacked FET topology with gate periphery tapering[C].Radio Frequency Integrated Circuits Symposium.IEEE,2016:270-273.
[6]OLSON S,THOMPSON B,STENGEL B.Distributed amplifier with narrowband amplifier efficiency[C].Microwave Symposium,2007.IEEE/MTT-S International.IEEE,2007:155-158.
[7]NARENDRA K,AIN M F,ANAND L,et al.High efficiency600-mW PHEMT distributed power amplifier employing drain impedance tapering technique[C].International Conference on Microwave and Millimeter Wave Technology.IEEE,2008:1769-1772.
[8]POZAR D M.微波工程[M].张肇仪,周乐柱,吴德明,等,译.北京:电子工业出版社,2006.