Al-Sn共掺杂浓度对ZnO薄膜的结构和光电性能的影响
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摘要
在石英玻璃衬底上,通过溶胶-凝胶旋涂法制备Al-Sn共掺ZnO薄膜(ASZO)。研究表明,所有ASZO薄膜样品都沿c轴择优取向生长;适当的Al-Sn共掺浓度,可以促进ZnO薄膜结晶,提升薄膜的载流子迁移率,同时还可以观察到ASZO薄膜表面生长出六角柱状结构晶粒。随着Al-Sn元素掺杂浓度的改变,所获薄膜的最高平均光学透过率达到95%以上。由于Al-Sn元素间固溶比不同,适当的掺杂浓度可以提升Al-Sn元素的掺杂效率,提升薄膜内部的载流子浓度,降低薄膜电阻率,得到ASZO薄膜最低电阻率5.7×10~(-2)Ω·cm。
Al-Sn co-doped ZnO thin films(ASZO) were prepared on the quartz glass substrate by sol-gel spincoating method. It is shown that all ASZO thin films sample grown along the c-axis; Appropriate Al-Sn co-doped concentration can improve the ZnO films crystallization, increasing the carrier mobility; meanwhile, it can be observed six columnar grain structure crystal particles on the ASZO films surface. With the Al-Sn co-doped concentration changed, the highest mean optical transmittance is above 95%. Because of the influence of the solid solution ratio, the appropriate concentration can improve the efficiency of doping Al-Sn element, which enhances the carrier concentration of the film inside and the resistivity decreases; the lowest resistivity of ASZO thin films is 5.7×10~(-2) Ω·cm.
Al-Sn co-doped ZnO thin films(ASZO) were prepared on the quartz glass substrate by sol-gel spincoating method. It is shown that all ASZO thin films sample grown along the c-axis; Appropriate Al-Sn co-doped concentration can improve the ZnO films crystallization, increasing the carrier mobility; meanwhile, it can be observed six columnar grain structure crystal particles on the ASZO films surface. With the Al-Sn co-doped concentration changed, the highest mean optical transmittance is above 95%. Because of the influence of the solid solution ratio, the appropriate concentration can improve the efficiency of doping Al-Sn element, which enhances the carrier concentration of the film inside and the resistivity decreases; the lowest resistivity of ASZO thin films is 5.7×10~(-2) Ω·cm.
引文
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[2]Giannouli M,Spiliopoulou F.Effects of the morphology of nanostructured ZnO films on the efficiency of dyesensitized solar cells[J].Renewable Energy,2012,41:115-122.
[3]Javed HMA,Que W,Yin X,et al.ZnO/TiO2 nanohexagon arrays heterojunction photoanode for enhancing power conversion efficiency in dye-sensitized solar cells[J].J.Alloys Compd,2016,685:610-618.
[4]Yamamoto N,Makino H,Osone S,et al.Development of Ga-doped ZnO transparent electrodes for liquid crystal display panels[J].Thin Solid Films,2012,520(12):4131-4138.
[5]Hsu CL,Chang SJ.Doped ZnO 1D nanostructures:synthesis,properties,and photodetector application[J].Small,2014,10(22):4562-4585.
[6]zgu?r U,Alivov YI,Liu C,et al.A comprehensive review of ZnO materials and devices[J].J.Appl.Phys,2005,98(4):041301.
[7]Li B j,Huang L j,Ren N f,et al.Superhydrophobic and anti-reflective ZnO nanorod-coated FTO transparent conductive thin films prepared by a three-step method[J].J.Alloys Compd,2016,674:368-375.
[8]Abdullah H,Norazia MN,Shaari S,et al.Influence of post-annealing temperature on the properties exhibited by nanostructured In doped ZnO thin films[J].Thin Solid Films,2010,518(24):e174-e802.
[9]Adhyapak PV,Meshram SP,Pawar AA,et al.Synthesis of burger/donut like V and W doped ZnO and study of their optical and gas sensing properties[J].Ceram.Int,2014,40(8):12105-12115.
[10]Hu Y,Chen Y,Zhang X,et al.EFFECTS OF SUBSTRATETEMPERATURE ON THE DOPING CHARACTERISTICSOF Li-W CO-DOPED ZnO FILMS[J].Surf.Rev.Lett,2014,21(01):1450003.
