AlGaN/GaN异质结单片集成紫外/红外双色探测器
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摘要
采用分子束外延(MBE)技术在蓝宝石衬底上依次生长n+GaN下电极层、i型AlxGa1-xN势垒层和n+GaN发射极层,并通过半导体微细加工技术,制作了AlGaN/GaN异质结单片集成紫外/红外双色探测器。该器件利用不同的探测机理,同时实现了红外光和紫外光探测,拓展了响应光谱的范围。红外光探测是通过AlGaN/GaN异质结界面自由电子吸收和功函数内部光致发射效应完成的,紫外光探测是通过AlxGa1-xN势垒层带间吸收完成的。对单元器件的暗电流特性、紫外及红外光谱特性进行了测试。测试结果表明,紫外响应截止波长356 nm,响应度180 mA/W,红外响应峰值波长14.5μm,响应度49 mA/W。
Using molecular beam epitaxy( MBE) technology,the epitaxial layer structure was grown on sapphire substrate from bottom to top as following: n+doped GaN bottom contact,undoped AlxGa1-xN barrier layer,n-doped GaN emitter layer. By semiconductor microfabrication technique,the monolithically integrated ultraviolet /infrared( UV /IR) dual color photodetector with AlGaN /GaN heterojunction structure was realized. The device achieves dual-color detector using different detection mechanisms,and expands the responsible spectrum. The infrared response was due to the free carrier absorption in the AlxGa1-xN /GaN heterojunction and the internal photoemission over the work function at the emitter barrier interface. The ultraviolet response was due to inter-band absorption in the AlxGa1-xN barrier region while. The dark current and both the UV and IR spectrum characteristic of the unit structure of IR /UV dual-color photodetector were measured and analyzed. The test results show that the cutoff wavelength of the UV spectrum is 356 nm and the UV responsivity is 180 mA /W. The peak wavelength of the IR spectrum and the IR responsivity is 14. 5 μm and 49 mA /W,respectively.
Using molecular beam epitaxy( MBE) technology,the epitaxial layer structure was grown on sapphire substrate from bottom to top as following: n+doped GaN bottom contact,undoped AlxGa1-xN barrier layer,n-doped GaN emitter layer. By semiconductor microfabrication technique,the monolithically integrated ultraviolet /infrared( UV /IR) dual color photodetector with AlGaN /GaN heterojunction structure was realized. The device achieves dual-color detector using different detection mechanisms,and expands the responsible spectrum. The infrared response was due to the free carrier absorption in the AlxGa1-xN /GaN heterojunction and the internal photoemission over the work function at the emitter barrier interface. The ultraviolet response was due to inter-band absorption in the AlxGa1-xN barrier region while. The dark current and both the UV and IR spectrum characteristic of the unit structure of IR /UV dual-color photodetector were measured and analyzed. The test results show that the cutoff wavelength of the UV spectrum is 356 nm and the UV responsivity is 180 mA /W. The peak wavelength of the IR spectrum and the IR responsivity is 14. 5 μm and 49 mA /W,respectively.
引文
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[12]朱惜辰.红外探测器的进展[J].红外技术,1999,21(6):12-15.
[2]沈均平,刘建永,胡江华,等.武装直升机一体化复合对抗红外/紫外双色制导研究[J].红外技术,2005,27(6):505-509.
[3]王江安,宗思光,赵坤.海空背景下红外-紫外双色探技术研究[J].光学与光电技术,2003,1(3):56-59.
[4]PERERAA A G U,GAMINI A,RANGA J,et al.Dual band HEIWIP detectors with nitride materials[J]Proceedings of SPIE,2007,6678:S-1-S-10.
[5]HOFSTETTER D,THERON R,BAUMANN E,et al.Monolithically integrated AlGaN/GaN/AlN-based solarblind ultraviolet and near-infrared detectors[J].Electronics Letters,2008,44(16):47-49.
[6]STARIKOV D,BONEY C,PILLAI R,et al.Dualband UV/IR optical sensors for fire and flame detection and target recognition[C]//Proceedings of ISA/IEEE.new orleans,LA,USA,2004:36-39.
[7]ARIYAWANSA G,RINZAN M B,STRASSBURG M,et al,GaN/AlGaN heterojunction infrared detector responding in 8-14μm and 20-70μm ranges[J].Applied Physics Letters,2006,89(1):141122-1-141122-3.
[8]张燕,王妮丽,孙璟兰,等.新型的AlGaN/PZT材料紫外/红外双波段探测器[J].红外与激光工程,2009,38(2):210-212.
[9]李献杰,赵永林,齐利芳,等.GaN/BST单片集成紫外红外双色探测器的研制[J].半导体技术,2008,2008(S1):238-240.
[10]SHAO J F,PERERA A G U,JAYAWEERA P V V,et al.Low-cost UV-IR dual band detector using nonporous ZnO film sensitized by PbS quantum dots[J].Chin Phys Lett,2010,27(2):027302.
[11]周利刚,沈文忠.GaN/AlGaN双带红外探测及光子频率上转换研究[J].物理学报,2009,58(10):6863-6872.
[12]朱惜辰.红外探测器的进展[J].红外技术,1999,21(6):12-15.