一种基于0.18 μm CMOS工艺的分布式放大器设计
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摘要
针对传输线理论在分布式放大器设计的应用中存在的问题进行了讨论,并基于阻抗匹配的思想,采用0.18μm CMOS工艺设计了一种均匀式宽带分布式放大器。设计中采用了峰化电感以提高放大器的增益,并通过优化人工传输线的吸收负载和片上匹配电感提升了分布式放大器的增益、带宽和输出功率。仿真实验结果显示该放大器在2~14 GHz频率范围内增益为11.5 d B,带内增益平坦度为±0.5 d B,输入回波损耗小于-11.7 d B,输出回波损耗小于-8.8 d B,3 d B带宽内输出功率为4~10.5 d Bm,PAE效率为4.1%~18.3%,表现出了良好的综合性能。
The problems existing in the application of transmission line theory in the distributed amplifier( DA) design is discussed,and a uniform broadband DA based on impedance matching is presented by using 0. 18μm complementary metal oxide semiconductor( CMOS) process. The peaking inductor is used to enhance the gain of the amplifier,and the gain,band and output power are further increased by optimizing the absorbing loads of artificial transmission lines and on-chip matching inductors. Simulation results show that the amplifier gives a 11. 5 d B gain from 2 GHz to 14 GHz with an excellent gain flatness of± 0. 5 d B。The input return loss is lower than- 11. 7 d B while the output return loss is lower than- 8. 8 d B. The output powers of the amplifier are high up to 4- 10. 5 d Bm in the 3d B band while the corresponding PAE is 4. 1%- 18. 3%. The design exhibits desired comprehensive performance.
The problems existing in the application of transmission line theory in the distributed amplifier( DA) design is discussed,and a uniform broadband DA based on impedance matching is presented by using 0. 18μm complementary metal oxide semiconductor( CMOS) process. The peaking inductor is used to enhance the gain of the amplifier,and the gain,band and output power are further increased by optimizing the absorbing loads of artificial transmission lines and on-chip matching inductors. Simulation results show that the amplifier gives a 11. 5 d B gain from 2 GHz to 14 GHz with an excellent gain flatness of± 0. 5 d B。The input return loss is lower than- 11. 7 d B while the output return loss is lower than- 8. 8 d B. The output powers of the amplifier are high up to 4- 10. 5 d Bm in the 3d B band while the corresponding PAE is 4. 1%- 18. 3%. The design exhibits desired comprehensive performance.
引文
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[2]YOON S W,LEE I J,MIGUEL U,et al.A Fully-Integrated40-222 GHz InP HBT Distributed Amplifier[J].IEEE Transactions on Wireless Components Letters,2014,24(7):460-462.
[3]ERHAN E,SERGUEI C,PAUL K,et al.A Compact GaNMMIC Non-Uniform Distributed Power Amplifier for 2 to 12GHz[C]∥German Microwave Conference(GeM IC).2014:1-3.
[4]ZHOU Xing,ROY L,AMAYA R E.1 W,Highly Efficient,Ultra-Broadband Non-Uniform Distributed Power Amplifier in GaN[J].IEEE Transactions on Wireless Components Letters,2013,23(4):208-210.
[5]张瑛,王志功,徐建,等.Design of a Low Noise Distributed Amplifier with Adjustable Gain Control in 0.15μm GaA s PHEMT[J].Journal of Semiconductors,2012,33(3):035003-1-035003-4.(in Chinese)
[6]HSIAO C,SU T,SHAWN S H.CMOS Distributed Amplifiers Using Gate-Drain Transformer Feedback Technique[J].IEEE Transactions on Microwave Theory and Techniques,2013,61(8):2901-2910.
[7]KAO J C,CHEN Ping,HUANG Pincheng,et al.A Novel Distributed Amplifier With High Gain,Low Noise,and High Output Power in CMOS Technology[J].IEEE Transactions on Microwave Theory and Techniques,2013,61(4):1533-1542.
[8]CHEN Ping,HUANG Pincheng,KUO J J,et al.A 22-31GHz Distributed Amplifier Based on High-Pass Transmission Lines Using 0.18μm CMOS Technology[J].IEEE Transactions on Wireless Components Letters,2011,21(3):160-162.
[9]徐建,王志功,张瑛,等.High-Efficiency Tapered Distributed Power Amplifier with 2μm GaA s HBT Process[J].Microwave and Optical Technology Letters,2011,53(8):1924-1927.