[11]Lin J C,Peng K C,Peng I G,et al.Corrosion behavior of Al,Sc-co-doped ZnO thin films in 3.5%NaCl solution[J].Thin Solid Films,2009,517(17):4777.
[12]Ngom BD,Mpahane T,Manyala N,et al.Structural and optical properties of nano-structured tungsten-doped ZnOthin films grown by pulsed laser deposition[J].Appl.Surf.Sci,2009,255(7):4153-4158.
[13]Shi Q,Zhou K,Dai M,et al.Growth of high-quality Ga-F codoped ZnO thin films by mid-frequency sputtering[J].Ceram.Int,2014,40(1):211-216.
[14]Swapna R,Santhosh Kumar MC.Deposition of the low resistive Ag-N dual acceptor doped p-type ZnO thin films[J].Ceram.Int,2013,39(2):1799-1806.
[15]Yu M,Qiu H,Chen X,et al.Structural and physical properties of Ni and Al co-doped ZnO films grown on glass by direct current magnetron co-sputtering[J].Physica B:Condensed Matter,2009,404(12-13):1829-1834.
[16]Liu H,Zhou P,Zhang L,et al.Effects of oxygen partial pressure on the structural and optical properties of undoped and Cu-doped ZnO thin films prepared by magnetron co-sputtering[J].Mater.Lett,2016,164:509-512.
[17]Jayaraman VK,Kuwabara YM,lvarez AM,Amador Mdll O.Importance of substrate rotation speed on the growth of homogeneous ZnO thin films by reactive sputtering[J].Mater.Lett,2016,169:1-4.
[18]帅伟强,胡跃辉,张效华,等.调制溅射气压对ZnO∶Ga薄膜结构与光电性能的影响[J].中国陶瓷,2016,52(10):22-25.
[19]余稀,胡跃辉,但涛.Mg-Co共掺杂对ZnO-TCO薄膜光学特性及微观结构的影响[J].中国陶瓷,2017,53(8):31-35.
[20]Addonizio ML,Aronne A,Daliento S,Tari O,Fanelli E,Pernice P.Sol-gel synthesis of ZnO transparent conductive films:The role of pH[J].Appl.Surf.Sci,2014,305:194-202.
[21]Barrera D,Lee Y J,Hsu JWP.Influence of ZnO sol-gel electron transport layer processing on BHJ active layer morphology and OPV performance[J].Sol.Energy Mater.Sol.Cells,2014,125:27-32.
[22]Caglar Y,Caglar M,Ilican S.Microstructural,optical and electrical studies on sol gel derived ZnO and ZnO:Al films[J].Current Applied Physics,2012,12(3):963-968.
[23]Wang LN,Hu LZ,Zhang HQ,et al.Studying the Raman spectra of Ag doped ZnO films grown by PLD[J].Mater.Sci.Semicond.Process,2011,14(3-4):274-277.
[24]Sata N,Shibata Y,Iguchi F,et al.Crystallization process of perovskite type oxide thin films deposited by PLD without substrate heating:Influence of sputtering rate and densification-driven high tensile strain[J].Solid State Ionics,2015,275:14-18.
[25]Kuprenaite S,Murauskas T,Abrutis A,et al.Properties of In-,Ga-,and Al-doped ZnO films grown by aerosol-assisted MOCVD:Influence of deposition temperature,doping level and annealing[J].Surf.Coat.Technol,2015,271:156-164.
[26]Ekthammathat N,Thongtem S,Thongtem T,et al.Characterization and antibacterial activity of nanostructured ZnO thin films synthesized through a hydrothermal method[J].Powder Technol,2014,254:199-205.
[27]Gu YZ,Lu HL,Zhang Y,et al.Effects of ZnO seed layer annealing temperature on the properties of n-ZnO NWs/Al2O3/p-Si heterojunction[J].Opt.Express,2015,23(19):24456-24463.
[28]Tabib A,Sdiri N,Elhouichet H,et al.Investigations on electrical conductivity and dielectric properties of Na doped ZnO synthesized from sol gel method[J].J.Alloys Compd,2015,622:687-694.