基于硅基微结构高性能太赫兹波电控调制器
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摘要
通过硅基微结构与二氧化钒(VO_2)相变薄膜相结合,设计并实现了一种电控太赫兹幅度调制器件。该调制器具有很高的太赫兹波透射率与极低的器件插损,同时具有大的工作带宽和调制深度。仿真和实验测试结果表明,该调制器对太赫兹波的增透响应带宽为0.25～0.95 THz波段。在0.4～0.85 THz频段内(约450 GHz宽带)的透射率超过80%,相较于硅衬底的透射率增加了10%以上,且透射率最高可达85%。对该器件电调控后,调制深度可达76%以上,器件透射率变化幅度可达65%。因低插损、大调制幅度以及宽工作带宽,该太赫兹调制器在太赫兹成像和通信系统中具有重要的应用价值。
An electronically controlled terahertz amplitude modulation device is designed and implemented by integrating silicon-based microstructure with vanadium dioxide phase-change film. This device has a high transmittance of terahertz waves and very low insertion loss of the device, while having a large operating bandwidth and modulation depth. Simulation and experimental results show that the modulator's response bandwidth for the increased transmission effect of terahertz waves is 0.25-0.95 THz.The transmission of the modulator is over 80% in the frequency range of 0.4-0.85 THz, and compared with the transmission of high resistance silicon wafer, it is increased by over 10%. And the transmittance of the modulator can be up to 85%. After the device is electrically controlled, the modulation depth can reach more than 76%,and the change range of the modulator's transmittance can reach 65%. An important application value of the THz modulator is demonstrated in terahertz imaging and communication system,because of its low insertion loss, large modulation amplitude and wide working bandwidth.
An electronically controlled terahertz amplitude modulation device is designed and implemented by integrating silicon-based microstructure with vanadium dioxide phase-change film. This device has a high transmittance of terahertz waves and very low insertion loss of the device, while having a large operating bandwidth and modulation depth. Simulation and experimental results show that the modulator's response bandwidth for the increased transmission effect of terahertz waves is 0.25-0.95 THz.The transmission of the modulator is over 80% in the frequency range of 0.4-0.85 THz, and compared with the transmission of high resistance silicon wafer, it is increased by over 10%. And the transmittance of the modulator can be up to 85%. After the device is electrically controlled, the modulation depth can reach more than 76%,and the change range of the modulator's transmittance can reach 65%. An important application value of the THz modulator is demonstrated in terahertz imaging and communication system,because of its low insertion loss, large modulation amplitude and wide working bandwidth.
引文
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[2]SIEGEL P H.Terahertz technology[J].IEEE Transactions on Microwave Theory Techniques,2002,50(3):910-928.
[3]FEDERICI J F,SCHULKIN B,HUANG F,et al.THz imaging and sensing for security applications-explosives,weapons,and drugs[J].Semiconductor Science Technology,2005,20(7):S266-S280.
[4]ZHELUDEV N I,KIVSHAR Y S.From metamaterials to metadevices[J].Nature Materials,2012,11(11):917-924.
[5]LIU A Q,ZHU W M,TSAI D P,et al.Micromachined tunable metamaterials:a review[J].Journal of Optics,2012,14(11):114009.
[6]SAVINOV V,FEDOTOV V A,ANLAGE S M,et al.Modulating sub-THz radiation with current in superconducting metamaterial[J]Physical Review Letters,2012,109(24):3904-3908.
[7]WATTS C M,SHREKENHAMER D,MONTOYA J,et al.Terahertz compressive imaging with metamaterial spatial light modulators[J].Nature Photonics,2014,8(8):605-609.
[8]李少谦,陈智,文岐业,等.太赫兹通信技术导论[M].北京:国防工业出版社,2016.(LI Shaoqian,CHEN Zhi,WEN Qiye,et al.Terahertz communications technology[M].Beijing:National Defense Industry Press,2016.)
[9]MORIN F J.Oxides which show a metal-to-insulator transition at the Neel temperature[J].Physical Review Letters,19593(1):34-36.
[10]QIU Donghong,WEN Qiye,YANG Qinghui,et al.Electrically-driven metal-insulator transition of vanadium dioxide thin films in a metal-oxide-insulator-metal device structure[J].Materials Science in Semiconductor Processing,2014,27(1):140-144.
[11]XIONG Ying,WEN Qiye,CHEN Zhi,et al.Tuning the phase transitions of VO2 thin films on silicon substrates using ultrathin Al2O3 as buffer layers[J].Journal of Physics D:Applied Physics,2014,47(45):5304.
[12]WEN Qiye,ZHANG Huaiwu,YANG Qinghui,et al.A tunable hybrid metamaterial absorber based on vanadium oxide films[J].Journal of Physics D:Applied Physics,2012,45(23):5106.
[13]WEN Tianlong,ZHANG Chong,WEN Qiye,et al.Enhanced optical modulation depth of terahertz waves by self-assembled monolayer of plasmonic gold nanoparticles[C]//2016 41st International Conference on Infrared,Millimeter,and Terahertz waves(IRMMW-THz).Copenhagen,Denmark:IEEE,2016.doi:10.1109/IRMMW-THz.2016.7758773.
[14]WU B,ZIMMERS A,AUBIN H,et al.Electric-field-driven phase transition in vanadium dioxide[J].Physical Review B,2011,84(24):1410.
[15]KIM H T,KIM B J,CHOI S,et al.Electrical oscillations induced by the metal-insulator transition in VO2[J].Journal of Applied Physics,2010,107(6):069904.
[16]PENG Y,ZANG X F,ZHU Y M,et al.Ultra-broadband terahertz perfect absorber by exciting multi-order diffractions in a double-layered grating structure[J].Optics Express,2015,23(3):2032-2040.
[17]熊瑛.硅基二氧化钒薄膜制备及在太赫兹开关器件方面的应用[D].成都:电子科技大学,2015.(XIONG Ying.Preparation of silicon-based vanadium dioxide thin film and its application in terahertz switching devices[D].Chengdu,China:University of Electronic Science and Technology of China,2015.)
[18]FEPSEN P U,FISCHER B M,THOMAN A,et al.Metal-insulator phase transition in a VO2 thin film observed with terahertz spectroscopy[J].Physical Review B,2006,74(20):205103.
[19]NASHIMA S,MORIKAWA O,TAKATA K,et al.Measurement of optical properties of highly doped silicon by terahertz time domain reflection spectroscopy[J].Applied Physics Letters,2002,79(24):3923-3925.
[20]HAGGANS C W,LI L F,KOSTUK R K.Effective-medium theory of zeroth-order lamellar gratings in conical mountings[J].Journal of the Optical Society of America A,1993,10(10):2217-2225.
[21]PEI T H,THIYAGU S,PEI Z.Ultra high-density silicon nanowires for extremely low reflection in visible regime[J].Applied Physics Letters,2011,99(15):3108.
[22]WANG M,HU C,PU M,et al.Truncated spherical voids for nearly omnidirectional optical absorption[J].Optics Express,2011,19(21):20642-20650.
[23]WHITE K W.Permittivity of a multiphase and isotropic lattice of spheres at low frequency[J].Journal of Applied Physics,2000,88(4):1962.