总剂量效应对CMOS读出电路影响及设计加固方法研究
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摘要
总剂量效应会对CMOS读出电路的性能产生明显的影响,甚至使CMOS读出电路功能完全失效。本文主要分析了总剂量效应对NMOS器件阈值、漏电流和器件间漏电流的影响机理。随后,针对640×512 CMOS读出电路提出了可行的抗辐照版图设计方法。总剂量试验表明,采用环栅结构、环源结构的640×512读出电路芯片抗总剂量能力可以达到100 krad(Si)以上。
Total dose effects can affect obviously ROIC′s performance and even make its function fail.Frist,the mechanism of total dose effect on the threshold,leakage current and inter-device leakage current of NMOS devices is analyzed.Then,the hardening radiation design methods for 640×512 ROIC chip is proposed.Total ionizing dose experiment shows that the ROIC's radiation tolerance,using enclosed gate geometry and ringed-source geometry,is beyond 100 krad(Si).
Total dose effects can affect obviously ROIC′s performance and even make its function fail.Frist,the mechanism of total dose effect on the threshold,leakage current and inter-device leakage current of NMOS devices is analyzed.Then,the hardening radiation design methods for 640×512 ROIC chip is proposed.Total ionizing dose experiment shows that the ROIC's radiation tolerance,using enclosed gate geometry and ringed-source geometry,is beyond 100 krad(Si).
引文
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[2] Anelli G,Gampbeu M,Delmastro M,et al.Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments:practical design aspects[J].IEEE Transactions on Nuclear Science,1999,46(6):1690-1696.
[3] LI Jingguo.Infrared focal plane array signal readout and process technology[J].Laser & Infrared,2018,48(4):519-523.(in Chinese)李敬国.红外焦平面信号读出及处理技术[J].激光与红外,2018,48(4):519-523.
[4] Lacoe,Ronald C.Improving integrated circuit performance through the application of hardness-by-design methodology[J].IEEE Trans.Nucl.Sci.,2008,55(4):1903-1925.
[5] Nowlin N ,Bailey J,Turfler B,et al.A total dose hardening by design approach for high speed mixed signal CMOS integrated circuits[J].International Journal of High Speed Electronics and Systems,2014,14(2):367-378.
[6] Gromov V,Annema A J,Kluit R,et al.A radiation hard bandgap reference circuit in a standard 0.13 μm CMOS technology[J].IEEE Trans.Nucl.Sci.,2008,54(6):2727-2733.