带有固定延迟时间的IGBT去饱和过流检测电路
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摘要
提出了一款带有固定延迟时间的绝缘栅双极型晶体管(IGBT)去饱和(DESAT)过流检测电路。在IGBT去饱和过流检测电路中加入固定延时电路,当检测到过流信号后关断IGBT,防止IGBT被烧毁。同时固定延时电路开始计时,经历了固定延迟时间后,电路错误信号清除,IGBT恢复正常工作状态,提高了IGBT功率回路的可靠性与安全性。将固定延时电路集成在IGBT驱动芯片中,提高了系统的集成度。采用UMC 0.6μm高压BCD工艺模型对去饱和过流检测电路进行前仿和后仿。仿真结果表明,采用线性温度补偿方法,基准电路的过流阈值电压典型值为6.97 V,温度系数为19.5×10~(-6)/℃。IGBT开启后消隐时间为920 ns。在不同工艺角仿真中,后仿固定延迟时间在2.8～4 ms之间变化,典型值为3.3 ms,使功率回路储能元件中的冗余能量充分释放。
An insulated gate bipolar transistor(IGBT) desaturation(DESAT) overcurrent detection circuit with fixed delay time was proposed.A fixed delay time circuit was added into the IGBT DESAT overcurrent detection circuit.When the overcurrent signal was detected,it was turned off immediately to prevent it from being burned out.At the same time,the fixed delay time circuit started timing.After fixed delay time,the error signal was cleared and the IGBT returned to normal operation status.The reliability and safety of the IGBT power circuit were improved.The integration of the system was increased with adding the fixed delay time circuit into the IGBT drive chip.The UMC 0.6 μm HV BCD process model was used for the pre-and post-simulation of the DESAT overcurrent detection circuit.The simulation results show that the typical overcurrent threshold voltage of reference circuit is 6.97 V and the temperature coefficient is 19.5×10-6/℃ with linear temperature compensation.After the IGBT is turned on,the blan-king time is 920 ns.The post-imitation fixed delay time changes from 2.8 ms to 4 ms in different corners and the typical value is 3.3 ms.The redundant energy in power circuit storage elements is fully released.
An insulated gate bipolar transistor(IGBT) desaturation(DESAT) overcurrent detection circuit with fixed delay time was proposed.A fixed delay time circuit was added into the IGBT DESAT overcurrent detection circuit.When the overcurrent signal was detected,it was turned off immediately to prevent it from being burned out.At the same time,the fixed delay time circuit started timing.After fixed delay time,the error signal was cleared and the IGBT returned to normal operation status.The reliability and safety of the IGBT power circuit were improved.The integration of the system was increased with adding the fixed delay time circuit into the IGBT drive chip.The UMC 0.6 μm HV BCD process model was used for the pre-and post-simulation of the DESAT overcurrent detection circuit.The simulation results show that the typical overcurrent threshold voltage of reference circuit is 6.97 V and the temperature coefficient is 19.5×10-6/℃ with linear temperature compensation.After the IGBT is turned on,the blan-king time is 920 ns.The post-imitation fixed delay time changes from 2.8 ms to 4 ms in different corners and the typical value is 3.3 ms.The redundant energy in power circuit storage elements is fully released.
引文
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[2]孙浩,杨媛,高勇.基于4级Uce检测的大功率IGBT过流保护策略[J].电气传动,2017,47(8):76-80.SUN H,YANG Y,GAO Y.High-power IGBT overcurrent protection strategy based on the 4 levels of Ucedetection[J].Electric Drive,2017,47(8):76-80(in Chinese).
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[5]姚芳,胡洋,李铮,等.基于结温监测的风电IGBT热安全性和寿命耗损研究[J].电工技术学报,2018,33(9):2024-2033.YAO F,HU Y,LI Z,et al.Study on thermal safety and lifetime consumption of IGBT in wind power converters based on junction temperature monitoring[J].Transactions of China Electrotechnical Society,2018,33(9):2024-2033(in Chinese).
[6]胡亮灯,孙驰,陈玉林,等.大功率IGBT的短路故障检测[J].电工技术学报,2018,33(11):2592-2603.HU L D,SUN C,CHEN Y L,et al.Short-circuit fault detection for high-power IGBT[J].Transactions of China Electrotechnical Society,2018,33(11):2592-2603(in Chinese).
