Al_2O_3(0001)邻晶面上基底温度对PTCDI-C_5岛分布的影响（英文）
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摘要
在α-Al_2O_3(0001)表面研究了N,N'-二戊基-3,4,9,10-苝二甲酰亚胺(PTCDI-C_5)薄膜形貌与基底温度之间的关系.在背景真空度低于6×10-7Pa的超高真空腔中,利用分子束外延方法在基底上生长标称厚度为0.6 nm的PTCDI-C_5薄膜,薄膜生长过程中的基底温度分别被控制在25℃、37℃和61℃.生长结束后,利用原子力显微镜(AFM)轻敲模式在大气环境下对薄膜形貌进行离线表征.AFM图像显示在Al_2O_3基底表面,PTCDI-C_5分子形成岛,而且PTCDI-C_5岛的排列与基底温度之间呈现一定关系.本文实验条件下,在25℃和37℃之间存在一个基底温度阈值.在薄膜生长过程中,当基底温度低于此温度阈值时,PTCDI-C_5岛在基底表面随机排列;相反,当基底温度高于此温度阈值时,PTCDI-C_5岛沿着Al_2O_3(0001)表面的台阶边缘分布.
The morphologies of N,N'-dipenthyl-3,4,9,10-perylene tetracarboxylic diimide( PTCDI-C_5)thin films on the α-Al_2O_3( 0001) substrate were investigated as a function of substrate temperature. The PTCDI-C_5 thin films with a nominal thickness of 0. 6 nm were deposited on the substrate by molecular beam epitaxy in an ultrahigh vacuum chamber with a base pressure lower than 6 × 10-7 Pa. During deposition,the substrate temperature was controlled at 25 ℃,37 ℃,and 61 ℃,respectively. The morphologies of PTCDI-C_5 thin films were characterized ex-situ by atomic force microscope( AFM) in the tapping mode at room temperature. AFM images showed that the PTCDI-C_5 molecules formed islands on Al_2O_3 substrate,and the arrangement of PTCDI-C_5 islands showed dependence on the substrate temperature during deposition. Under our experimental conditions,a substrate temperature threshold between 25 ℃ and37 ℃ was observed. When the substrate temperature during deposition was lower than the temperature threshold,the PTCDI-C_5 islands randomly distributed on the surface. On the contrary,when the substrate temperature during deposition was higher than the temperature threshold,the PTCDI-C_5 islands aligned themselves along the step edges on the Al_2O_3( 0001) surface.
The morphologies of N,N'-dipenthyl-3,4,9,10-perylene tetracarboxylic diimide( PTCDI-C_5)thin films on the α-Al_2O_3( 0001) substrate were investigated as a function of substrate temperature. The PTCDI-C_5 thin films with a nominal thickness of 0. 6 nm were deposited on the substrate by molecular beam epitaxy in an ultrahigh vacuum chamber with a base pressure lower than 6 × 10-7 Pa. During deposition,the substrate temperature was controlled at 25 ℃,37 ℃,and 61 ℃,respectively. The morphologies of PTCDI-C_5 thin films were characterized ex-situ by atomic force microscope( AFM) in the tapping mode at room temperature. AFM images showed that the PTCDI-C_5 molecules formed islands on Al_2O_3 substrate,and the arrangement of PTCDI-C_5 islands showed dependence on the substrate temperature during deposition. Under our experimental conditions,a substrate temperature threshold between 25 ℃ and37 ℃ was observed. When the substrate temperature during deposition was lower than the temperature threshold,the PTCDI-C_5 islands randomly distributed on the surface. On the contrary,when the substrate temperature during deposition was higher than the temperature threshold,the PTCDI-C_5 islands aligned themselves along the step edges on the Al_2O_3( 0001) surface.
引文
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[3]Krauss T N,Barrena E,Zhang X N,et al.Three-dimensional molecular packing of thin organic films of PTCDI-C8determined by surface X-ray diffraction[J].Langmuir,2008,24(22):12742-12744.
[4]Newman C R,Frisbie C D,Filho D A d S,et al.Introduction to organic thin film transistors and design of n-channel organic semiconductors[J].Chem Mater,2004,16(23):4436-4451.
[5]Ling M M,Bao Z.Thin film deposition,patterning,and printing in organic thin film transistors[J].Chem Mater,2004,16(23):4824-4840.
[6]Ruiz R,Choudhary D,Nickel B,et al.Pentacene thin film growth[J].Chem Mater,2004,16(23):4497-4508.
[7]Koller G,Berkebile S,Krenn J,et al.Oriented sexiphenyl single crystal nanoneedles on Ti O2(110)[J].Adv Mater,2004,16(23/24):2159-2162.
[8]Sassella A,Campione M,Papagni A,et al.Strategies for two-dimensional growth of organic molecular films[J].JPhys Chem B,2006,325(1):193-206.
[9]Jones M L,Huang D M,Chakrabarti B,et al.Relating molecular morphology to charge mobility in semicrystalline conjugated polymers[J].J Phys Chem C,2016,120(8):4240-4250.
[10]Ribi8 P R,Bratina G.Initial stages of growth of organic semiconductors on vicinal(0001)sapphire surfaces[J].Surf Sci,2008,602(7):1368-1375.
[11]Ribi8 P R,Bratina G.Fabrication of rubrene nanowires on vicinal(0001)sapphire surfaces[J].Surf Sci,2007,601(5):25-28.
[12]Ribi8 P R,Bratina G.Influence of substrate morphology on growth mode of thin organic films:An atomic force microscopy study[J].J Vac Sci Technol B,2007,25(4):1152-1155.
[13]Chang M,Choi D,Egap E.Macroscopic alignment of onedimensional conjugated polymer nanocrystallites for highmobility organic field-effect transistors[J].ACS Appl Mater Interfaces,2016,8(21):13484-13491.
[14]Kim D H,Jang Y,Park Y D,et al.Controlled one-dimensional nanostructures in poly(3-hexylthiophene)thin film for high-performance organic field-effect transistors[J].J Phys Chem B,2006,110(32):15763-15768.
[15]Sung J,Zhang L,Tian C,et al.Effect of p H on the water/α-Al2O3(11-02)interface structure studied by sum-frequency vibrational spectroscopy[J].J Phys Chem C,2011,115(28):13887-13893.
[16]Petit M,Hayakawa R,Wakayama Y,et al.Early stage of growth of a perylene diimide derivative thin film growth on various Si(001)substrates[J].J Phys Chem C,2007,111(34):12747-12751.
[17]Ribi8 P R,Bratina G.Behavior of the(0001)surface of sapphire upon high-temperature annealing[J].Surf Sci,2007,601(1):44-49.
[18]Yoshimoto M,Maeda T,Ohnishi T,et al.Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication[J].Appl Phys Lett,1995,67(18):2615-2617.