摘要
近年来,压电薄膜在表面声波及压电器件等领域的应用得到了广泛关注和研究。有效横向压电系数(e_(31,f))是压电薄膜材料的一个重要性能指标,本工作重点研究xBiInO_3-(1-x)PbTiO_3薄膜的有效横向压电系数。在优化xBiInO_3-(1-x)PbTiO_3薄膜的基础上,通过多层悬臂梁研究xBiInO_3-(1-x)PbTiO_3薄膜的有效横向压电系数,当压电薄膜悬臂梁在交变电压作用下产生弯曲振动时,利用激光多普勒测振仪测量多层悬臂梁自由端的振动振幅,并根据悬臂梁法评估横向压电系数的基本原理,计算薄膜的有效横向压电系数,进而研究xBiInO_3-(1-x)PbTiO_3薄膜的横向压电性能。通过调控La的掺量,可优化压电薄膜的性能。
In recent years,the application of piezoelectric films in surface acoustic waves and piezoelectric devices has received extensive attention and research. This paper focuses on the transverse piezoelectric properties of La doping xBiInO_3-( 1-x)PbTiO_3 thin films. The effective transverse piezoelectricities of xBiInO_3-( 1-x)PbTiO_3 films were studied experimentally by multilayer cantilevers. Under the applied sinusoidal voltage,the tip vibration amplitudes of the xBiInO_3-( 1-x)PbTiO_3 multilayer cantilevers were measured experimentally by laser Doppler vibrometer,and the effective transverse piezoelectric coefficients of the films with different x and La doping can be evaluated according to the theory of Euler-Bernoulli cantilever and piezoelectric equations. Therefore,the optimized properties of the films can be obtained by properly controlling La doping contents.
引文
1 Khan A,Abas Z,Kim H S,et al. Smart Materials&Structures,2016,25(5),053002.
2 Yamada A,Maeda C,Uchikawa F,et al. Japanese Journal of Applied Physics,1999,38(9B),5520.
3 Wong C H,Dahari Z,Manaf A A,et al. Journal of Electronic Materials,2015,44(1),13.
4 Zhong C,Wang X,Fang J,et al. Journal of the American Ceramic Society,2010,93(10),3305.
5 Ko S W,Yeo H G,Troliermckinstry S. Applied Physics Letters,2009,95(16),299.
6 Sun Y L,Song W K,Lee S,et al. Applied Physics Letters,2012,100(21),299.
7 Sun K X,Zhang S Y,Wasa K,et al. Chinese Physics Letters,2016,33(6),064301.
8 Sun K X,Zhang S Y,Wasa K,et al. Physica Status Solidi A,2016,213(9),2479.
9 Sun K X,Zhang S Y,Wasa K. Chinese Physics Letters,2018,35(12),124301.
10 Li W,Li P,Zeng H,et al. Applied Physics Letters,2014,104(17),082903.
11 Wasa K,Adachi H,Nishida K,et al. IEEE Transactions on Ultrasonics,Ferroelectrics,and Frequency Control,2012,59(1),6.
12 Zhang T,Wasa K,Zhang S,et al. Applied Physics Letters,2009,94(12),042904.
13 Mino T,Kuwajima S,Suzuki T,et al. Japanese Journal of Applied Physics,2007,46,6960.
14 Cheng H,Ouyang J,Kanno I. Applied Physics Letters,2017,111(2),64.
15 Ren W,Zhou H J,Wu X Q,et al. Materials Letters,1997,31,185.
16 Verardi P,Craciun F,Dinescu M. Proceedings of the IEEE Ultrasonics Symposium,1997,1,569.
17 Dutta S,Jeyaseelan A A,Sruthi S. Thin Solid Films,2014,562(562),190.
18 Dekkers M,Boschker H,Van Zalk M,et al. Journal of Micromechanics&Microengineering,2012,23(2),025008.
19 Nguyen M D,Dekkers M,Houwman E P,et al. Materials Letters,2016,164,413.
20 Liu J M,Pan B,Chan H L W,et al. Materials Chemistry&Physics,2002,75(1-3),12.
21 Caruntu D I,Martinez I,Knecht M W. Journal of Sound&Vibration,2016,362,203.
22 Mazzalai A,Balma D,Chidambaram N,et al. Journal of Microelectromechanical Systems,2015,24(4),831.
23 Zhang J R,Zhang Y C,Lu C J,et al. Journal of Materials Science Materials in Electronics,2014,25(2),653.
24 Kaderoglu C,Surucu G,Erkisi A. Journal of Electronic Materials,2017,46(10),5827.
25 Kalinichev A G,Bass J D,Sun B N,et al. Journal of Materials Research,1997,12(10),2623.
26 Kashyap R,Lenka T R,Baishya S. IEEE Transactions on Electron Devices,2016,63(3),1281.
27 Kanda K,Kanno I,Kotera H,et al. Journal of Microelectromechanical Systems,2009,18(3),610.
28 Leist T,Jo W,Comyn T,et al. Japanese Journal of Applied Physics,2014,48(12),120205.