衬底温度对直流反应磁控溅射TiN电极薄膜显微结构及导电性能的影响
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摘要
二氧化铪基新型铁电薄膜器件等研究提出了在低衬底温度下制备高导电性和低表面粗糙度纳米超薄TiN电极薄膜的迫切需求。利用直流反应磁控溅射方法在单晶硅基片上制备TiN薄膜,衬底温度范围从室温~350℃,以XPS、XRD、AFM以及XRR等为主要手段对薄膜样品的成分、物相、表面粗糙度以及厚度和密度等进行了表征分析。结果表明在350℃的较低衬底温度下,通过减少溅射沉积时间可获得厚度<30nm的高导电性TiN电极薄膜。
In the study of hafnium oxide based new-type ferroelectric thin films devices,it is required to deposit TiN ultra-thin electrode films with high conductivity and low surface roughness at low temperature.In this work,TiN thin film were prepared by DC reactive magnetron sputtering on silicon substrates with the deposition temperature changed from room temperature to 350 ℃.The composition,crystalline structure,surface roughness,thickness and density of the films were characterized by XPS,XRD,AFM,and XRR methods.It was found that,by reducing the deposition time,TiN electrode thin films with the thickness less than 30 nm and high conductivity can be successfully fabricate at the relatively low deposition temperature of 350 ℃.
In the study of hafnium oxide based new-type ferroelectric thin films devices,it is required to deposit TiN ultra-thin electrode films with high conductivity and low surface roughness at low temperature.In this work,TiN thin film were prepared by DC reactive magnetron sputtering on silicon substrates with the deposition temperature changed from room temperature to 350 ℃.The composition,crystalline structure,surface roughness,thickness and density of the films were characterized by XPS,XRD,AFM,and XRR methods.It was found that,by reducing the deposition time,TiN electrode thin films with the thickness less than 30 nm and high conductivity can be successfully fabricate at the relatively low deposition temperature of 350 ℃.
引文
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[16]Liang H,Xu J,Zhou D,et al.Thickness dependent microstructural and electrical properties of TiN thin films prepared by DC reactive magnetron sputtering[J].Ceramics International,2016,42(2):2642-2647.
[17]Zhao Haikuo,Luo Xiangdong.Surface morphology evolution of tin thin films characterized by fractal methods[J].Semiconductor Technology,2008,33(8):694-697.赵海阔,雒向东.TiN薄膜表面形貌的分形表征及其演化特征[J].半导体技术,2008,33(8):694-697.
[2]Mueller S,Mueller J,Singh A,et al.Incipient ferroelectricity in Al-doped HfO2thin films[J].Advanced Functional Materials,2012,22(11):2412-2417.
[3]Müller J,Schr9der U,B9scke T S,et al.Ferroelectricity in yttrium-doped hafnium oxide[J].Journal of Applied Physics,2011,110(11):114-113.
[4]Mueller S,Adelmann C,Singh A,et al.Ferroelectricity in Gd-doped HfO2 thin films[J].ECS Journal of Solid State Science and Technology,2012,1(6):N123-N126.
[5]Schenk T,Mueller S,Schroeder U,et al.Strontium doped hafnium oxide thin films:wide process window for ferroelectric memories[C]//USA:Solid-state Device Research Conference,IEEE,2013.
[6]Müller J,B9scke T S,Bruhaus D,et al.Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications[J].Applied Physics Letters,2011,99(11):112901.
[7]Lomenzo P D,Zhao P,Takmeel Q,et al.Ferroelectric phenomena in Si-doped HfO2thin films with TiN and Ir electrodes[J].Journal of Vacuum Science&Technology B:Microelectronics and Nanometer Structures,2014,32(3):3D-123D.
[8]Ushakov S V,Navrotsky A,Yang Y,et al.Crystallization in hafnia-and zirconia-based systems[J].Physica Status Solidi(b),2004,241(10):2268-2278.
[9]Piscanec S,Colombi Ciacchi L,Vesselli E,et al.Bioactivity of TiN-coated titanium implants[J].Acta Materialia,2004,52(5):1237-1245.
[10]White N,Campbell A L,Grant J T,et al.Surface/interface analysis and optical properties of RF sputter-deposited nanocrystalline titanium nitride thin films[J].Applied Surface Science,2014,292:74-85.
[11]Oh U C,Je J H.Effects of strain energy on the preferred orientation of TiN thin films[J].Journal of Applied Physics,1993,74(3):1692-1696.
[12]Chawla V,Jayaganthan R,Chandra R.Structural characterizations of magnetron sputtered nanocrystalline TiN thin films[J].Materials Characterization,2008,59(8):1015-1020.
[13]Hahn B H,Jun J H,Joo J H.Plasma conditions for the deposition of TiN by biased activated reactive evaporation and dependence of the resistivity on preferred orientation[J].Thin Solid Films,1987,153(1):115-122.
[14]Meng L,Santos M P D.Characterization of titanium nitride films prepared by d.c.reactive magnetron sputtering at different nitrogen pressures[J].Surface and Coatings Technology,1997,90(1-2):64-70.
[15]Lal K,Meikap A K,Chattopadhyay S K,et al.Electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition[J].Physica B:Condensed Matter,2001,307(1-4):150-157.
[16]Liang H,Xu J,Zhou D,et al.Thickness dependent microstructural and electrical properties of TiN thin films prepared by DC reactive magnetron sputtering[J].Ceramics International,2016,42(2):2642-2647.
[17]Zhao Haikuo,Luo Xiangdong.Surface morphology evolution of tin thin films characterized by fractal methods[J].Semiconductor Technology,2008,33(8):694-697.赵海阔,雒向东.TiN薄膜表面形貌的分形表征及其演化特征[J].半导体技术,2008,33(8):694-697.