Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation
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  • 英文篇名:Work Function Enhancement of Indium Tin Oxide via Oxygen Plasma Immersion Ion Implantation
  • 作者:高欢忠 ; 何龙 ; 何志江 ; 李泽斌 ; 吴忠航 ; 成卫海 ; 艾畦 ; 范晓轩 ; 区琼荣 ; 梁荣庆
  • 英文作者:GAO Huanzhong , HE Long , HE Zhijiang , LI Zebin , WU Zhonghang , CHENG Weihai , AI Qi , FAN Xiaoxuan , OU Qiongrong , LIANG Rongqing Department of Illuminating Engineering and Light Sources, Institute for Electric Light Sources, Fudan University, Shanghai 200433, China
  • 英文关键词:plasma immersion ion implantation, surface treatment, work function, indium tin oxide
  • 中文刊名:DNZK
  • 英文刊名:等离子体科学和技术(英文版)
  • 机构:Department of Illuminating Engineering and Light Sources,Institute for Electric Light Sources,Fudan University;
  • 出版日期:2013-08-15
  • 出版单位:Plasma Science and Technology
  • 年:2013
  • 期:v.15
  • 基金:supported by National Natural Science Foundation of China(Nos.11005021,51177017 and 11175049)
  • 语种:英文;
  • 页:DNZK201308016
  • 页数:3
  • CN:08
  • ISSN:34-1187/TL
  • 分类号:75-77
摘要
Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
        Indium tin oxide (ITO) transparent conducting film was treated with oxygen plasma immersion ion implantation (PIII). X-ray photoelectron spectroscopy (XPS) was employed to characterize the effect. The results suggested that the oxygen content in the surface was increased and maintained for more than 50 h compared with traditional plasma-treated samples. Meanwhile, the work function of ITO estimated by comparing the peak shift in the XPS diagram suggested a corresponding increase by more than 1 eV.
引文
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