焦耳热效应、电击穿和应力对单根GaN纳米线I-V曲线的影响
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摘要
利用原位透射电子显微术,研究了单根GaN纳米线I-V曲线与热效应、电击穿和压电效应的关系.在透射电子显微镜内构建一个基于GaN纳米线的金属-半导体-金属结构,测量单根纳米线的I-V曲线.随着连续测量次数的增加,纳米线的温度升高,电流逐渐增加,且I-V曲线由最初的不对称逐渐变得近乎对称;纳米线在较低电压下长时间连续测量后被击穿,I-V曲线对测量次数不再敏感.将GaN纳米线压弯后,电流明显下降,压电效应明显.分析表明,单根纳米线测量时的时间间隔和接触应力情况等是I-V曲线变化的重要因素.本研究可为极性纳米线的原位电学性质研究提供实验参考.
In situ transmission electron microscopy(TEM) was used to study the relationship between the I-V curves of single GaN nanowires and thermal effects, electrical breakdown and piezoelectric effects. A metal-semiconductor-metal structure based on GaN nanowires was constructed in TEM to measure the I-V curves of single GaN nanowires. When the temperature is increased, the current is increased gradually, and the I-V curve becomes nearly symmetrical gradually from the initial asymmetry. The nanowires are broken down after a long time of continuous measurement at low voltage, and the I-V curve is no longer sensitive to the number of measurements. Time interval and contact stress are important factors for the variation of I-V curves. This study can provide experimental reference for the in-situ electrical properties of polar nanowires.
In situ transmission electron microscopy(TEM) was used to study the relationship between the I-V curves of single GaN nanowires and thermal effects, electrical breakdown and piezoelectric effects. A metal-semiconductor-metal structure based on GaN nanowires was constructed in TEM to measure the I-V curves of single GaN nanowires. When the temperature is increased, the current is increased gradually, and the I-V curve becomes nearly symmetrical gradually from the initial asymmetry. The nanowires are broken down after a long time of continuous measurement at low voltage, and the I-V curve is no longer sensitive to the number of measurements. Time interval and contact stress are important factors for the variation of I-V curves. This study can provide experimental reference for the in-situ electrical properties of polar nanowires.
引文
[1]LI X,GAN M,YANG Y,et al.Enhanced photovoltaic performance of photoanodes based on Eu-doped ZnO nanowire arrays for dye-sensitized solar cells[J].Solid State Electrochem,2015 (19):3059-3066.
[2]BIE Y Q,LIAO Z M,WANG P W,et al.Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes[J].Adv.Mater.,2010 (22):4284-4287.
[3]YU F,YAO S,R?MER F,et al.GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors[J].Nature Nanotech,2017 (28):095206.
[4]WU Y,HASAN T,LI X ,et al.High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes [J].Appl.Phys.Lett.,2015,106:051108.
[5]WENG W Y,HSUEH T J,CHANG S J ,et al.A High-Responsivity GaN Nanowire UV Photodetector[J].IEEE Journal of Selected Topics in Quantum Electronics,2011 (17):996-1001.
[6]ZHANG L,WANG S,SHAO Y,et al.One-step fabrication of porous GaN crystal membrane and its application in energy storage[J].Sci.Rep.,2017 (7) :44063.
[7]SCHUCHARDT A,BRANISTE T,MISHRA Y K,et al.Three-dimensional Aerographite-GaN hybrid networks:single step fabrication of porous and mechanically flexible materials for multifunctional applications[J].Sci.Rep.,2014 (5) :8839.
[8]WU Y H,LEE W.Hydrogen etch of GaN and its application to produce porous GaN caves[J].Proc Spie,2011,7939:750-755.
[9]ROSENBERG A,BUSSMANN K,KIM M ,et al.Fabrication of GaN suspended photonic crystal membranes and resonant nanocavities on Si(111) [J].Journal of vacuum science & technology,2007 (25) :721-724.
