摘要
基于新型的时域有限差分光子学分析方法联合有限元电学分析方法研究了Pt/CdS紫外与InSb红外双色焦平面阵列探测器的双色探测机理.研究发现超薄Pt金属膜与CdS形成肖特基结可以获得较大的紫外光响应并能更好耦合红外光.采用像元间距为50μm的Pt/CdS与InSb键合结构,可以很好地抑制像元间的串音.结果证明了紫外-红外双色探测的可行性,该方法将为紫外—红外双色探测器的设计提供基础指导.
Based on finite difference time domain method( FDTD) and finite element method( FEM),the mechanism of Pt/CdS and InSb ultraviolet-infrared dual-color focal-plane arrays was investigated.It was found that a high ultraviolet photo response can be achieved for Pt/CdS Schottky junction under an ultrathin Pt top contact.Further simulations showthat the ultrathin top contact can efficiently couple the infrared radiation for the dual-color focal-plane array detector.The center to center spacing of each pixel of 50 μm in the ultraviolet and infrared dualcolor focal-plane array detector based on Pt/CdS and InSb junctions can significantly reduce crosstalk.Our work provides fundamental guidance for optimization and design of ultraviolet and infrared dual-color detector.
引文
[1]Chang S C,Bharathan J,Yang Y,et al.Dual-color polymer light-emitting pixels processed by hybrid inkjet printing[J].Appl.Phys.Lett.1998,73(18):2561-2563.
[2]Guo L H,Xu S H,Ma X M,et al.Dual-color plasmonic enzymelinked immunosorbent assay based on enzyme-mediated etching of Au nanoparticles[J],Scientific Reports,2016,6:32755.
[3]Wang P,Liu S S,Luo W J,et al.Arrayed van der Waals Broadband detectors for Dual band detection[J].Advanced Materials,2017,29(16):1604439.
[4]Hu W D,Ye Z H,Liao L,et al.A 128×128 long-wavelength/mid-wavelength two-color Hg Cd Te infrared focal plane array detector with ultra-low spectral crosstalk[J].Optics Letters,2014,39(17):5130-5133.
[5]Rajavel R D,Jamba D M,Jensen J E,et al.Molecular beam epitaxial growth and performance of Hg Cd Te-based simultaneous-mode two-color detectors[J].Journal of Electronic Materials,1998,27(6):747-751.
[6]Reine M B,Hairston A,O’Dette P,et al.Simultaneous MW/LWdual-band MOCVD Hg Cd Te 64×64 FPAs[J].Proceedings of SPIE,1998,3379:200-212.
[7]Rajavel R D,Jamba D M,Jensen J E,et al.Molecular beam epitaxial growth and performance of integrated multispectral Hg Cd Te photodiodes for the detection of mid-wave infrared radiation[J].Journal of Crystal Growth,1998,184:1272-1278.
[8]Tennant W E,Thomas M,Kozlowski L J,et al.A novel simultaneous unipolar multispectral integrated technology approach for Hg Cd Te IRdetectors and focal plane arrays[J].Journal of Electronic Materials,2001,30(6):590-594.
[9]Schneider H,Maier T,Fleissner J,et al.Infrared focal plane array based on MWIR/LWIR dual-band QWIPs:detector optimization and array properties[J].Proceedings of SPIE,2005,5726:35-42.
[10]Gunapala S D,Bandara S V,Liu J K,et al.Demonstration of Megapixel Dual-Band QWIP Focal Plane Array[J].IEEE Journal of Quantum Electronics,2010,46(2):285-293.
[11]Li X,Zhu C X,Zhu X,et al.Background limited ultraviolet photodetectors of solar-blind ultraviolet detection[J].Applied Physics Letters,2013,103(17):896-630.
[12]Williams D L,Davey S T,Kashyap R,et al.Ultraviolet absorption studies on photosensitive germanosilicate preforms and fibers[J].Appl.Phys.Lett.1991,59(7):762-764.
[13]Liu X,Jiang L,Zou X,et al.Scalable integration of indium zinc oxide/photosensitive-nanowire composite thin-film transistors for transparent multicolor photodetectors array[J].Advanced Materials,2014,26(18):2919-2924.
[14]Miao J S,Hu W D,Guo N,et al.High-responsivity Graphene/In As nanowire Heterojunction near-Infrared photodetectors with distinct photocurrent On/Off ratios[J].Small,2015,11(8):936-942.
[15]Qin Q,Zhu X C,Yang W Y.The development of Pt/Cd S schottky barrier ultraviolet detector[J].Infrared Technology,2006,28(4):234-237.
[16]Forsyth N M,Dharmadasa I M,Sobiesierski Z,et al.Schottky barrier to Cd S and their important in Schottky barrier theories[J].Semiconductor Science and Technology,1989,4(1):57.
[17]HU Wei-Da,LIANG Jian,YUE Fang-Yu et al.Recent progress of subwavelength photon trapping Hg Cd Te infrared detector[J].J.Infrared Millim.Waves(胡伟达,梁健,越方禹,等.新型亚波长陷光结构Hg Cd Te红外探测器研究进展,红外与毫米波学报),2016,35(1):25-36.
[18]Sondheimer E H.The mean free path of electrons in metals[J].Advances in Physics,1952,1(1):1-42.
[19]Fischer G,Hoffmann H.Oscillations of the electrical conductivity with film thickness in very thin platinum films[J].Solid State Commun.1980,35:793-796.
[20]Marcos de Oliveira Melo,Luciana Almeida Silva.Visible light-induced hydrogen production from glycerol aqueous solution on hybrid Pt-Cd S-Ti O2photocatalysts[J].Journal of Photochemistry and Photobiology A:Chemistry,2011,226:36-41.
[21]Ashley T,Baker I M,Burke T M,et al.In Sb focal plane array(FPAs)grown by molecular beam epitaxy(MBE)[J].Proceedings of SPIE,2000,4028:398-403.
[22]Bai J,Hu W D,Guo N,et al.Performance optimization of In Sb infrared focal-plane arrays with diffractive microlenses[J].Journal of Electronic Materials,2014,43(8):2795-2801.
[23]Guo N,Hu W D,Chen X S,et al.Investigation of radiation collection by the In Sb infrared focal plane arrays with micro-optic structures[J].Journal of Electronic Materials,2013,42:3181-3185.
[24]MENG Qing-Duan,LV Yan-Qiu,LU Zheng-Xiong,et al.Stress in In Sb infrared focal plane array detector analyzed with ansys[J].J.Infrared Millim.Waves(孟庆端,吕衍秋,鲁正雄,等.In Sb红外焦平面探测器结构应力的ANSYS分析,红外与毫米波学报),2010,29(6):431-434.