CdTe/ZnS双层钝化碲镉汞长波探测器制备的研究
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摘要
开展了Cd Te/Zn S双层钝化碲镉汞长波探测器制备的研究。Cd Te钝化膜经退火热处理后,可实现Cd Te/MCT界面的互扩散,并改善Cd Te钝化膜的质量。通过全湿法腐蚀方法完成了金属化开口,制备了长波碲镉汞600×18@15μm规格线列和640×512@15μm规格面阵。线列I-V测试表明:Cd Te/Zn S双层钝化膜能有效地减少长波碲镉汞器件的表面漏电流,器件的反向结特性良好。面阵在77K测试:NETD 26.7 m K,有效像元率95.4%,并对室温目标进行了凝视成像。测试过程出现了4%左右由噪声引起的零散盲元,是由芯片面阵局部钝化失效引起的,表明钝化膜沉积工艺及芯片加工工艺尚有改进的空间。
The long-wave Hg Cd Te detector infrared with Cd Te/Zn S composite passivation films is prepared. After the Cd Te passivation film was annealed,Cd Te and MCT was diffused with each other in the interface,and the quality of Cd Te passivation film was improved. Based on the wet etching technology,600 × 18@ 15μm linear-array and 640 ×512 @ 15 μm focal plane array long wavelength Hg Cd Te device were prepared,respectively. After the I-V test of linear-array was completed,Cd Te/Zn S composite passivation films can effectively reduce the surface leakage current of long-wave Hg Cd Te device,and the performance of reverse current was good. After the focal plane array( FPA) was tested at the temperature of 77 K,the NETD was 26. 7 m K,the effective pixel rate of FPA was 95. 4%,and the target was imaged at room temperature. During the test process,there are about 4% blind pixels caused by noise,and the noise was caused by the partial passivation invalidation,which shows that the deposit of passivation films and the preparation of FPA technology can be improved in future.
The long-wave Hg Cd Te detector infrared with Cd Te/Zn S composite passivation films is prepared. After the Cd Te passivation film was annealed,Cd Te and MCT was diffused with each other in the interface,and the quality of Cd Te passivation film was improved. Based on the wet etching technology,600 × 18@ 15μm linear-array and 640 ×512 @ 15 μm focal plane array long wavelength Hg Cd Te device were prepared,respectively. After the I-V test of linear-array was completed,Cd Te/Zn S composite passivation films can effectively reduce the surface leakage current of long-wave Hg Cd Te device,and the performance of reverse current was good. After the focal plane array( FPA) was tested at the temperature of 77 K,the NETD was 26. 7 m K,the effective pixel rate of FPA was 95. 4%,and the target was imaged at room temperature. During the test process,there are about 4% blind pixels caused by noise,and the noise was caused by the partial passivation invalidation,which shows that the deposit of passivation films and the preparation of FPA technology can be improved in future.
引文
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[11]YE Zhenhua,HUANG Jian,YIN Wenting,et al.Hg Cd Te photodiode arrays passivated by MBE in-situ grow Cd Te film[J].J.Infrared Millim.Waves,2011,30(6):495-498.(in Chinese)叶振华,黄建,尹文婷,等.MBE原位碲化镉钝化的碲镉汞长波光电二极管阵列[J].红外与毫米波学报,2011,30(6):495-498.
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[13]LI Xiongjun,HAN Fuzhong,LI Dongsheng,et al.Study of Cd Te/Zn S composite passivation layer effect on the performance of LW Hg Cd Te device[J].Infrared and Laser Engineering,2016,45(9):1-7.(in Chinese)李雄军,韩福忠,李东升,等.Cd Te/Zn S复合钝化层对长波碲镉汞器件性能的影响研究[J].红外与激光工程,2016,45(9):1-7.
[2]Zanarimi M,Chirco P,Dusi W,et al.Radiation damage induced by 2Me V protons in Cd Te and Cd Zn Te Semiconductor detectors[J].Nucl.instrum.Methods Phys.Res.,2004,213:315-320.
[3]Wagenaar D J,Chowhury S,Engdahl J C,et al.Plannar image quality comparison between a Cd Zn Te prototypy and a standard Na I(Tl)gamma camera[J].Nucl.Instrum,Methods Phys.Res.2003,505(1-2):568-598.
[4]YANG Jianrong.Physics and technology of Hg Cd Te materials[M].Beijing:National Defense Industry Press,2012.(in Chinese)杨建荣.碲镉汞材料物理与技术[M].北京:国防工业出版社,2012.
[5]WANG Yifeng,LIU Liming,SUN Xiangle,et al.Research progress of surface passivation of mercury cadmium telluride materials[J].Infrared,2012,33(3):1-8.(in Chinese)王忆峰,刘黎明,孙祥乐等.碲镉汞材料表面钝化研究的发展(上)[J].红外,2012,33(3):1-8.
[6]WANG Yifeng,LIU Liming,SUN Xiangle,et al.Research progress of surface passivation of mercury cadmium telluride materials[J].Infrared,2012,33(4):7-13.(in Chinese)王忆峰,刘黎明,孙祥乐等.碲镉汞材料表面钝化研究的发展(下)[J].红外,2012,33(4):7-13.
[7]Yuan Haoxin,Tong Feiming,Tang Dingyuan.Electrical properties of p-type Hg Cd Te/Zn S interfaces[J].Optical Engineering,1993,32:608-612.
[8]Zhang X C,Zheng G Z,Guo S L,et al.Interface electrical characteristics of passivation films on Hg Cd Te[C]//Proc.of SPIE,1998,3175:183-185.
[9]Kim Jin-Sang,Song Jong-Hyung,Su Sang-Hee.Electrical properties of Zn S,Cd Te/Hg Cd Te interfaces evaporated from effusion cell in UHV chamber[C]//Proc.of SPIE,2000,4130:816-822.
[10]LI Xiongjun,HAN Fuzhong,LI Dongsheng,et al.Variable-area diodes with LW Hg Cd Te[J].J.Infrared Millim.Waves,2016,35(4):412-417.(in Chinese)李雄军,韩福忠,李东升,等.长波碲镉汞变面积二极管器件[J].红外与毫米波学报,2016,35(4):412-417.
[11]YE Zhenhua,HUANG Jian,YIN Wenting,et al.Hg Cd Te photodiode arrays passivated by MBE in-situ grow Cd Te film[J].J.Infrared Millim.Waves,2011,30(6):495-498.(in Chinese)叶振华,黄建,尹文婷,等.MBE原位碲化镉钝化的碲镉汞长波光电二极管阵列[J].红外与毫米波学报,2011,30(6):495-498.
[12]XU Jingjie,CHEN Xiongguo,ZHOU Songmin,et al.Advanced Cd Te passivation layer deposited by evaporation on Hg Cd Te infrared detectors[J].Laser&Infrared,2012,42(11):1263-1267.(in Chinese)徐竟杰,陈兴国,周松敏,等.Hg Cd Te红外探测器Cd Te钝化蒸发生长改进[J].激光与红外,2012,42(11):1263-1267.
[13]LI Xiongjun,HAN Fuzhong,LI Dongsheng,et al.Study of Cd Te/Zn S composite passivation layer effect on the performance of LW Hg Cd Te device[J].Infrared and Laser Engineering,2016,45(9):1-7.(in Chinese)李雄军,韩福忠,李东升,等.Cd Te/Zn S复合钝化层对长波碲镉汞器件性能的影响研究[J].红外与激光工程,2016,45(9):1-7.