[10]ESPINOSA H D,BERNAL R A,JOLANDAN M M A.Review of Mechanical and Electromechanical Properties of Piezoelectric Nanowires[J].Adv.Mater.,2012 (24):4656-4675.
[11]RHODERICK E H,WILLIAMS R H.Metal-Semiconductor Contact[M].Clarendon:Oxiford,1988.
[12]ZHAO J,SUN H Y,DAI S ,et.al.Electrical Breakdown of Nanowires[J].Nano Letters,2011(11) :4647-4651.
[13]ZHAO J,JIA H Q,WEI F,et al.Mass Transportation Mechanism in Electric-Biased Carbon Nanotubes[J].Nano Letters,2010 (10) :4309-4315.
[14]HUANG X Y,ZHANG Z Y,LIU Y,et al.Analytical analysis of heat conduction in a suspended one-dimensional object[J].Applied Physics Letters,2009 ,95:143109.
[15]KIM T Y,KIM S W,KIM H,et al.Effects of acceptor dopants on the enhanced piezoelectric potential of ZnO nanowires:limiting free charge-carrier density through neutralizing donors[J].Journal of Computational Electronics,2014 (13):606-612.
[2]BIE Y Q,LIAO Z M,WANG P W,et al.Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes[J].Adv.Mater.,2010 (22):4284-4287.
[3]YU F,YAO S,R?MER F,et al.GaN nanowire arrays with nonpolar sidewalls for vertically integrated field-effect transistors[J].Nature Nanotech,2017 (28):095206.
[4]WU Y,HASAN T,LI X ,et al.High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes [J].Appl.Phys.Lett.,2015,106:051108.
[5]WENG W Y,HSUEH T J,CHANG S J ,et al.A High-Responsivity GaN Nanowire UV Photodetector[J].IEEE Journal of Selected Topics in Quantum Electronics,2011 (17):996-1001.
[6]ZHANG L,WANG S,SHAO Y,et al.One-step fabrication of porous GaN crystal membrane and its application in energy storage[J].Sci.Rep.,2017 (7) :44063.
[7]SCHUCHARDT A,BRANISTE T,MISHRA Y K,et al.Three-dimensional Aerographite-GaN hybrid networks:single step fabrication of porous and mechanically flexible materials for multifunctional applications[J].Sci.Rep.,2014 (5) :8839.
[8]WU Y H,LEE W.Hydrogen etch of GaN and its application to produce porous GaN caves[J].Proc Spie,2011,7939:750-755.
[9]ROSENBERG A,BUSSMANN K,KIM M ,et al.Fabrication of GaN suspended photonic crystal membranes and resonant nanocavities on Si(111) [J].Journal of vacuum science & technology,2007 (25) :721-724.
[10]ESPINOSA H D,BERNAL R A,JOLANDAN M M A.Review of Mechanical and Electromechanical Properties of Piezoelectric Nanowires[J].Adv.Mater.,2012 (24):4656-4675.
[11]RHODERICK E H,WILLIAMS R H.Metal-Semiconductor Contact[M].Clarendon:Oxiford,1988.
[12]ZHAO J,SUN H Y,DAI S ,et.al.Electrical Breakdown of Nanowires[J].Nano Letters,2011(11) :4647-4651.
[13]ZHAO J,JIA H Q,WEI F,et al.Mass Transportation Mechanism in Electric-Biased Carbon Nanotubes[J].Nano Letters,2010 (10) :4309-4315.
[14]HUANG X Y,ZHANG Z Y,LIU Y,et al.Analytical analysis of heat conduction in a suspended one-dimensional object[J].Applied Physics Letters,2009 ,95:143109.
[15]KIM T Y,KIM S W,KIM H,et al.Effects of acceptor dopants on the enhanced piezoelectric potential of ZnO nanowires:limiting free charge-carrier density through neutralizing donors[J].Journal of Computational Electronics,2014 (13):606-612.