紫外-红外双色集成探测器的发展与现状
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摘要
随着军事和民用对高集成度、多色化光电探测的不断需求,在近几十年内,紫外-红外(UV-IR)双色集成探测器从无到有,从彼此独立的紫外和红外探测器的简单集成发展到如今量子阱结构、键合结构等新型集成技术,但不同的光敏材料或系统带来较大的晶格失配问题仍然限制了其发展与应用。本文阐述了紫外-红外双色集成探测技术在发展过程中的主要问题,并以时间和紫外探测技术为线索简述了紫外-红外双色集成探测器的发展历史及研究现状。
Demand has been continuous for highly integrated and multi-band photoelectric detection in military and civilian applications. In recent decades, ultraviolet–infrared(UV-IR) dual-band integrated detectors have been gone through from scratch and have continuously developed from the simple integration of separate UV and IR detectors to new integrated technologies such as quantum-well structures and bonding structures. However, the problem of large lattice mismatches caused by different photosensitive materials or systems has hindered the development and application of the technology of monolithic integration. In this paper, we describe the main issue, process, and research status of the development of the UV-IR dual-band integrated detectors based on history and UV detection technology.
Demand has been continuous for highly integrated and multi-band photoelectric detection in military and civilian applications. In recent decades, ultraviolet–infrared(UV-IR) dual-band integrated detectors have been gone through from scratch and have continuously developed from the simple integration of separate UV and IR detectors to new integrated technologies such as quantum-well structures and bonding structures. However, the problem of large lattice mismatches caused by different photosensitive materials or systems has hindered the development and application of the technology of monolithic integration. In this paper, we describe the main issue, process, and research status of the development of the UV-IR dual-band integrated detectors based on history and UV detection technology.
引文
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