摘要
设计了一种适用于无源超高频(UHF)温度标签的超低功耗CMOS温度传感器电路。该电路利用衬底pnp晶体管产生随温度变化的电压信号,同时采用了逐次逼近寄存器(SAR)转换和Σ-Δ调制相结合的模拟数字转换方式。为了降低电源电压波动以及采样电容电荷泄漏对传感器测温精度的不利影响,提出了一种具有漏电保护机制的采样电路。基于0.18μm CMOS工艺设计实现了该传感器的电路和版图,其中版图面积为550μm×450μm,并利用Cadence Spectre仿真工具对电路进行了仿真。仿真结果表明,在-40~125℃,传感器的系统误差为-1.4~2.0℃,测温分辨率达到0.02℃;在1.2~2.6 V电源电压内,传感器输出温度波动小于0.3℃;在1.2 V电源电压下传感器电路(不含控制逻辑及数字滤波器)的功耗仅为2.4μW。
An ultra-low power CMOS temperature sensor circuit for the passive ultra-high frequency( UHF) temperature tag was designed. The temperature-dependent voltage signals were generated based on the substrate pnp transistor,and the analog-digital conversion method which combined successive approximation register( SAR) conversion and Σ-Δ modulation was used in the circuit. In order to reduce the negative effects of the supply voltage variation and charge leakage of the sampling capacitors on the temperature measurement accuracy of the temperature sensor,a sampling circuit with leakage protection mechanism was proposed. The sensor circuit and layout were designed and realized based on 0. 18 μm CMOS process,which was also simulated by Cadence Spectre. The layout area is 550 μm×450 μm. The simulation results show that the system error is-1. 4-2. 0 ℃ at-40 ~ 125 ℃ with a temperature measurement resolution of 0. 02 ℃. The maximum output temperature variation is less than 0. 3 ℃ at the supply voltage range from 1. 2 V to 2. 6 V,and the power consumption of the sensor circuit( excluding the control logic and digital filter) is only 2. 4 μW at the supply voltage of 1. 2 V.
引文
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