以色列SCD公司的Ⅲ-Ⅴ族红外探测器研究进展
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摘要
Ⅲ-Ⅴ族半导体在第三代红外探测器中扮演了重要的角色,近年来越来越受到人们的瞩目,特别是InAs/GaSb二类超晶格已经成为除碲镉汞外最受关注的红外探测器材料。本文简要回顾了以色列SCD公司在Ⅲ-Ⅴ族红外探测器的研究历程。重点总结了SCD关于InAs SbnBn中波高温探测器和InAs/GaSb二类超晶格pBp长波探测器中的研发。
Recently, Ⅲ-Ⅴ semiconductors played an important role in Generation Ⅲ infrared detectors and drew much research attention. Specifically, InAs/GaSb superlattices have become the most popular infrared detector material besides HgCdTe. This report briefly reviews Ⅲ-Ⅴ semiconductor infrared detector research in SCD, Israel. Specifically, we summarize the development of the InAsSb nBn MWIR HOT and InAs/GaSb type II superlattice pBp LWIR detectors.
Recently, Ⅲ-Ⅴ semiconductors played an important role in Generation Ⅲ infrared detectors and drew much research attention. Specifically, InAs/GaSb superlattices have become the most popular infrared detector material besides HgCdTe. This report briefly reviews Ⅲ-Ⅴ semiconductor infrared detector research in SCD, Israel. Specifically, we summarize the development of the InAsSb nBn MWIR HOT and InAs/GaSb type II superlattice pBp LWIR detectors.
引文
[1]Philip Klipstein.“XBn”barrier photo detectors for high sensitivity and high operating temperature infrared sensors[C]//Proc.of SPIE,2008,6940:69402U.
[2]Klipstein P C.Depletionless Photodiode with Suppressed Dark Current and Method for Producing the Same:US 7795640[P].2003-07-02.
[3]Klipstein P C.Unipolar semiconductor photodetector with suppressed dark current and method for producing the same:US 8,004,012[P].2010-10-11.
[4]Klipstein P C,Klin O,Grossman S,et al."XBn"Barrier detectors for high operating temperatures[C]//Proc.of SPIE,2010,7608:76081V.
[5]Klipstein P C,Klin O,Grossman S,et al.MWIR InAsSb XBn detectors for high operating temperatures[C]//Proc.of SPIE,2010,7660:76602Y.
[6]Klipstein P C,Klin O,Grossman S,et al.MWIR InAsSb XBnn detector(bariode)arrays operating at 150 K[C]//Proc.of SPIE,2011,8012:80122R.
[7]Klipstein P C,O.Klin,S.Grossman,et al.High operating temperature XBn-InAsSb bariode detectors[C]//Proc.of SPIE,2012,8068:80680U.
[8]Shtrichman I,Aronov D,Ezra M B,et al.High operating temperature epi-InSb and XBn-InAsSb photodetectors[C]//Proc.of SPIE,2012,8353:83532Y.
[9]Klipstein P C,Gross Y,Aronov D,et al.Low SWaP MWIR detector based on XBn focal plane array[C]//Proc.of SPIE,2013,8704:87041S.
[10]Karni Y,Aronov E,Ezra M B,et al.Large format 15?m pitch XBn detector[C]//Proc.of SPIE,2014,9070:90701F.
[11]Klipstein P C,Avnon E,Benny Y,et al.InAs/GaSb Type II superlattice barrier devices with a low dark current and a high quantum efficiency[C]//Proc.of SPIE,2014,9070:90700U.
[12]Klipstein P C.Operator ordering and interface-band mixing in the Kane-like hamiltonian of lattice-matched semiconductor superlattices with abrupt interfaces[J].Phys.Rev.B,2010,81:235314.
[13]Klipstein P C,Livneh Y,Klin O,et al.A k_p model of InAs/GaSb type II superlattice infrared detectors[J].Infrared Phys.Tech.,2013,59:53.
[14]Klipstein P C,Avnon E,Benny Y,et al.Type-II superlattice detector for long-wave infrared imaging[C]//Proc.of SPIE,2015,9451:94510K.
