4H-SiC无线无源高温压力传感器设计
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摘要
高温压力传感器研制的主要目的是解决高温恶劣环境下的压力测量问题,SiC是制造高温压力传感器的理想材料,结合薄膜技术与陶瓷厚膜技术,提出了一种新型的4H-SiC无线无源电容式高温压力传感器设计方案。应用Ansys有限元分析软件进行仿真,600℃时灵敏度为2.65 MHz/bar,说明传感器在高温下具有较高的灵敏度,对制备过程中的关键工艺——SiC深刻蚀进行了验证,刻蚀深度达到124μm,满足传感器制备要求。
The main purpose of the development of high- temperature pressure sensor is to solve the pressure measurement problems in high- temperature harsh environments, SiC is an ideal material for manufacturing high temperature pressure sensor. Combined the technology of thin film and ceramic thick- film technology, a new design of 4H- SiC capacitive wireless passive high temperature pressure sensor is introduced in this paper. The Ansys finite element analysis software is utilized to simulate, the sensitivity of the capacitance chip is 2. 65 MHz / bar at 600 ℃, which proves that the sensor has relatively high sensitivity under high temperature. The key process of preparation — SiC deep etch is verified, etching depth reaches 124 um, meets the requirements of sensor preparation.
The main purpose of the development of high- temperature pressure sensor is to solve the pressure measurement problems in high- temperature harsh environments, SiC is an ideal material for manufacturing high temperature pressure sensor. Combined the technology of thin film and ceramic thick- film technology, a new design of 4H- SiC capacitive wireless passive high temperature pressure sensor is introduced in this paper. The Ansys finite element analysis software is utilized to simulate, the sensitivity of the capacitance chip is 2. 65 MHz / bar at 600 ℃, which proves that the sensor has relatively high sensitivity under high temperature. The key process of preparation — SiC deep etch is verified, etching depth reaches 124 um, meets the requirements of sensor preparation.
引文
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[2]耿淑琴,郭跃,吴武臣.无源电感耦合式RFID读写器天线的优化设计[J].电子器件,2008,31(2):564-567.
[3]程伟.Si C电容式压力传感器敏感元件的工艺研究[D].厦门:厦门大学,2013.
[4]FONSECA M A.Polymer/ceramic wireless MEMS pressure sensors for harsh environments:High temperature and biomedical applications[D].Atlanta:Georgia Institute of Technology,2007.
[5]严宗达,王洪礼.热应力[M].北京:高等教育出版社,1993.
[6]蔡永恩.热弹性问题的有限元方法及程序设计[M].北京:北京大学出版社,1997.
[7]康昊,谭秋林,秦丽.基于LTCC的无线无源压力传感器的研究[J].传感技术学报,2013,26(4):498-499.
[8]李莹.LTCC高温压力传感器的设计制作和测试[J].传感器与微系统,2013,32(4):101-102.
[9]陈骁.玻璃浆料在MEMS圆片级气密封装中的应用研究[D].南京:南京理工大学,2009.
[10]严子林.碳化硅高温压力传感器设计与工艺实验研究[D].北京:清华大学,2011.
[11]MUNRO R G.Material properties of sinteredα-Si C[J].Phys.Chem.Ref.Dat.1997,26(5):1195-1203.
[12]吴清仁,文璧璇.Si C材料导热系数和热膨胀系数与温度关系[J].华南理工大学学报(自然科学版),1996,3(24):11-16.
[13]潘宏菽,霍玉柱.控制Si C基体刻蚀的台阶形貌的方法[P].中国:CN 101556919A,2009.
[14]陈刚,李哲洋,陈征,等.4H-Si C MESFET工艺中的金属掩膜研究[C].广州:第十五届全国化合物半导体材料、微波器件和光电器件学术会议,2008.