衬底温度调制生长GZO薄膜的性能研究
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摘要
利用射频磁控溅射法在石英玻璃衬底上制备ZnO∶Ga透明导电氧化物薄膜,主要研究了一种类调制掺杂工艺对GZO薄膜的薄膜形貌结构和光电性能的影响。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)、紫外-可见-近红外分光光度计(UV-VIS-NIR)和四探针测试仪对GZO薄膜进行表征。结果表明:不同的衬底温度调制下生长的GZO薄膜都具有明显的c轴择优取向,对于衬底温度调制条件下,在150℃/RT条件下的薄膜结晶最好,且在可见近红外波段(480~1600 nm)平均透过率达到85.4%左右,薄膜最低方阻达到60Ω/□。
Transparent conductive GZO oxide films were prepared on quartz glass substrate using radio-frequency(RF)magnetron sputtering. The effect of a kind of new doping process on morphology structure and photoelectric properties of GZO films were investigated. The GZO thin films were characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), ultraviolet-visible-near infrared spectrophotometer(UV-VIS-NIR) and four point probe resistance tester. The results shows that all the GZO films prepared with different substrate temperatures have obvious C axis preferred grain orientation. Among the different substrate temperatures, the film crystallization is the best under the condition of 150 ℃ / RT, and the average transmittance of the film in visible and near infrared region(480 nm to 1600 nm) is about 85.4%, minimum sheet resistance reached 60 Ω/ □.
Transparent conductive GZO oxide films were prepared on quartz glass substrate using radio-frequency(RF)magnetron sputtering. The effect of a kind of new doping process on morphology structure and photoelectric properties of GZO films were investigated. The GZO thin films were characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), ultraviolet-visible-near infrared spectrophotometer(UV-VIS-NIR) and four point probe resistance tester. The results shows that all the GZO films prepared with different substrate temperatures have obvious C axis preferred grain orientation. Among the different substrate temperatures, the film crystallization is the best under the condition of 150 ℃ / RT, and the average transmittance of the film in visible and near infrared region(480 nm to 1600 nm) is about 85.4%, minimum sheet resistance reached 60 Ω/ □.
引文
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[2]Chen Shuqun,Michael E.A.Warwick,et al.Effects of film thickness and thermal treatment on the structural and opto electronic properties of Ga doped ZnO films deposited by sol gel method[J].Solar Energy Materials&Solar Cells,2015,137:202 209.
[3]Tian Congsheng,Chen Xinliang,Liu Jieming,et al.Wide spectrum Mg and Ga co doped ZnO TCO thin films with introduced hydrogen grown by magnetron sputtering at room temperature[J].Applied Surface Science,2014,314:786793.
[4]T.Terasako,Y.Ogura,S.Fujimoto,et al.Carrier transport and photoluminescence properties of Ga doped ZnO films grown by ion plating and by atmospheric pressure CVD[J].Thin Solid Films,2013,549:12 17.
[5]Aniruddh Bahadur Yadav,Kunal Singh,Amritanshu Pandey,et al.Annealing temperature effects on the properties of ZnO thin films and Pd/ZnO Schottky contacts grown on n Si(100)substrates by vacuum depositon method[J].Superlattices and Microstructures,2014,71:250 260.
[6]N.Sadananda kumar,Kasturi V.Bangera,C.Anandan,et al.Properties of ZnO:Bi thin films prepared by spray pyrolysis technique[J].Journal of Alloys and Compounds,2013,578:613 619.
[7]JunSik Cho,YoungJin Kim,Jeong Chul Lee,et al.Structural and optical properties of textured ZnO:Al films on glass substrates prepared by in line rf magnetron sputtering[J].Solar Energy Materials&Solar Cells,2011,95:190 194.
[8]Sung Ju Tark,Min Gu Kang,Sungeun Park,et al.Development of surface textured hydrogenated ZnO:Al thin films forμc Si solar cells[J].Current Applied Physics,2009,9:1318 1322.
[9]Wang Z A,Chu J B,Zhu H B,et al.Growth of ZnO:Al films by RF sputtering at room temperature for solar cell applications Original Research Article Solid State Electronics[J].2009,53(11):1149 1153.
[10]兰椿,龙路,钟志有,等.沉积温度对GZO透明导电薄膜结构和性能的影响[J].电子元件与材料,2014,33(8):30 33.
[11]王书昶,张春伟,刘振华,等.衬底温度对PLD法制备的ZnO:Ga薄膜结构和性能的影响[J].电子元件与材料,2011,30(5):23 25.
[12]MANOJ P K,GOPCHANDRAN K G,KOSHY P,et al.Growth and characterization of indium oxide thin films prepared by spray pyrolysis[J].Opt Mater,2006,28(12):1405 1411.
[13]孙奉娄,惠述伟.衬底温度对射频溅射沉积ZAO透明导电薄膜性能的影响[J].中南民族大学学报:自然科学版,2009,28(2):10 13.
[14]顾锦华,钟志有,何翔,等.真空退火处理对光敏薄膜及聚合物太阳电池性能的影响[J].中南民族大学学报:自然科学版,2009,28(3):30 33.
[15]周科.Ga掺杂ZnO透明导电薄膜的制备与光电性能研究[D].重庆大学,2010.
[16]王小伟.GZO薄膜的制备及其光电性能研究[D].华中科技大学,2011.