[15]Rehm R,Walther M,Rutz F,et al.Dual-color InAs/GaSb superlattice focal-plane array technology[J].J.Electron.Mater.,2011,40:1738.
[16]Gunapala S D,Ting D Z,Hill C J,et al.Demonstration of a 1024×1024pixel InAs-GaSb superlattice focal plane array[J].Phot.Tech.Lett.,2010,22:1856.
[17]Manurkar P,Ramezani-Darvish S,Nguyen B-M,et al.High performance long wavelength infrared mega-pixel focal plane array based on type-IIsuperlattices[J].Appl.Phys.Lett.,2010,97:1935051-1.
[18]Sundaram M,Reisinger A,Dennis R,et al.1024×1024 LWIR SLSFPAs-status and characterization[C]//Proc.of SPIE,2012,8353:83530W.
[2]Klipstein P C.Depletionless Photodiode with Suppressed Dark Current and Method for Producing the Same:US 7795640[P].2003-07-02.
[3]Klipstein P C.Unipolar semiconductor photodetector with suppressed dark current and method for producing the same:US 8,004,012[P].2010-10-11.
[4]Klipstein P C,Klin O,Grossman S,et al."XBn"Barrier detectors for high operating temperatures[C]//Proc.of SPIE,2010,7608:76081V.
[5]Klipstein P C,Klin O,Grossman S,et al.MWIR InAsSb XBn detectors for high operating temperatures[C]//Proc.of SPIE,2010,7660:76602Y.
[6]Klipstein P C,Klin O,Grossman S,et al.MWIR InAsSb XBnn detector(bariode)arrays operating at 150 K[C]//Proc.of SPIE,2011,8012:80122R.
[7]Klipstein P C,O.Klin,S.Grossman,et al.High operating temperature XBn-InAsSb bariode detectors[C]//Proc.of SPIE,2012,8068:80680U.
[8]Shtrichman I,Aronov D,Ezra M B,et al.High operating temperature epi-InSb and XBn-InAsSb photodetectors[C]//Proc.of SPIE,2012,8353:83532Y.
[9]Klipstein P C,Gross Y,Aronov D,et al.Low SWaP MWIR detector based on XBn focal plane array[C]//Proc.of SPIE,2013,8704:87041S.
[10]Karni Y,Aronov E,Ezra M B,et al.Large format 15?m pitch XBn detector[C]//Proc.of SPIE,2014,9070:90701F.
[11]Klipstein P C,Avnon E,Benny Y,et al.InAs/GaSb Type II superlattice barrier devices with a low dark current and a high quantum efficiency[C]//Proc.of SPIE,2014,9070:90700U.
[12]Klipstein P C.Operator ordering and interface-band mixing in the Kane-like hamiltonian of lattice-matched semiconductor superlattices with abrupt interfaces[J].Phys.Rev.B,2010,81:235314.
[13]Klipstein P C,Livneh Y,Klin O,et al.A k_p model of InAs/GaSb type II superlattice infrared detectors[J].Infrared Phys.Tech.,2013,59:53.
[14]Klipstein P C,Avnon E,Benny Y,et al.Type-II superlattice detector for long-wave infrared imaging[C]//Proc.of SPIE,2015,9451:94510K.
[15]Rehm R,Walther M,Rutz F,et al.Dual-color InAs/GaSb superlattice focal-plane array technology[J].J.Electron.Mater.,2011,40:1738.
[16]Gunapala S D,Ting D Z,Hill C J,et al.Demonstration of a 1024×1024pixel InAs-GaSb superlattice focal plane array[J].Phot.Tech.Lett.,2010,22:1856.
[17]Manurkar P,Ramezani-Darvish S,Nguyen B-M,et al.High performance long wavelength infrared mega-pixel focal plane array based on type-IIsuperlattices[J].Appl.Phys.Lett.,2010,97:1935051-1.
[18]Sundaram M,Reisinger A,Dennis R,et al.1024×1024 LWIR SLSFPAs-status and characterization[C]//Proc.of SPIE,2012,8353:83530W.