高热导率氮化硅散热基板材料的研究进展
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摘要
针对越来越明显的大功率电子元器件的散热问题,主要综述了目前氮化硅陶瓷作为散热基板材料的研究进展。对影响氮化硅陶瓷热导率的因素、制备高热导率氮化硅陶瓷的方法、烧结助剂的选择、以及氮化硅陶瓷机械性能和介电性能等方面的最新研究进展作了详细论述,最后总结了高热导率氮化硅作为散热基板材料的发展趋势。
In view of the heat dissipation of high-power electronic devices, the research progress of silicon nitride ceramics as a heat sink material is reviewed. Then the effect of the main factors on the thermal conductivity, the preparation method, the sintering additives during sintering process, and the mechanical and dielectric properties of silicon nitride ceramics are detailedly discussed. Finally, the future prospect of silicon nitride ceramics as heat dissipation substrate material is predicted.
In view of the heat dissipation of high-power electronic devices, the research progress of silicon nitride ceramics as a heat sink material is reviewed. Then the effect of the main factors on the thermal conductivity, the preparation method, the sintering additives during sintering process, and the mechanical and dielectric properties of silicon nitride ceramics are detailedly discussed. Finally, the future prospect of silicon nitride ceramics as heat dissipation substrate material is predicted.
引文
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[35]张洁.宁晓山,吕鑫,等.含稀土助烧剂氮化硅陶瓷的热导率、强度及电学性能[J].稀有金属材料与工程,2008,37(s1):693-696.ZHANG J,NING X S,LV X,et al.Rare Metal Materials and Engineering,2008,37(s1):693-696.
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[37]刘剑,谢志鹏,李志坚.烧结温度对放电等离子烧结氮化硅陶瓷显微结构和力学性能的影响[J].硅酸盐学报.2016,(03):403-407.LIU J,XIE Z P,LI Z J.Journal of the Chinese Ceramic Society,2016,(03):403-407.
[38]徐鹏,杨建,丘泰.高导热氮化硅陶瓷制备的研究进展[J].硅酸盐通报.2010,(02):384-389.XU P,YANG J,QIU T.Bulletin of the Chinese Ceramic Society,2010,(02):384-389.
[39]SUNG R J,LEE S W,NAKAYAMA T,et al.Mechanical and thermal properties of hot-pressed Si3N4 with added Al N[M].2003:439,119-124.
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[41]KITAYAMA M,HIRAO K,TORIYAMA M,et al.Thermal conductivity of beta-Si3N4:I,effects of various microstructural factors[J].Journal of the American Ceramic Society,1999,82(11):3105-3112.
[42]李勇霞.高性能氮化硅的制备及其性能研究[D].哈尔滨工业大学,2013.
[43]白晓杰.反应热压烧结制备Si C/Si3N4复合材料及抗热震性能的研究[D].哈尔滨理工大学,2015.
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[45]XU W,NING X S,ZHOU H P,et al.Study of the Thermal Conductivity of Si3N4 Sintered with Ce O2 and Mg O additives[J].Key Engineering Materials,2003,247(4):355-360.
[46]MIYAZAKI H,YOSHIZAWA Y I,HIRAO K.Effect of crystallization of intergranular glassy phases on the dielectric properties of silicon nitride ceramics[J].Materials Science&Engineering B,2008,148(1-3):257-260.
[2]谭敦强,陈强,刘阳,等.功率型LED散热基板制备研究[J].江西科学,2013,(02):204-209.TAN D Q,CHENG Q,LIU Y,et al.Jiangxi Science,2013,(02):204-209.
[3]陈强,谭敦强,余方新,等.功率型LED散热基板的研究进展[J].材料导报,2009,12(23):61-64.CHENG Q,TAN D Q,YU F X,et al.Materials Review,2009,12(23):61-64.
[4]徐凝华,吴义伯,刘国友,等.混合动力/电动汽车用IGBT功率模块的最新封装技术[J].大功率变流技术,2013,(01):1-6.XU N H,WU Y B,LIU G Y,et al.High Power Converter Technology,2013,(01):1-6.
[5]刘一兵,丁洁.功率型LED封装技术[J].液晶与显示,2008,(04):508-513.LIU Y B,DING J.Chinese Journal of Liquid Crystals and Displays,2008,(04):508-513.
[6]李华平,柴广跃,彭文达,等.大功率LED的封装及其散热基板研究[J].半导体光电,2007,(01):47-50.LI H P,CHAI G Y,PENG W D,et al.Semiconductor Optoelectronics,2007,(01):47-50.
