Si掺杂4,7-二(2-噻吩基)苯并噻二唑-3-辛基噻吩二炔在SnO_2(100)表面吸附的理论研究
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  • 英文篇名:Theory study of silicon doping 3-octylthien-2,5-ylenediethynylene-co-benzo[c]-1',2',5'-thiadiazo-3,6-ylenedi( 2,5-thienylene)adsorption on SnO_2( 100) surface
  • 作者:张福兰
  • 英文作者:ZHANG Fu-Lan;Chongqing Key Laboratory of Inorganic Special Functional Materials,College of Chemistry and Chemical Engineering,Yangtze Normal University;
  • 关键词:4 ; 7-二(2-噻吩基)苯并噻二唑-3-辛基噻吩二炔 ; 掺杂 ; SnO2(100)表面 ; 密度泛函理论
  • 英文关键词:3-octylthien-2,5-ylenediethynylene-co-benzo[c]-1',2',5'-thiadiazo-3,6-ylenedi (2,5-thienylene);;Doping;;SnO2(100) surface;;Density functional theory
  • 中文刊名:YZYF
  • 英文刊名:Journal of Atomic and Molecular Physics
  • 机构:长江师范学院化学化工学院重庆市无机特种功能材料重点实验室;
  • 出版日期:2017-02-28
  • 出版单位:原子与分子物理学报
  • 年:2017
  • 期:v.34
  • 基金:重庆市教委科学技术项目(KJ1601215)
  • 语种:中文;
  • 页:YZYF201701005
  • 页数:8
  • CN:01
  • ISSN:51-1199/O4
  • 分类号:35-42
摘要
采用密度泛函理论与周期性平板模型相结合的方法,在GGA/PW91/DNP水平上研究了4,7-二(2-噻吩基)苯并噻二唑-3-辛基噻吩二炔(简称PTE-DTBT)和Si掺杂4,7-二(2-噻吩基)苯并噻二唑-3-辛基噻吩二炔(简称PTE-DTBT-Si)在SnO_2(100)表面的吸附.通过吸附前后化合物PTE-DTBT和PTE-DTBT-Si的Mulliken charge和前线轨道分析表明:当PTE-DTBT和PTE-DTBT-Si吸附在SnO_2(100)表面时,PTE-DTBT向SnO_2(100)表面转移了0.059 e电荷,SnO_2(100)表面向PTE-DTBTSi转移0.042 e电荷;同时前线轨道能隙变窄.通过吸附前后SnO_2(100)表面的能带和态密度分析表明:在SnO_2(100)表面吸附了化合物PTE-DTBT和PTE-DTBT-Si后,SnO_2中价带和导带间的禁带变窄或消失.且研究表明,PTE-DTBT掺杂一个Si原子后,电池材料光伏性更好.
        The density functional theory and periodic slab model at the GGA / PW91 / DNP level are used to investigate the 3-octylthien-2,5-ylenediethynylene-co-benzo[c]-1',2',5'-thiadiazo-3,6-ylenedi( 2,5-thienylene)( PTE-DTBT for short) and silicon doping 3-octylthien-2,5-ylenediethynylene-co-benzo[c]-1',2',5'-thiadiazo-3,6-ylenedi( 2,5-thienylene)( PTE-DTBT-Si for short) adsorption on SnO_2( 100) Surface. The Mulliken charges and frontier orbitals of the PTE-DTBT and the PTE-DTBT-Si are also discussed. The results reveal that the charge of 0. 059 e transfers from the PTE-DTBT to the SnO_2( 100) surface,on the contrary,the charge of 0. 042 e transfers from the SnO_2( 100) surface to the PTE-DTBT-Si and the energy gap becomes narrow when the adsorption has occurred. The energy band structures and densities of states of the SnO_2( 100)-PTE-DTBT and the SnO_2( 100)-PTE-DTBT-Si are also discussed. The results reveal that the band gap becomes narrow or disappears when the adsorption has occurred. The results indicate that PTE-DTBT-Si has better activity of photovoltaic than PTE-DTBT.
引文
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