摘要
开展了Cd Te/Zn S双层钝化碲镉汞长波探测器制备的研究。Cd Te钝化膜经退火热处理后,可实现Cd Te/MCT界面的互扩散,并改善Cd Te钝化膜的质量。通过全湿法腐蚀方法完成了金属化开口,制备了长波碲镉汞600×18@15μm规格线列和640×512@15μm规格面阵。线列I-V测试表明:Cd Te/Zn S双层钝化膜能有效地减少长波碲镉汞器件的表面漏电流,器件的反向结特性良好。面阵在77K测试:NETD 26.7 m K,有效像元率95.4%,并对室温目标进行了凝视成像。测试过程出现了4%左右由噪声引起的零散盲元,是由芯片面阵局部钝化失效引起的,表明钝化膜沉积工艺及芯片加工工艺尚有改进的空间。
The long-wave Hg Cd Te detector infrared with Cd Te/Zn S composite passivation films is prepared. After the Cd Te passivation film was annealed,Cd Te and MCT was diffused with each other in the interface,and the quality of Cd Te passivation film was improved. Based on the wet etching technology,600 × 18@ 15μm linear-array and 640 ×512 @ 15 μm focal plane array long wavelength Hg Cd Te device were prepared,respectively. After the I-V test of linear-array was completed,Cd Te/Zn S composite passivation films can effectively reduce the surface leakage current of long-wave Hg Cd Te device,and the performance of reverse current was good. After the focal plane array( FPA) was tested at the temperature of 77 K,the NETD was 26. 7 m K,the effective pixel rate of FPA was 95. 4%,and the target was imaged at room temperature. During the test process,there are about 4% blind pixels caused by noise,and the noise was caused by the partial passivation invalidation,which shows that the deposit of passivation films and the preparation of FPA technology can be improved in future.
引文
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