飞秒激光脉冲数对P型HgCdTe激光打孔成结效果的影响
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摘要
飞秒激光对p型Hg Cd Te打孔形成PN结.该实验基于1 k Hz低重复频率飞秒激光采用不同脉冲数在p型Hg Cd Te上打孔形成尺寸不同的微孔结构.实验发现脉冲数是影响成结效果的重要参数.激光诱导电流(LBIC)检测表明,随着脉冲数由单个增至10个,微孔侧壁反型层宽度由13.5μm减小到10.5μm.当脉冲数增大至100个时,微孔LBIC信号曲线已严重偏离PN结所对应的正负峰对称线形,意味着结特性趋于失效.对LBIC曲线拟合表明,单脉冲打孔形成的PN结给出最大的载流子扩散长度,约为17μm,而10个脉冲对应的环孔PN结扩散长度则减小为12μm.
Femtosecond laser drilling induces PN junction in p-Hg Cd Te. In this work,femtosecond laser with repetition rate of 1 k Hz was used to generate different micrometer-sized holes. It was found that the pulse number is an important parameter which influences the effect of junction formation. Laser beam induced current( LBIC) characterization shows that the inversion layer thickness reduces from13. 5 μm to 10. 5 μm when the pulses increase from one to ten. The LBIC profile of a hole created with one hundred pulses deviates severely from the line shape of ideal PN junction,resulting in large leakage current. In addition,the fitting of LBIC curves shows that the diffusion length of the hole created by a single pulse is 17 μm whereas the one created by ten pulses reduces to 12 μm.
Femtosecond laser drilling induces PN junction in p-Hg Cd Te. In this work,femtosecond laser with repetition rate of 1 k Hz was used to generate different micrometer-sized holes. It was found that the pulse number is an important parameter which influences the effect of junction formation. Laser beam induced current( LBIC) characterization shows that the inversion layer thickness reduces from13. 5 μm to 10. 5 μm when the pulses increase from one to ten. The LBIC profile of a hole created with one hundred pulses deviates severely from the line shape of ideal PN junction,resulting in large leakage current. In addition,the fitting of LBIC curves shows that the diffusion length of the hole created by a single pulse is 17 μm whereas the one created by ten pulses reduces to 12 μm.
引文
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[4]Zha F X,Li M S,Shao J,et al.Femtosecond laser-drilling-induced HgC dT e photodiodes[J].Optics Letters,2010,35(7):971-973.
[5]Qiu W C,Cheng X A,Wang R,et al.Novel signal inversion of laser beam induced current for femtosecond-laserdrilling-induced junction on vacancy-doped p-type HgC dT e[J].Journal of Applied Physics,2014,115(20).
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[7]Eaton S M,Zhang H B,Herman P R.Heat accumulation effects in femtosecond laser-written waveguides with variable repetition rate[J].Optics Express,2005,13(12):4708-4716.
[8]YE Zhen-Hua,HU Xiao-Ning,CAI Wei-Ying,et al.Application of laser beam induced current for technology detecting of HgC dT e two-color detector[J].J.Infrared Millim.Waves(叶振华,胡晓宁,蔡炜颖,等.激光束诱导电流在HgC dT e双色探测器工艺检测中的应用.红外与毫米波学报),2005,24(6):459-462.
[9]Hong X K,Lu H,Zhang D B.Study on the structural characteristics of HgC dT e photodiodes using laser beam-induced current[J].Optical and Quantum Electronics,2013,45(7):623-628.
[10]Yin F,Hu W D,Zhang B,et al.Simulation of laser beam induced current for HgC dT e photodiodes with leakage current[J].Optical and Quantum Electronics,2009,41(11-13):805-810.
[11]Redfern D A,Musca C A,Dell J M,et al.Characterization of electrically active defects in photovoltaic detector arrays using laser beam-induced current[J].IEEE Transactions on Electron Devices,2005,52(10):2163-2174.
[12]Feng A L,Li G,He G,et al.The role of localized junction leakage in the temperature-dependent laser-beam-induced current spectra for HgC dT e infrared focal plane array photodiodes[J].Journal of Applied Physics,2013,114(17):173107.
[13]TANG Wei,GUO Jin,SHAO Jun-Feng,et al.Morphology and Chemical Composition Analysis on Multi-Pulsed CO2Laser Ablation of HgC dT e Crystals:International Symposium on photoelectronic Detection and imageing 2013:High Power Lasers And Applications,2013[C].Beijing:A Tunnermann;Z Liu;P Wang,et al.2013,8904.
[14]YIN Fei,HU Da-Wei,QUAN Zhi-Jue,et al.Determination of electron diffusion length in HgC dT e photodiodes using laser beam induced current[J].Acta Phys Sin(殷菲,胡伟达,全知觉,等.激光束诱导电流法提取HgC dT e光伏探测器的电子扩散长度.物理学报),2009,11(58):7884-7890.
[15]Redfern D A,Thomas J A,Musca C A,et al.Diffusion length measurements in p-HgC dT e using laser beam induced current[J].Journal of Electronic Materials,2001,30(6):696-703.