基于InGaAs盖革模式APD探测器的主动淬灭电路设计
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摘要
盖革模式(GM)雪崩光电二极管(APD)探测器具有单光子级探测灵敏度,可广泛用于三维成像和测量测绘等领域。针对InGaAs基GM-APD,提出一种用于自由模式探测的主动淬灭电路。该电路采用电容积分方式将雪崩电流转换为电压信号,利用反相器对其进行检测与提取,同时经淬灭支路将雪崩快速淬灭,一定延时后恢复支路使APD重新进入盖革状态;采用施密特触发器以增强淬灭支路的抗干扰能力,防止盖革恢复过程中导致淬灭控制信号的振荡;利用RC延迟电路实现探测器死时间可调。基于SMIC 0.18μm标准CMOS工艺对设计的主动淬灭电路进行了流片,电路芯片与GM-APD互连测试结果表明,该电路可实现对GM-APD的快速淬灭与恢复,淬灭时间约为887 ps,恢复时间约为325 ps,最小死时间约为29.8 ns,满足多回波探测应用要求。
With single-photon detection sensitivity, the Geiger-mode(GM) avalanche photodiode(APD) detector is widely used in 3 D imaging, surveying and mapping and other fields. Based on InGaAs GM-APD,an active quenching circuit for free-running mode detection was presented. The avalanche current was converted into a voltage signal by capacitance integrating, which was then detected and extracted by inverters. Simultaneously, the avalanche was quickly quenched by the quenching branch. After a delay, the APD was restored to the Geiger state by the restoration branch. Schmitt trigger was adopted to enhance the anti-interference ability of the quenching branch, preventing the quenching control signal from oscillating during the recovery to Geiger mode. Adjustment of detector's dead time was achieved by using the RC delay circuit. The proposed active quenching circuit was taped out based on SMIC 0.18 μm standard CMOS process. Tests and experiments were performed after the circuit chip was interconnected with GM-APD, showing that the circuit can realize rapid quenching and restoring for GM-APD with the quenching time of about 887 ps, the recovery time of about 325 ps and the minimal dead time of about 29.8 ns,meeting the requirements of multiple-echo detection application.
With single-photon detection sensitivity, the Geiger-mode(GM) avalanche photodiode(APD) detector is widely used in 3 D imaging, surveying and mapping and other fields. Based on InGaAs GM-APD,an active quenching circuit for free-running mode detection was presented. The avalanche current was converted into a voltage signal by capacitance integrating, which was then detected and extracted by inverters. Simultaneously, the avalanche was quickly quenched by the quenching branch. After a delay, the APD was restored to the Geiger state by the restoration branch. Schmitt trigger was adopted to enhance the anti-interference ability of the quenching branch, preventing the quenching control signal from oscillating during the recovery to Geiger mode. Adjustment of detector's dead time was achieved by using the RC delay circuit. The proposed active quenching circuit was taped out based on SMIC 0.18 μm standard CMOS process. Tests and experiments were performed after the circuit chip was interconnected with GM-APD, showing that the circuit can realize rapid quenching and restoring for GM-APD with the quenching time of about 887 ps, the recovery time of about 325 ps and the minimal dead time of about 29.8 ns,meeting the requirements of multiple-echo detection application.
引文
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[3] 陈效双,何家乐,李庆,等.中红外波段雪崩光子探测器研究进展[J].红外技术,2018,40(9):825-836.CHEN X S,HE J L,LI Q,et al.Research progress of mid-infrared avalanche photodiode detectors[J].Infrared Technology,2018,40(9):825-836(in Chinese).
[4] 白宗杰,陈世军,周扬.单光子雪崩二极管探测系统测试与设计分析[J].半导体技术,2010,35(8):775-779.BAI Z J,CHEN S J,ZHOU Y.Single photon avalanche diode detection system test and design analysis[J].Semiconductor Technology,2010,35(8):775-779(in Chinese).
[5] MA H Q,YANG J H,WEI K J,et al.Afterpulsing cha-racteristics of InGaAs/InP single photon avalanche diodes[J].Chinese Physics:B,2014,23(12):70-74.
[6] GALLIVANONI A,RECH I,GHIONI M.Progress in quenching circuits for single photon avalanche diodes[J].IEEE Transactions on Nuclear Science,2010,5 (6):3815-3826.
[7] VORNICU I,CARMONA-GALAN R,PEREZ-VERDU B,et al.Compact CMOS active quenching /recharge circuit for SPAD arrays[J].International Journal of Circuit Theory and Applications,2016,44(4):917-928.
[8] LIU J L,ZHANG T F,LI Y F,et al.Design and characterization of free-running InGaAsP single-photon detector with active-quenching technique[J].Journal of Applied Physics,2017,122(1):013104-1-013104-5.