CMOS图像传感器光导通路的工艺开发
|
摘要
开发了CMOS图像传感器的光导通路工艺。通过使用优化的沟槽刻蚀工艺和光导通路线宽,在保持暗电流不变的情况下大幅提升了像素单元的灵敏度。研究发现,光导通路线宽直接影响暗电流的大小,线宽过大造成的金属玷污直接影响像素单元的暗电流。综合考虑灵敏度、暗电流和工艺偏差,光导通路线宽设置为4μm,其在保证暗电流不增加的情况下提升30%左右的灵敏度。
In this paper, the light pipe technology of CMOS image sensor has been successfully developed. By using the optimized trench etching technology and the critical dimension of the light pipe,the sensitivity of pixel unit is greatly improved while the dark current remains unchanged. Through the study we found that the critical dimension of the light pipe directly affects the dark current, wider width of the light pipe will lead to metal contamination and directly affects the dark current of pixel. Considering the sensitivity, dark current and process deviation, the line width of the photoconductive path is set to 4μm, which improves the sensitivity by about 30% without increasing dark current.
In this paper, the light pipe technology of CMOS image sensor has been successfully developed. By using the optimized trench etching technology and the critical dimension of the light pipe,the sensitivity of pixel unit is greatly improved while the dark current remains unchanged. Through the study we found that the critical dimension of the light pipe directly affects the dark current, wider width of the light pipe will lead to metal contamination and directly affects the dark current of pixel. Considering the sensitivity, dark current and process deviation, the line width of the photoconductive path is set to 4μm, which improves the sensitivity by about 30% without increasing dark current.
引文
[1]H.-S.WONG.Technology and device scaling considerations for CMOS imagers[J].IEEETransactions on Electron Devices,1996,43(12):2131-2142.
[2]Abbas El Gamal and Helmy Eltoukhy.CMOSimage sensors[J].IEEE circuit&devices magazine,2005,21(3):6-20.
[3]Chung-Yu WU,Yu-Chuan Shih,Jeng-Feng LAN,Chih-Cheng Hsieh,Chien-Chang HUANG,Jr-Houng LU.Design,Optimization,and Performance Analysis of New Photodiode Structures for CMOS Active-Pixel-Sensor(APS)Imager Applications[J].IEEE SENSORS JOURNAL,2004,4(1):135-144.
[4]Albert J.P.Theuwissen CMO Simage sensors:State-of-the-art[J].Solid-State Electronics,2008,52:1401-1406.
[5]Greenhouse H M.Design of planar rectangular microelectronic inductors.IEEE Trans Parts Hybrids Packag[J].IEEE Transactions on Parts Hybrids&Packaging,1974,10(2):101-109.
[6]Jun Ohta.Smart CMOS Image Sensors and Application[M].USA:Taylor&Francis Group,2008.
[2]Abbas El Gamal and Helmy Eltoukhy.CMOSimage sensors[J].IEEE circuit&devices magazine,2005,21(3):6-20.
[3]Chung-Yu WU,Yu-Chuan Shih,Jeng-Feng LAN,Chih-Cheng Hsieh,Chien-Chang HUANG,Jr-Houng LU.Design,Optimization,and Performance Analysis of New Photodiode Structures for CMOS Active-Pixel-Sensor(APS)Imager Applications[J].IEEE SENSORS JOURNAL,2004,4(1):135-144.
[4]Albert J.P.Theuwissen CMO Simage sensors:State-of-the-art[J].Solid-State Electronics,2008,52:1401-1406.
[5]Greenhouse H M.Design of planar rectangular microelectronic inductors.IEEE Trans Parts Hybrids Packag[J].IEEE Transactions on Parts Hybrids&Packaging,1974,10(2):101-109.
[6]Jun Ohta.Smart CMOS Image Sensors and Application[M].USA:Taylor&Francis Group,2008.