InAs/GaSb二类超晶格中长波双色红外焦平面器件研究
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摘要
采用分子束外延工艺方法生长的InAs/GaSb二类超晶格材料因其独特的能带断带结构,极大地降低了俄歇复合暗电流,且其较大的电子有效质量使得隧穿电流进一步降低,因此超晶格材料成为国内外红外领域研究关注的重点。本文介绍的超晶格中长波双色探测器采用npn背靠背结构,阵列规模为320×256,像元中心距为30mm。其中测得80K温度下,-0.1V偏压工作时中波50%截止波长为4.5mm,0.17V偏压工作时长波50%截止波长为10.5mm,对应的峰值量子效率为45%、33%,相应的暗电流密度为5.94×10~(-7)A/cm~2@-0.1V、1.72×10~(-4)A/cm~2@0.17V,NETD为16.6mK、15.6mK。
InAs/GaSb type-II superlattice material grown by molecular beam epitaxy(MBE) technology offers a unique broken energy band structure, which facilitates the suppression of Auger recombination dark current. The large electron effective mass in superlattice leads to a further reduction in interband tunneling current. Therefore,the study of superlattice material has become a major topic of research globally. This paper introduces a mid-/long-wavelength dual band infrared focal plane array photodetector with npn architecture. The focal plane array has a 320×256 format with a 30 ?m pitch. At 80 K, with the operating bias of-0.1 V and 0.17 V,the 50% cut-off wavelengths were 4.5 ?m and 10.5 ?m. Further, peak quantum efficiencies of 45% and 33% were realized. Dark current density values were 5.94×10-7 A/cm2@-0.1 V,1.72×10-4 A/cm2@0.17 V; meanwhile,the focal plane array exhibited an NETD of 16.6 m K and 15.6 m K.
InAs/GaSb type-II superlattice material grown by molecular beam epitaxy(MBE) technology offers a unique broken energy band structure, which facilitates the suppression of Auger recombination dark current. The large electron effective mass in superlattice leads to a further reduction in interband tunneling current. Therefore,the study of superlattice material has become a major topic of research globally. This paper introduces a mid-/long-wavelength dual band infrared focal plane array photodetector with npn architecture. The focal plane array has a 320×256 format with a 30 ?m pitch. At 80 K, with the operating bias of-0.1 V and 0.17 V,the 50% cut-off wavelengths were 4.5 ?m and 10.5 ?m. Further, peak quantum efficiencies of 45% and 33% were realized. Dark current density values were 5.94×10-7 A/cm2@-0.1 V,1.72×10-4 A/cm2@0.17 V; meanwhile,the focal plane array exhibited an NETD of 16.6 m K and 15.6 m K.
引文
[1]Yann REIBEL,Fabien Chabuel,Cedric Vaz,et al.Infrared Dual Band detectors for next generation[C]//Proc.of SPIE,2011,8012:801238.
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[6]Olson B V,Shaner E A,Kim J K,et al.Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice[J].Applied Physics Letters,2012,101(9):261-150.
[7]Rogalaski.A material considerations for third generation infrared photon detectors[J].Infrared Physics&Technology,2007,50:240-252.
[8]Robert Rehm,Martin Walther,Johannes Schmitz,et al.2nd and 3rd Generation Thermal Imagers based on Type-II Superlattice Photodiodes[C]//Proc.of SPIE,2006,6294:629404.
[9]Razeghi M,Haddadi A,Hoang A M,et al.High-Performance Biasselectable Dual-band Mid-/Long-wavelength Infrared Photodetectors and Focal Plane Arrays based on InAs/GaSb Type-II Superlattices[C]//Proc.of SPIE,2013,8704:87040S-1.
[10]徐庆庆,陈建新,周易,等.InAs/GaSb II类超晶格中波红外探测器[J].红外与激光工程,2012,41(1):7-9.XU Qingqing,CHEN Jianxin,ZHOU Yi,et al.Mid-wavelength infrared InAs/GaSb type-II superlattice detectors[J].Infrared and Laser Engineering,2012,41(1):7-9.
[11]陈建新,林春,何力.InAs/GaSb II类超晶格红外探测技术[J].红外与激光工程,2011,40(4):786-790.CHEN Jianxin,LIN Chun,HE Li.InAs/GaSbtype II superlattice infrared detection technology[J].Infrared and Laser Engineering,2011,40(4):786-790.
[12]HONG Yuehao,WEI Xiang,WANG Guowei,et al.Sulfurizing Method for Passivation Used in InAs/GaSb Type-II Superlattice Phontodetectors[C]//Proc of SPIE,2014,9300:93001K-93001K-6.
