花状掺杂W-VO_2/ZnO热致变色纳米复合薄膜研究
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摘要
为解决掺杂引起的二氧化钒薄膜的红外调制幅度下降以及二氧化钒复合薄膜相变温度需要进一步降低等问题,采用纳米结构、掺杂改性和复合结构等多种机理协同作用的方案,利用共溅射氧化法,先在石英玻璃上制备高(002)取向的Zn O薄膜,再在Zn O层上室温共溅射沉积钒钨金属薄膜,最后经热氧化处理获得双层钨掺杂W-VO2/Zn O纳米复合薄膜.利用X射线衍射、X射线光电子能谱、扫描电镜和变温光谱分析等对薄膜的结构、组分、形貌和光学特性进行了分析.结果显示,W-VO2/Zn O纳米复合薄膜呈花状结构,取向性提高,在保持掺杂薄膜相变温度(约39?C)和热滞回线宽度(约6?C)较低的情况下,其相变前后的红外透过率差量增加近2倍,热致变色性能得到协同增强.
Based on the nanocomposite structure and doping modification, we have studied the preparation technology of high performance nanocomposite thin film and its characterization methods. The W-doped VO2/Zn O nanocomposite thin films are prepared successfully on Si O2 substrates by the three-step method. The structure and morphology of the Wdoped VO2/Zn O/Si O2 films are analyzed by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope. Results show that the films are mainly composed of VO2 and high valence cation W6+replacing the V ion in the W-doped VO2/Zn O/Si O2 films. It is found that the flake nanocrystallines resemble a flower in shape, and its size and orientational growth are reduced. The thermochromic properties of W-doped VO2/Zn O films are measured and compared with the single-layer W-doped VO2 films on Si O2 substrates with the same thickness. The variation of infrared transmittance of the W-doped VO2/Zn O/Si O2 nanocomposite film is increased nearly two times, the phase transition temperature reduced approximately to 39?C, and the width of the thermal hysteresis loop is about 6?C. The W-doped VO2/Zn O/Si O2 nanocomposite film has a high infrared modulation ability, a lower phase transition temperature, and a narrower thermal hysteresis loop. Thus the potential application of this nanocomposite film is significantly improved.
Based on the nanocomposite structure and doping modification, we have studied the preparation technology of high performance nanocomposite thin film and its characterization methods. The W-doped VO2/Zn O nanocomposite thin films are prepared successfully on Si O2 substrates by the three-step method. The structure and morphology of the Wdoped VO2/Zn O/Si O2 films are analyzed by X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscope. Results show that the films are mainly composed of VO2 and high valence cation W6+replacing the V ion in the W-doped VO2/Zn O/Si O2 films. It is found that the flake nanocrystallines resemble a flower in shape, and its size and orientational growth are reduced. The thermochromic properties of W-doped VO2/Zn O films are measured and compared with the single-layer W-doped VO2 films on Si O2 substrates with the same thickness. The variation of infrared transmittance of the W-doped VO2/Zn O/Si O2 nanocomposite film is increased nearly two times, the phase transition temperature reduced approximately to 39?C, and the width of the thermal hysteresis loop is about 6?C. The W-doped VO2/Zn O/Si O2 nanocomposite film has a high infrared modulation ability, a lower phase transition temperature, and a narrower thermal hysteresis loop. Thus the potential application of this nanocomposite film is significantly improved.
引文
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[5]Wang X J,Liu Y Y,Li D H,Feng B H,He Z W,Qi Z2013 Chin.Phys.B 22 066803
[6]Joyeeta N,Haglund Jr R F 2008 J.Phys.:Condens.Matter 20 264016
[7]Saeli M,Binions R,Piccirillo C 2009 Appl.Surf.Sci.255 7291
[8]Kyoung J,Seo M,Park H,Koo S,Kim H,Park Y,Kim B J,Ahn K,Park N,Kim H,Kim D S 2010 Opt.Express18 16452
[9]Peng Z F,Wang Y,Du Y Y,Lu D,Sun D Z 2009 J.Alloys Compd.480 537
[10]Li J,Liu C Y,Mao L J 2009 J.Solid State Chem.1822835
[11]Wang Y L,Chen X K,Li M C 2007 Surf.Coat.Technol.201 5344
[12]Zhou S,Li Y,Zhu H Q,Sun R X,Zhang Y M,Zheng Q X,Li L,Shen Y J,Fang B Y 2012 Surf.Coat.Technol.206 2922
[13]Shi J Q,Zhou S X,You B,Wu L M 2007 Sol.Energy Mater.Sol.Cells 91 1856
[14]Zhu H Q,Li Y,Zhou S,Huang Y Z,Tong G X,Sun R X,Zhang Y M,Zheng Q X,Li L,Shen Y J,Fang B Y2011 Acta Phys.Sin.60 098104(in Chinese)[朱慧群,李毅,周晟,黄毅泽,佟国香,孙若曦,张宇明,郑秋心,李榴,沈雨剪,方宝英2011物理学报60 098104]
[15]Kiri P,Warwick M E A,Ridley I,Binions R 2011 Thin Solid Films 520 1363
[16]Yan J Z,Zhang Y,Liu Y S,Zhang Y B,Huang W X,Tu M J 2008 Rare Metal Mater.Eng.37 1648(in Chinese)[颜家振,张月,刘阳思,张玉波,黄婉霞,涂铭旌2008稀有金属材料与工程37 1648]
[17]Wang L X,Li J P,He X L,Gao X G 2006 Acta Phys.Sin.55 2846(in Chinese)[王利霞,李建平,何秀丽,高晓光2006物理学报55 2846]
[18]Xu X,Yin A Y,Du X L 2010 Appl.Surf.Sci.256 2750
[19]Zhu H Q,Li Y,Guo G X,Fang B Y,Wang X H 2013Adv.Mater.-Rapid Commun.7 1015
[20]Case F C 1987 Appl.Opt.26 1550
[21]Yan J Z,Zhang Y,Huang W X,Tu M J 2008 Thin Solid Films 516 8554
[22]He Q,Xu X D,Wen Y J,Jiang Y D,Ao T H,Fan T J,Huang L,Ma C Q,Sun Z Q 2013 Acta Phys.Sin.62 056802(in Chinese)[何琼,许向东,温粤江,蒋亚东,敖天宏,樊泰君,黄龙,马春前,孙自强2013物理学报62056802]
[23]Pauli S A,Herger R,Willmott P R,Donev E U,Suh J Y,Haglund Jr R F 2007 J.Appl.Phys.102 073527
[24]Lopez R,Feldman L C 2004 Phys.Rev.Lett.93 177403