[7]赵赞良,唐政维,蔡雪梅,等.比较几种大功率LED封装基板材料[J].装备制造技术,2006,(04):81-84.ZHAO Z L,TANG Z W,CAI X M,et al.Equipment Manufacturing Technology,2006,(04):81-84.
[8]石功奇,王健,丁培道.陶瓷基片材料的研究现状[J].功能材料,1993,(02):176-180.SHI G Q,WANG J,DING P D.Journal of Functional Materials,1993,(02):176-180.
[9]ZHOU Y,HYUGA H,KUSANO D,et al.Development of high-thermal-conductivity silicon nitride ceramics[J].Journal of Asian Ceramic Societies.2015,3(3):221-229.
[10]徐鹏,杨建,丘泰.高导热氮化硅陶瓷制备的研究进展[J].硅酸盐通报,2010,(02):384-389.XU P,YANG J,QIU T.Bulletin of the Chinese Ceramic Society,2010,(02):384-389.
[11]HAGGERTY J S,LIGHTFOOT A.Opportunities for enhancing the thermal conductivities of Si C and Si3N4 ceramics through improved processing[C]//Proceedings of the 19th Annual Conference on Composites,Advanced Ceramics,Materials,and Structures A:Ceramic Engineering and Science Proceedings,2008,16(4):475-487.
[12]WATARI K,HIRAO K,BRITO M E.Hot isostatic pressing to increase thermal conductivity of Si3N4 ceramics[J].Journal of Materials Research,1999,14(4):1538-1541.
[13]WASANAPIARNPONG T,WADA S,IMAI M,et al.Effect of post-sintering heat-treatment on thermal and mechanical properties of Si3N4 ceramics sintered with different additives[J].Journal of the European Ceramic Society.2006,26(15):3467-3475.
[14]HIRAO K,WATARI K.High thermal conductivity silicon nitride ceramic[J].Journal of the Korean Ceramic Society.2001,49(4):451-455.
[15]加曾利光男,堀口昭宏,角野裕康,等.氮化硅陶瓷电路基片及使用该陶瓷基片的半导体器件[P].CN.1149666 C.1996.
[16]王甜,龙思远,王朋.Si3N4陶瓷高导热性的研究现状及发展趋势[J].功能材料,2015,(08):8009-8012.WANG T,LONG S Y,WANG P.Journal of Functional Materials,2015,(08):8009-8012.
[17]谢志鹏.结构陶瓷[M].北京:清华大学出版社,2011.
[18]HIROSAKI N,OKAMOTO Y,ANDO M,et al.Effect of grain growth on the thermal conductivity of silicon nitride[J].Journal of the Ceramic Society of Japan.1996,104(104):49-53.
[19]KITAYAMA M,HIRAO K,WATARI K,et al.Thermal conductivity ofβ-Si3N4:III,Effect of rare-earth(RE=La,Nd,Gd,Y,Yb,and Sc)oxide additives[J].Journal of the American Ceramic Society.2001,84(2):353-358.
[20]RAO A S.Effect of whisker orientation on the mechanical properties of silicon carbide/alumina composites[J].Interim Report,1992.
[21]OKADA A,HIRAO K.Conduction mechanisms and development of high thermal conductive silicon nitrides[J].Ceramics Japan.2004,39:172-176.
[22]HIRAO K.Development of ceramic substrates with high thermal conductivity(in Japanese)[J].
[23]WATARI K.High thermal conductivity of non-oxide ceramics[J].Journal of the Ceramic Society of Japan.2001,109(1265):S7-S16.
[24]唐甜甜.氮化硅陶瓷的研究[J].吉林省教育学院学报(中旬),2014,(05):153-154.TANG T T.Journal of Educational Institute of Jilin Province,2014,(05):153-154.
[25]邬凤英,庄汉锐,马利泰,等.氮气压力对烧结氮化硅性能和显微结构的影响[J].无机材料学报,1991,(02):160-165.WU F Y,ZHUANG H R,MA L T,et al.Journal of Inorganic Materials,1991,(02):160-165.
[26]张琳.高热导率Al N/Si3N4复合陶瓷材料制备技术及性能研究[D].山东大学,2014.
[27]LEE S W,CHAE H B,PARK D S,et al.Thermal conductivity of unidirectionally oriented Si3N4w/Si3N4 composites[J].Journal of Materials Science,2000,35(18):4487-4493.
