近红外光谱仪InGaAs前端电路系统研究
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摘要
针对基于MEMS微镜的长波近红外光谱仪的具体参数要求,分析了InGaAs探测器的前端光电转换放大系统的设计原理和方法,设计并实现了该系统。系统主要由前置放大电路、Sallen-Key电路以及温控电路组成。仿真与实验结果表明:系统将光信号成功放大,且增益与带宽满足光谱仪要求,其中温控精度±0. 1℃,降低了暗电流的影响,提高了探测效率。研究工作涉及的原理与方法,对InGaAs探测器高灵敏、低噪声、低成本的光电转换与放大的实现具有指导与借鉴作用。
To meet the requirements of long wave near-infrared( NIR) spectrometer based on MEMS micromirror,theoretical principles and methods of designing In Ga As photoelectric conversion and amplification circuit system at front end were introduced. The circuit system was designed and implemented,which is mainly composed of a preamplifier circuit,a Sallen-Key filter circuit and a temperature control circuit. Both simulation and experimental results show that the circuit system successfully amplifies the optical signal with gain and bandwidth fitting the spectrometer requirements. The temperature control circuit achieved temperature accuracy of ± 0. 1 ℃,which reduced the influence of dark current and improved the efficiency of the detector. The principle and method are of guidance to the implementation of InGaAs photoelectric conversion and amplification circuit system with high sensitivity,low noise,and low cost.
To meet the requirements of long wave near-infrared( NIR) spectrometer based on MEMS micromirror,theoretical principles and methods of designing In Ga As photoelectric conversion and amplification circuit system at front end were introduced. The circuit system was designed and implemented,which is mainly composed of a preamplifier circuit,a Sallen-Key filter circuit and a temperature control circuit. Both simulation and experimental results show that the circuit system successfully amplifies the optical signal with gain and bandwidth fitting the spectrometer requirements. The temperature control circuit achieved temperature accuracy of ± 0. 1 ℃,which reduced the influence of dark current and improved the efficiency of the detector. The principle and method are of guidance to the implementation of InGaAs photoelectric conversion and amplification circuit system with high sensitivity,low noise,and low cost.
引文
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[2]黄艳飞,王志斌,王艳超,等.弹光调制光电转换放大电路设计[J].应用光学,2013,34(3):420-424.
[3] CAO G,TANG H,SHAO X,et al. The influence of thermal treatment on the passivation of Si Nx film and the dark current of p-i-n In Ga As detector[J]. Applied Optics and Photonics,China. 2015:967411.
[4] ZHANG Z,MIAO G,SONG H,et al. High in content In Ga As near-infrared detectors:growth,structural design and photovoltaic properties[J]. Applied Physics A,2017,123(4):219.
[5]盛兴,邓大鹏,廖晓闽,等.干涉型光纤扰动传感器信号调理电路的设计和仿真[J].现代电子技术,2011,34(4):144-146.
[6] HU K,ZHAO Y,YE M,et al. Design of a CMOS ROIC for In Ga As Self-mixing Detectors Used in FM/cw LADAR[J]. IEEE Sensors Journal,2017,(99):1-1.
[7]王晓光,钱小东,洪津,等. In Ga As多路偏振探测器高精度温控系统[J].电光与控制,2016(5):94-98.
[8]韩宇宏,杨树,马海强.量子通信中单光子探测器的实验研究[J].应用光学,2010,31(2):322-326.
[9]韩红霞,陈洪亮,潘晓东,等.高分辨率In Ga As短波红外成像系统[J].电光与控制,2013,20(2):66-69.
[10]叶坤涛,董太源,贺文熙,等.基于MEMS微镜的长波近红外光谱仪的设计与实现[J].光谱学与光谱分析,2014,34(10):2858-2862.
[11] JIN X,SU J,ZHENG Y,et al. Balanced homodyne detection with high common mode rejection ratio based on parameter compensation of two arbitrary photodiodes.[J]. Optics Express,2015,23(18):23859-23866.
[12]杨茂,胡立群,段艳敏,等.微弱光电流信号放大器的设计[J].核电子学与探测技术,2011,31(7):734-738.
[13]曹辉,杨一凤,刘尚波,等.用于光纤电流传感器SLD光源的温度控制系统[J].红外与激光工程,2014,43(3):920-926.