X波段400 W GaN内匹配功率管
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摘要
报道了X波段脉冲输出功率超过400 W的GaN HEMT内匹配功率管。该器件内部包含了4只14.4mm栅宽GaN HEMT管芯。输入输出同时采用了一级L-C阻抗变换和两级微带阻抗变换器。该器件在9.0~10.0GHz频带内,在漏极电压为50V、脉冲宽度100μs、占空比10%测试条件下,输出功率达到了400 W以上,功率增益大于9dB,附加效率高于37.7%,带内峰值输出功率450 W。
An X-band pulse-mode GaN HEMT power transistor with over 400 Woutput power was reported.Four GaN HMET dies of 14.4 mm gate width were included inside the transistor.One-stage L-C impedance transformer and two-stages micro-strip line impedance transformer were employed for input and output matching networks simultaneously.Under the drain voltage of 50 Vand the pulse condition(100μs pulse width,10% ratio),during the operation frequency band of 9.0 GHz to 10.0 GHz,the output power is higher than 400 W,the power gain is more than 9 dB,the PAEis higher than 37.7%,and within the whole band,the highest output power is about 450 W.
An X-band pulse-mode GaN HEMT power transistor with over 400 Woutput power was reported.Four GaN HMET dies of 14.4 mm gate width were included inside the transistor.One-stage L-C impedance transformer and two-stages micro-strip line impedance transformer were employed for input and output matching networks simultaneously.Under the drain voltage of 50 Vand the pulse condition(100μs pulse width,10% ratio),during the operation frequency band of 9.0 GHz to 10.0 GHz,the output power is higher than 400 W,the power gain is more than 9 dB,the PAEis higher than 37.7%,and within the whole band,the highest output power is about 450 W.
引文
[1]Tao Hongqi,Hong Wei,Zhang Bin,et al.A compact60W X-band GaN HEMT power amplifier MMIC[J].Microwaveand Wireless Components Letters,IEEE,2016,27(1):73-75.
[2]Takuma Torii,Shohei Imai,Hiroaki Maehara,et al.60%PAE,30 W X-band and 33%PAE,100 W Kuband PAs utilizing 0.15μm GaN HEMT technology[C].EuMC 46th,London,2016:202-204.
[3]Nishihara M,Yamamoto T,Mizuno S,et al.X-band200W AlGaN/GaN HEMT for high power application[C].Proc Eur Microw Integr Circuits Conf,Madrid,Spain,2011:65-68.
[4]Noto H,Maehara H,Uchida H,et al.X-and Kuband internally matched GaN amplifiers with more than 100 Woutput power[C].Proc Eur Microw Integr Circuits Conf Paris,France,2012:695-698.
[5]Kikuchi K,Nishihara M,Yamamoto H,et al.An 8.5~10.0GHz 310 W GaN HEMT for Radar Appli-cations[C].IEEE MTT-S Int Microwave Symp LA,USA,2014:1-4.
[6]Tang Shijun,Gu Liming,Wang Qi,et al.A 700 Wpush-pull AlGaN/GaN power amplifier for P-band aerospace application[C].ICEAA 2016,Cairns,2016:453-455.
[7]Yamaki F,Inoue K,Nishi M,et al.Ruggedness and reliability of GaN HEMT[C].Proc Eur Microw Integr Circuits Conf,Madrid,Spain,2011:328-331.
[8]Kuwata E,Yamanaka K,Horikoshi T,et al.Design of broadband amplifier with consideration of output capacitance[C].IEICE Technical Report,Tokyo,2008:200.
[9]Fano R M.Theoretical limitations on the broadband matching of arbitrary impedance[J].J of Franklin Inst,1950,249:57-84,139-154.
[10]Matthaei G L.Tables of Chebyshev impedancetransforming networks of low-pass filter form[C].Proceedings of IEEE,USA,1964:939-963.
[2]Takuma Torii,Shohei Imai,Hiroaki Maehara,et al.60%PAE,30 W X-band and 33%PAE,100 W Kuband PAs utilizing 0.15μm GaN HEMT technology[C].EuMC 46th,London,2016:202-204.
[3]Nishihara M,Yamamoto T,Mizuno S,et al.X-band200W AlGaN/GaN HEMT for high power application[C].Proc Eur Microw Integr Circuits Conf,Madrid,Spain,2011:65-68.
[4]Noto H,Maehara H,Uchida H,et al.X-and Kuband internally matched GaN amplifiers with more than 100 Woutput power[C].Proc Eur Microw Integr Circuits Conf Paris,France,2012:695-698.
[5]Kikuchi K,Nishihara M,Yamamoto H,et al.An 8.5~10.0GHz 310 W GaN HEMT for Radar Appli-cations[C].IEEE MTT-S Int Microwave Symp LA,USA,2014:1-4.
[6]Tang Shijun,Gu Liming,Wang Qi,et al.A 700 Wpush-pull AlGaN/GaN power amplifier for P-band aerospace application[C].ICEAA 2016,Cairns,2016:453-455.
[7]Yamaki F,Inoue K,Nishi M,et al.Ruggedness and reliability of GaN HEMT[C].Proc Eur Microw Integr Circuits Conf,Madrid,Spain,2011:328-331.
[8]Kuwata E,Yamanaka K,Horikoshi T,et al.Design of broadband amplifier with consideration of output capacitance[C].IEICE Technical Report,Tokyo,2008:200.
[9]Fano R M.Theoretical limitations on the broadband matching of arbitrary impedance[J].J of Franklin Inst,1950,249:57-84,139-154.
[10]Matthaei G L.Tables of Chebyshev impedancetransforming networks of low-pass filter form[C].Proceedings of IEEE,USA,1964:939-963.