[28]刘文彬,熊宁,王铁军,等.氮化硅陶瓷的热等静压处理与抗热震性能研究[J].硅酸盐通报,2015,(01):213-216.LIU W B,XIONG N,WANG T J,et al.Bulletin of the Chinese Ceramic Society,2015,(01):213-216.
[29]杨亮亮,谢志鹏,李双,等.气压烧结氮化硅陶瓷的研究与应用进展[J].陶瓷学报,2014,(05):457-464.YANG L L,XIE Z P,LI S,et al.Journal of Ceramics,2014,(05):457-464.
[30]肖钢,刘曙红.气压烧结-一种大有前途的氮化硅陶瓷制备方法[J].硬质合金,2001,(03):187-192.XIAO G,LIU S H.Cemented Carbide,2001,(03):187-192.
[31]范德蔚.高导热氮化硅陶瓷的制备及性能研究[D].山东理工大学,2012.
[32]SUGANUMA M,KITAGAWA Y,WADA S,et al.Pulsed electric current sintering of silicon nitride[J].Journal of The American Ceramic Society.2003,86(3):387-394.
[33]HERRMANN M,SHEN Z J,SCHULZ I,et al.Silicon nitride nanoceramics densified by dynamic grain sliding[J].Journal of Materials Research.2010,25(12):2354-2361.
[34]彭萌萌,宁晓山.β-氮化硅粉烧结氮化硅陶瓷热导率[J].稀有金属材料与工程,2013,(s1):404-407.PENG M M,NING X S.Rare Metal Materials and Engineering,2013,(s1):404-407.
[35]张洁.宁晓山,吕鑫,等.含稀土助烧剂氮化硅陶瓷的热导率、强度及电学性能[J].稀有金属材料与工程,2008,37(s1):693-696.ZHANG J,NING X S,LV X,et al.Rare Metal Materials and Engineering,2008,37(s1):693-696.
[36]杜大明,魏圣泉,江晓东,等.稀土氧化物对Si3N4陶瓷力学性能和显微组织的影响[J].陶瓷学报,2012,(01):66-68.DU D M,WEI S L,JIANG X D,et al.Journal of Ceramics,2012,(01):66-68.
[37]刘剑,谢志鹏,李志坚.烧结温度对放电等离子烧结氮化硅陶瓷显微结构和力学性能的影响[J].硅酸盐学报.2016,(03):403-407.LIU J,XIE Z P,LI Z J.Journal of the Chinese Ceramic Society,2016,(03):403-407.
[38]徐鹏,杨建,丘泰.高导热氮化硅陶瓷制备的研究进展[J].硅酸盐通报.2010,(02):384-389.XU P,YANG J,QIU T.Bulletin of the Chinese Ceramic Society,2010,(02):384-389.
[39]SUNG R J,LEE S W,NAKAYAMA T,et al.Mechanical and thermal properties of hot-pressed Si3N4 with added Al N[M].2003:439,119-124.
[40]梁振华,彭桂花,李庆余,等.以Mg Si N2作烧结助剂制备高热导β-Si3N4陶瓷[J].硅酸盐学报,2010,(10):1948-1952.LIANG Z H,PENG G H,LI Q Y,et al.Journal of the Chinese Ceramic Society,2010,(10):1948-1952.
[41]KITAYAMA M,HIRAO K,TORIYAMA M,et al.Thermal conductivity of beta-Si3N4:I,effects of various microstructural factors[J].Journal of the American Ceramic Society,1999,82(11):3105-3112.
[42]李勇霞.高性能氮化硅的制备及其性能研究[D].哈尔滨工业大学,2013.
[43]白晓杰.反应热压烧结制备Si C/Si3N4复合材料及抗热震性能的研究[D].哈尔滨理工大学,2015.
[44]WATARI K,SEKI Y,ISHIZAKI K.Thermal properties of HIPsintered silicon nitride[J].Journal of the Ceramic Society of Japan,1989,97(1121):56-62.
[45]XU W,NING X S,ZHOU H P,et al.Study of the Thermal Conductivity of Si3N4 Sintered with Ce O2 and Mg O additives[J].Key Engineering Materials,2003,247(4):355-360.
[46]MIYAZAKI H,YOSHIZAWA Y I,HIRAO K.Effect of crystallization of intergranular glassy phases on the dielectric properties of silicon nitride ceramics[J].Materials Science&Engineering B,2008,148(1-3):257-260.