Influence of Iodine Vapour Pressure on Formation of XeI in Xe/I_2 Mixture

详细信息    查看全文 | 推荐本文 |

英文篇名：Influence of Iodine Vapour Pressure on Formation of XeI in Xe/I_2 Mixture 作者：区琼荣 ; 孟月东 ; 舒兴胜 ; 钟少锋 ; 尤庆亮 英文作者：OU Qiongrong, MENG Yuedong, SHU Xingsheng ZHONG Shaofeng, YOU Qingliang Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China 英文关键词：XeI~* excimer, UV emission, dielectric barrier discharge, plasma 中文刊名：DNZK 英文刊名：等离子体科学和技术(英文版) 机构：Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031 China; 出版日期：2006-05-15 出版单位：Plasma Science and Technology 年：2006 期：v.8 语种：英文; 页：DNZK200603019 页数：4 CN：03 ISSN：34-1187/TL 分类号：85-88

摘要

<正> The influence of the iodine vapour pressure on the mechanisms of XeI* formation is investigated in Xe/I_2 mixture by dielectric barrier discharge. The iodine vapour pressure is measured as a function of the ultraviolet (UV) intensity of XeI* emission at 253 nm, and found that the UV intensity reaches a maximum at 0.9 Torr of iodine at a xenon pressure of 300 Torr, then decreases slowly with the iodine pressure larger than 0.9 Torr. The discharge mode transforms from a hybrid discharge at a xenon pressure of 760 Torr with 1.0 Torr of iodine to a diffuse mode at 10 Torr of iodine. These results are quite different from those of other rare-gas halogen excimers and indicate a different mechanism of XeI* formation from those of other rare-gas halogen excimers.
        The influence of the iodine vapour pressure on the mechanisms of XeI* formation is investigated in Xe/I_2 mixture by dielectric barrier discharge. The iodine vapour pressure is measured as a function of the ultraviolet (UV) intensity of XeI* emission at 253 nm, and found that the UV intensity reaches a maximum at 0.9 Torr of iodine at a xenon pressure of 300 Torr, then decreases slowly with the iodine pressure larger than 0.9 Torr. The discharge mode transforms from a hybrid discharge at a xenon pressure of 760 Torr with 1.0 Torr of iodine to a diffuse mode at 10 Torr of iodine. These results are quite different from those of other rare-gas halogen excimers and indicate a different mechanism of XeI* formation from those of other rare-gas halogen excimers.

引文

1 Gellert B, Kogelschatz U. Appl. Phys., 1991, B52: 14
    2 Kogelschatz U, Eliasson B, Egli W. Pure Appl. Chem., 1999, 71: 1819
    3 Jeffrey Hay P, Thom H Duning, Jr. J. Chem. Phys., 1978, 69:2209
    4 Cocon J A, Velazco J E, Setser D W. J. Chem. Phys., 1978, 68, 5187
    5 Tellinghuisen Joel, Hoffman J M, Tisone G C, et al. J. Chem. Phys., 1976, 64:2484
    6 Falkenstei Zoran, Coogan John J. J. Phys. D: Appl. Plays., 1997, 30:2704
    7 Adler F, Muller S. J. Phys. D: Appl. Phys., 2000, 33: 1705
    8 Xu Dong. [Ph. D. Thesis]. A Kinetic Model for Excimer UV and VUV Radiation in Dielectric Barrier Discharge. Urbana: Department of Electrical and Computer Engineering, University of Illinois, IL 61801, October, 1998
    9 Xu J Z, Liang R Q, Ren Z X. Plasma Sci. and Technol., 2001, 3: 933
    10 Xu J Z Liang R Q, Ren Z X. Plasma Sci. and Technol., 2001, 3:1027
    11 Xu J Z, Liang R Q , Ren Z X. Plasma Sci. and Technol., 2002, 4:1411
    12 Tellinghuisen Joel. Chem. Plays. Lett., 1977, 49:485
    13 Casassa M P, Golde M F, Kvaran A. Chem. Phys. Lett., 1978, 59:51
    14 Tamagake K, Seter D W, Kolts J H. J. Chem. Phys., 1981, 74:4286
    15 Zhang J Y, Boyd I W. J. Appl. Phys., 1998, 84:1174
    16 Ou Qiongrong, Meng Yuedong, Xu Xu, et al. Chin. Phys. Lett., 2004, 21, 1317
    17 Eliasson B, Kogelschatz U. Appl. Phys., 1988, B46: 299
    18 Kogelschatz U. Applied Surface Science, 1992, 54:410
    19 Eliasson B, Gellert B. J. Appl. Phys., 1990, 68:2026