[13]WANG G,XU Y,WANG L,et al.Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection[J].J.Phys D-Appl Phys,2012,45(26):265103.
[14]张艳华,马文全,卫炀,等.长波和甚长波及其双色InAs/GaSb二类超晶格红外探测器的研究进展[J].中国科学:物理学力学天文学,2014,44(4):390-395.ZHANG Y H,MA W Q,WEI Y,et al.Long wavelength,very long wavelength and narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetectors[J].Scientia Sinica Physica,Mechanica&Astronomica,2014,44(4):390-395.
[15]白治中,徐志成,周易,等.320×256元InAs/GaSbⅡ类超晶格中波红外双色焦平面探测器[J].红外与毫米波学报,2015,34(6):716-720.BAI Zhizhong,XU Zhicheng,ZHOU Yi,et al.320×256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays[J].J.Infrared Millim.Waves,2015,34(6):716-720.
[2]Hoang A M,CHEN G,Haddadi A,et al.High performance bias-selectable dual-band Short-/Mid-wavelength Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices[C]//Proc.of SPIE,2013,8631:86311K.
[3]Plis E,Naydenkov M,Myers S,et al.Dual-band pBp detectors based on InAs/GaSb strained layer superlattices[J].Infrared Physics&Technology,2013,59:28-31.
[4]Stephen Myers,Elena Plis,Chris Morath,et al.Comparison of superlattice based dual color nBn and pBp infrared detectors[C]//Proc.of SPIE,2011,8155:815507-1.
[5]Cellek O O,SKim H,Reno J L,et al.NIR/LWIR Dual-band Infrared Photodetectors with Optical Addressing[C]//Proc.of SPIE,2012,8353:83533E.
[6]Olson B V,Shaner E A,Kim J K,et al.Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice[J].Applied Physics Letters,2012,101(9):261-150.
[7]Rogalaski.A material considerations for third generation infrared photon detectors[J].Infrared Physics&Technology,2007,50:240-252.
[8]Robert Rehm,Martin Walther,Johannes Schmitz,et al.2nd and 3rd Generation Thermal Imagers based on Type-II Superlattice Photodiodes[C]//Proc.of SPIE,2006,6294:629404.
[9]Razeghi M,Haddadi A,Hoang A M,et al.High-Performance Biasselectable Dual-band Mid-/Long-wavelength Infrared Photodetectors and Focal Plane Arrays based on InAs/GaSb Type-II Superlattices[C]//Proc.of SPIE,2013,8704:87040S-1.
[10]徐庆庆,陈建新,周易,等.InAs/GaSb II类超晶格中波红外探测器[J].红外与激光工程,2012,41(1):7-9.XU Qingqing,CHEN Jianxin,ZHOU Yi,et al.Mid-wavelength infrared InAs/GaSb type-II superlattice detectors[J].Infrared and Laser Engineering,2012,41(1):7-9.
[11]陈建新,林春,何力.InAs/GaSb II类超晶格红外探测技术[J].红外与激光工程,2011,40(4):786-790.CHEN Jianxin,LIN Chun,HE Li.InAs/GaSbtype II superlattice infrared detection technology[J].Infrared and Laser Engineering,2011,40(4):786-790.
[12]HONG Yuehao,WEI Xiang,WANG Guowei,et al.Sulfurizing Method for Passivation Used in InAs/GaSb Type-II Superlattice Phontodetectors[C]//Proc of SPIE,2014,9300:93001K-93001K-6.
[13]WANG G,XU Y,WANG L,et al.Complete fabrication study of InAs/GaSb superlattices for long-wavelength infrared detection[J].J.Phys D-Appl Phys,2012,45(26):265103.
[14]张艳华,马文全,卫炀,等.长波和甚长波及其双色InAs/GaSb二类超晶格红外探测器的研究进展[J].中国科学:物理学力学天文学,2014,44(4):390-395.ZHANG Y H,MA W Q,WEI Y,et al.Long wavelength,very long wavelength and narrow-band long-/very-long wavelength two-color type-II InAs/GaSb superlattice photodetectors[J].Scientia Sinica Physica,Mechanica&Astronomica,2014,44(4):390-395.
[15]白治中,徐志成,周易,等.320×256元InAs/GaSbⅡ类超晶格中波红外双色焦平面探测器[J].红外与毫米波学报,2015,34(6):716-720.BAI Zhizhong,XU Zhicheng,ZHOU Yi,et al.320×256 dual-color mid-wavelength infrared InAs/GaSb superlattice focal plane arrays[J].J.Infrared Millim.Waves,2015,34(6):716-720.