宽带混频器的优化设计
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摘要
采用0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺设计并实现了一款单片宽带混频器。该混频器采用双平衡混频器结构,以串联的两个漏源相连的PHEMT作为环形二极管电桥中的二极管以提升混频器线性度。本振巴伦和射频巴伦均采用螺旋线式Marchand巴伦,为降低巴伦的幅度及相位不平衡度,采用遗传算法对巴伦的几何参数进行了优化设计。该混频器电路采用0.25μm GaAs PHEMT工艺实现,芯片面积为1.5 mm×1.1 mm。测试结果表明,当本振功率为20 dBm时,变频损耗小于7 dB,输入三阶交调点IIP_3大于22 dBm。本振端口到射频端口和中频端口的隔离度均大于30 dB。
A monolithic wideband mixer was designed and implemented using a 0. 25 μm GaAs pseudomorphic high electron mobility transistor( PHEMT) process. The mixer adopted the double balanced mixer structure,using two PHEMTs connected in series with the source and drain as the diode in the ring diode bridge to improve the linearity of the mixter. The spiral MarchandBalun was used as LO Balun and RF Balun. To minimize the amplitude and the phase imbalance of the Balun,the geometric parameters of the Balun in the mixer were optimized by using the genetic algorithm. The mixer circuit was fabricated in a 0. 25 μm GaAs PHEMT process with a chip area of 1. 5 mm×1. 1 mm. The measurement results show that when the LO power is 20 dBm,the mixer achieves a conversion loss of less than 7 dB with an IIP_3 of higher than 22 dBm. Meanwhile,the LO-RF isolation and LO-IF isolation are higher than 30 dB.
A monolithic wideband mixer was designed and implemented using a 0. 25 μm GaAs pseudomorphic high electron mobility transistor( PHEMT) process. The mixer adopted the double balanced mixer structure,using two PHEMTs connected in series with the source and drain as the diode in the ring diode bridge to improve the linearity of the mixter. The spiral MarchandBalun was used as LO Balun and RF Balun. To minimize the amplitude and the phase imbalance of the Balun,the geometric parameters of the Balun in the mixer were optimized by using the genetic algorithm. The mixer circuit was fabricated in a 0. 25 μm GaAs PHEMT process with a chip area of 1. 5 mm×1. 1 mm. The measurement results show that when the LO power is 20 dBm,the mixer achieves a conversion loss of less than 7 dB with an IIP_3 of higher than 22 dBm. Meanwhile,the LO-RF isolation and LO-IF isolation are higher than 30 dB.
引文
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[2]高永振,唐宗熙.基于新型超宽带平面巴伦的双平衡混频器[J].固体电子学研究与进展,2013,33(6):547-550.GAO Y Z,TANG Z X.Anovel double balanced mixer using planar UWB balun[J].Research&Progress of SSE,2013,33(6):547-550(in Chinese).
[3]孙晓玮,程知群,夏冠群.Ga As MMIC MESFET混频器性能比较[J].固体电子学研究与进展,2000,20(1):110-115.SUN X W,CHENG Z Q,XIA G Q.Performance comparison for Ga As MMIC mixers[J].Research&Progress of SSE,2000,20(1):110-115(in Chinese).
[4]赵宇,吴洪江,高学邦,等.Ga As MMIC宽带双平衡混频器的研制[J].半导体技术,2009,34(12):1220-1223.ZHAO Y,WU H J,GAO X B,et al.Design of the Ga As MMIC broadband double balanced mixer[J].Semiconductor Technology,2009,34(12):1220-1223(in Chinese).
[5]魏萍,徐军,董宇亮,等.微波宽带双双平衡混频器的设计[C]∥全国微波毫米波会议.宁波,中国,2007:949-952.
[6]KIAN S A,ROBERTSON I D.Analysis and design of impedance-transforming planar Marchand baluns[J].IEEE Transactions on Microwave Theoryand Techniques,2001,49(2):402-406.
[7]KANAZAWA K,KAZUMURA M,NAMBU S,et al.A Ga As double-balanced dual-gate FET mixer IC for UHF receiver front-end applications[J].IEEE Transactions on Microwave Theoryand Techniques,1985,33(12):1548-1554.
[8]DINARI M,SERRU V,CAMIADE M,et al.Wideband high linearity and high isolation mixer MMIC developed on Ga As 0.25μm power PHEMT Technology[C]∥Proceedings of the 39thEuropean Microwave Conference.Rome,Italy,2009:1661-1664.
[9]王小平.遗传算法理论、应用与软件实现[M].西安:西安交通大学出版社,2002:73-74.
[10]玄光男,程润伟.遗传算法与工程优化[M].北京:清华大学出版社,2004:106-107.