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[9]林少波.高精度高电源电压抑制比CMOS带隙基准源设计[D].西安:西安电子科技大学,2012.
[10]PENG L D,CAO Y,PAN X F,et al.A low-power relaxation oscillator with improved thermal stability[C]∥Proceedings of the 14thInternational SOC Design Conference.Seoul,South Korea,2017:115-116.
[11]常垚,陈玉香,李武华,等.基于关断电流最大变化率的压接式IGBT模块结温提取方法[J].电工技术学报,2017,32(12):70-78.CHANG Y,CHEN Y X,LI W H,et al.Junction temperature extraction with maximum collector current falling rate during turn-off for press-pack IGBT modules[J].Transactions of China Electrotechnical Society,2017,32(12):70-78(in Chinese).
[12]NATH B,MAJUMDER A.Binary counter based gated clock tree for integrated CPU chip[C]∥Proceedings of IEEE International Symposium on Nanoelectronic and Information Systems.Bhopal,India,2017:229-233.
[2]孙浩,杨媛,高勇.基于4级Uce检测的大功率IGBT过流保护策略[J].电气传动,2017,47(8):76-80.SUN H,YANG Y,GAO Y.High-power IGBT overcurrent protection strategy based on the 4 levels of Ucedetection[J].Electric Drive,2017,47(8):76-80(in Chinese).
[3]HU L D,SUN C,CHEN Y L,et al.On-line measuring method of high-power IGBT collector current[C]∥Proceedings of the 17thInternational Conference on Electrical Machines and Systems.Hangzhou,China,2014:1945-1951.
[4]黄建伟,刘国友,余伟,等.新型无损IGBT短路耐性测试电路[J].半导体技术,2016,41(1):70-75.HUANG J W,LIU G Y,YU W,et al.Novel nondestructive IGBT short-circuit tolerance test circuit[J].Semiconductor Technology,2016,41(1):70-75(in Chinese).
[5]姚芳,胡洋,李铮,等.基于结温监测的风电IGBT热安全性和寿命耗损研究[J].电工技术学报,2018,33(9):2024-2033.YAO F,HU Y,LI Z,et al.Study on thermal safety and lifetime consumption of IGBT in wind power converters based on junction temperature monitoring[J].Transactions of China Electrotechnical Society,2018,33(9):2024-2033(in Chinese).
[6]胡亮灯,孙驰,陈玉林,等.大功率IGBT的短路故障检测[J].电工技术学报,2018,33(11):2592-2603.HU L D,SUN C,CHEN Y L,et al.Short-circuit fault detection for high-power IGBT[J].Transactions of China Electrotechnical Society,2018,33(11):2592-2603(in Chinese).
[7]MUENSTER P,LEXOW D,CORDT D,et al.Combination of forward-voltage measurement and short-circuit detection for high-voltage RC-IGBTs[C]∥Proceedings of PCIM Europe.Berlin,Germany,2017:1531-1536.
[8]Infineon.ACPL-34JT新型汽车级IGBT门极驱动光耦及评估测试.[K].Infineon,2012:1-20.
[9]林少波.高精度高电源电压抑制比CMOS带隙基准源设计[D].西安:西安电子科技大学,2012.
[10]PENG L D,CAO Y,PAN X F,et al.A low-power relaxation oscillator with improved thermal stability[C]∥Proceedings of the 14thInternational SOC Design Conference.Seoul,South Korea,2017:115-116.
[11]常垚,陈玉香,李武华,等.基于关断电流最大变化率的压接式IGBT模块结温提取方法[J].电工技术学报,2017,32(12):70-78.CHANG Y,CHEN Y X,LI W H,et al.Junction temperature extraction with maximum collector current falling rate during turn-off for press-pack IGBT modules[J].Transactions of China Electrotechnical Society,2017,32(12):70-78(in Chinese).
[12]NATH B,MAJUMDER A.Binary counter based gated clock tree for integrated CPU chip[C]∥Proceedings of IEEE International Symposium on Nanoelectronic and Information Systems.Bhopal,India,2017:229-233.