中波碲镉汞光电二极管pn结特性研究
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摘要
采用液相外延(LPE)生长的中波Hg Cd Te薄膜,基于B离子注入n-on-p平面结技术,制备了LBIC测试结构和I-V测试芯片并进行了相应的测试和分析。LBIC测试结果表明,Hg Cd Te pn结实际结区尺寸扩展4~5?m,这主要与光刻、B离子注入以及注入后低温退火等器件工艺有关。二极管器件C-V和I-V特性研究表明,所制备的Hg Cd Te pn结不是突变结也不是线性缓变结。中波Hg Cd Te二极管器件最高动态阻抗大于30 G?,器件优值R0A高达1.21×105?cm2,表现出较好的器件性能。
Based on LPE MW Hg Cd Te growth technique and B ion implant n-on-p planar junction technology, the LBIC test structure and I-V test chip are prepared and measured. LBIC test results show that the actual size of Hg Cd Te pn junction extends 4-5 ?m, which is mainly related to the device process of the lithography, B ion implant and low temperature annealing followed implantation. Studies on the C-V and I-V characteristics of diode point out that Hg Cd Te pn junction is neither abrupt junction nor linearly graded junction. The maximum dynamic resistance of photodiode exceeds 30 G?, and the R0 A value of device reaches 1.21×105 ?cm2, which shows good device performance.
Based on LPE MW Hg Cd Te growth technique and B ion implant n-on-p planar junction technology, the LBIC test structure and I-V test chip are prepared and measured. LBIC test results show that the actual size of Hg Cd Te pn junction extends 4-5 ?m, which is mainly related to the device process of the lithography, B ion implant and low temperature annealing followed implantation. Studies on the C-V and I-V characteristics of diode point out that Hg Cd Te pn junction is neither abrupt junction nor linearly graded junction. The maximum dynamic resistance of photodiode exceeds 30 G?, and the R0 A value of device reaches 1.21×105 ?cm2, which shows good device performance.
引文
[1]曾戈虹.p-on-n Hg Cd Te红外探测器机理分析与性能计算[J].红外技术,2013,35(5):249-258.ZENG Ge-hong.Fundamentals of p-on-n Hg Cd Te infrared detectors and their detectivity calculations[J].Infrared Technology,2013,35(5):249-258.
[2]Rutkowski J.Recent developments in Hg Cd Te photovolatic detectors[J].Opto-Electronics Review,1997,5(3):217-223.
[3]Philippe Tribolet.Hg Cd Te technology in France[J].C.R.Physique,2003,4(10):1121-1131.
[4]Philippe Bensussan,Philippe Tribolet,Gérard Destefanis,et al.50years of successful MCT research and production in France[C]//Proc.of SPIE,2009,7298:72982N-1-72982N-31.
[5]Sewell R H,Musca C A,Antoszewski J,et al.Laser-beam-induced current mapping of spatial nonuniformities in molecular beam epitaxy As-grown Hg Cd Te[J].Journal of Electronic Materials,2004,33(6):572-578.
[6]Redfern D A,Musca C A,Dell J M,et al.Correlation of laser-beam-induced current with current-voltage measurements in Hg Cd Te photodiodes[J].Journal of Electronic Materials,2004,33(6):560-571.
[7]Musca C A,Redfern D A,Smith E P G,et al.Junction depth measurement in Hg Cd Te using laser beam induced current(LBIC)[J].Journal of Electronic Materials,1999,28(6):603-610.
[8]Musca C A,Siliquini J F,Smith E P G,et al.Laser beam induced current imaging of reactive ion etching induced n-type doping in Hg Cd Te[J].Journal of Electronic Materials,1998,27(6):661-667.
[9]Redfern D A,Thomas J A,Musca C A,et al.Diffusion length measurements in p-Hg Cd Te using laser beam induced current[J].Journal of Electronic Materials,2001,30(6):696-702.
[10]周松敏,查访星,郭青天,飞秒激光对P型碲镉汞打孔的形貌和PN结特性研究[J].红外与毫米波学报,2010,29(5):337-341.ZHOU Song-Min,ZHA Fang-Xing,GUO Qing-Tian,et al.The morphology of micro hole PN junction in P-type Hg Cd Te formed by femto second laser drilling[J].Journal of Infrared and Millimeter Waves,2010,29(5):337-341.
[11]贾嘉,陈贵宾,龚海梅,室温短波碲镉汞结区的LBIC方法研究[J].红外与毫米波学报,2005,24(1):11-14.JIA Jia,CHEN Gui-Bin,GONG Hai-Mei,et al.Study on the junctions of SWIR Hg Cd Te photo diodes at room temperature with laser beam induced current[J].Journal of Infrared and Millimeter Waves,2005,24(1):11-14.
[12]茅文英,孙全,褚君浩.激光束感应电流法研究Hg Cd Te电活性缺陷和焦平面器件的光电特性[J].红外与毫米波学报,2001,20(4):259-262.MAO Wen-Ying,SUN Quan,CHU Jun-Hao,et al.Electrically active defects in Hg Cd Te and opto-electronic properties of focal plane array by laser beam induced current[J].Journal of Infrared and Millimeter Waves,2001,20(4):259-262.
[13]叶振华,胡晓宁,蔡炜颖,等.激光束诱导电流在Hg Cd Te双色探测器工艺检测中的应用[J].红外与毫米波学报,2001,20(4):459-462YE Zhen-Hua,HU Xiao-Ning,CAI Wei-Ying,et al.Application of laser beam induced current for technology detecting of Hg Cd Te two-color detector[J].Journal of Infrared and Millimeter Waves,2001,20(4):259-262.
[14]刘恩科,朱秉升,罗晋生.半导体物理学[M].北京:国防工业出版社,2004.LIU En-Ke,ZHU Bing-Sheng,LUO Jin-Sheng.The Physics of Semiconductors[M].Beijing:National Defence Industry Press,2004.
[15]何波,史衍丽,徐静.C-V法测量pn结杂质浓度分布的基本原理及应用[J].红外,2006,27(10):5-10.HE Bo,SHI Yan-Li,XU Jing.Principle of the C-V method for measuring impurity distribution in junction diodes and its appliction[J].Infrared,2006,27(10):5-10.
[16]Reine M B,Marciniec J W,Wong K K,et al.Hg Cd Te MWIR back-illuminated electron-initiated avalanche photodiode arrays[J].Journal of Electronic Materials,2007,36(8):1059-1067.
[17]Gravrand O,Mollard L,Largeron C.et al.Study of LWIR and VLWIR focal plane array developments:comparison between p-on-n and different n-on-p technologies on LPE Hg Cd Te[J].Journal of Electronic Materials,2009,38(8):1733-1740.
[2]Rutkowski J.Recent developments in Hg Cd Te photovolatic detectors[J].Opto-Electronics Review,1997,5(3):217-223.
[3]Philippe Tribolet.Hg Cd Te technology in France[J].C.R.Physique,2003,4(10):1121-1131.
[4]Philippe Bensussan,Philippe Tribolet,Gérard Destefanis,et al.50years of successful MCT research and production in France[C]//Proc.of SPIE,2009,7298:72982N-1-72982N-31.
[5]Sewell R H,Musca C A,Antoszewski J,et al.Laser-beam-induced current mapping of spatial nonuniformities in molecular beam epitaxy As-grown Hg Cd Te[J].Journal of Electronic Materials,2004,33(6):572-578.
[6]Redfern D A,Musca C A,Dell J M,et al.Correlation of laser-beam-induced current with current-voltage measurements in Hg Cd Te photodiodes[J].Journal of Electronic Materials,2004,33(6):560-571.
[7]Musca C A,Redfern D A,Smith E P G,et al.Junction depth measurement in Hg Cd Te using laser beam induced current(LBIC)[J].Journal of Electronic Materials,1999,28(6):603-610.
[8]Musca C A,Siliquini J F,Smith E P G,et al.Laser beam induced current imaging of reactive ion etching induced n-type doping in Hg Cd Te[J].Journal of Electronic Materials,1998,27(6):661-667.
[9]Redfern D A,Thomas J A,Musca C A,et al.Diffusion length measurements in p-Hg Cd Te using laser beam induced current[J].Journal of Electronic Materials,2001,30(6):696-702.
[10]周松敏,查访星,郭青天,飞秒激光对P型碲镉汞打孔的形貌和PN结特性研究[J].红外与毫米波学报,2010,29(5):337-341.ZHOU Song-Min,ZHA Fang-Xing,GUO Qing-Tian,et al.The morphology of micro hole PN junction in P-type Hg Cd Te formed by femto second laser drilling[J].Journal of Infrared and Millimeter Waves,2010,29(5):337-341.
[11]贾嘉,陈贵宾,龚海梅,室温短波碲镉汞结区的LBIC方法研究[J].红外与毫米波学报,2005,24(1):11-14.JIA Jia,CHEN Gui-Bin,GONG Hai-Mei,et al.Study on the junctions of SWIR Hg Cd Te photo diodes at room temperature with laser beam induced current[J].Journal of Infrared and Millimeter Waves,2005,24(1):11-14.
[12]茅文英,孙全,褚君浩.激光束感应电流法研究Hg Cd Te电活性缺陷和焦平面器件的光电特性[J].红外与毫米波学报,2001,20(4):259-262.MAO Wen-Ying,SUN Quan,CHU Jun-Hao,et al.Electrically active defects in Hg Cd Te and opto-electronic properties of focal plane array by laser beam induced current[J].Journal of Infrared and Millimeter Waves,2001,20(4):259-262.
[13]叶振华,胡晓宁,蔡炜颖,等.激光束诱导电流在Hg Cd Te双色探测器工艺检测中的应用[J].红外与毫米波学报,2001,20(4):459-462YE Zhen-Hua,HU Xiao-Ning,CAI Wei-Ying,et al.Application of laser beam induced current for technology detecting of Hg Cd Te two-color detector[J].Journal of Infrared and Millimeter Waves,2001,20(4):259-262.
[14]刘恩科,朱秉升,罗晋生.半导体物理学[M].北京:国防工业出版社,2004.LIU En-Ke,ZHU Bing-Sheng,LUO Jin-Sheng.The Physics of Semiconductors[M].Beijing:National Defence Industry Press,2004.
[15]何波,史衍丽,徐静.C-V法测量pn结杂质浓度分布的基本原理及应用[J].红外,2006,27(10):5-10.HE Bo,SHI Yan-Li,XU Jing.Principle of the C-V method for measuring impurity distribution in junction diodes and its appliction[J].Infrared,2006,27(10):5-10.
[16]Reine M B,Marciniec J W,Wong K K,et al.Hg Cd Te MWIR back-illuminated electron-initiated avalanche photodiode arrays[J].Journal of Electronic Materials,2007,36(8):1059-1067.
[17]Gravrand O,Mollard L,Largeron C.et al.Study of LWIR and VLWIR focal plane array developments:comparison between p-on-n and different n-on-p technologies on LPE Hg Cd Te[J].Journal of Electronic Materials,2009,38(8):1733-1740.