硫化退火温度对金属三靶顺序溅射CZTS薄膜性能的影响
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摘要
通过XRD及Raman物相分析、SEM形貌观察和EDS成分分析等方法研究了硫化退火温度对金属三靶顺序溅射铜锌锡硫(CZTS)薄膜性能的影响。结果表明,在一定温度范围内(500~580℃),随着温度的升高薄膜的结晶性能有变好的趋势,形貌也得到了改善。当温度达到600℃时,CZTS薄膜会发生分解反应,该分解反应不但导致薄膜结晶性能及形貌恶化,也造成了锡元素的损失。580℃条件下获得的薄膜各项性能俱佳,是最适合本实验体系的退火温度。
The effects of temperature of sulfide annealing on properties of CZTS thin films based on sequential sputtering from three metal targets were systematically studied by XRD,Raman,SEM,and EDS.The results show that crystallization and morphology of film are enhanced with increase of annealing temperature from 500 ℃ to 580 ℃,but decomposition reaction of CZTS film occurs at 600 ℃,which not only deteriorates crystallization and morphology of film,but also cause losing of Sn element.The optimum sulfide annealing temperature is 580 ℃.
The effects of temperature of sulfide annealing on properties of CZTS thin films based on sequential sputtering from three metal targets were systematically studied by XRD,Raman,SEM,and EDS.The results show that crystallization and morphology of film are enhanced with increase of annealing temperature from 500 ℃ to 580 ℃,but decomposition reaction of CZTS film occurs at 600 ℃,which not only deteriorates crystallization and morphology of film,but also cause losing of Sn element.The optimum sulfide annealing temperature is 580 ℃.
引文
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[13]FAIRBROTHER A,GARCA-HEMME E,IZQUIERDOROCA V,et al.Development of a selective chemical etch to improve the conversion efficiency of Zn-rich Cu2ZnSnS4solar cells[J].J Am Chem Soc,2012,134(19):8018-8021.
[14]KATAGIRI H,JIMBO K,MAW W S,et al.Development of CZTS-based thin film solar cells[J].Thin Solid Films,2009,517(7):2455-2460.
[2]KATAGIRI H,JIMBO K.Fabrication of earth-abundant CZTS thin film solar cells[C]//Active-Matrix Flatpanel Displays and Devices(AMFPD),2016,The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices.2016:54-55.
[3]张坤,刘芳洋,赖延清,等.太阳电池用Cu2ZnSnS4薄膜的反应溅射原位生长及表征[J].物理学报,2011,60(2):796-802.
[4]张坤,赵联波,陈志伟,等.Cu2ZnSnS4薄膜的制备及其表征[J].中南大学学报(自然科学版),2014,45(11):3740-3745.
[5]杨佳,赵联波,张坤,等.双靶共溅射Cu-Sb合金预制层后硫化法制备CuSbS2光伏薄膜及其性能[J].中南大学学报(自然科学版),2015,46(9):3195-3202.
[6]SCRAGG J J,ERICSON T,KUBART T,et al.Chemical insights into the instability of Cu2ZnSnS4 films during annealing[J].Chemistry of Materials,2011,23(20):4625-4633.
[7]YU YOUNG MOON,SUNGUN NAM,BYUNGSUNG O,et al.Resonant Raman scattering in ZnS epilayers[J].Materials Chemistry and Physics,2003,78(1):149-153.
[8]SU Z,SUN K,HAN Z,et al.Fabrication of Cu2ZnSnS4solar cells with 5.1%efficiency via thermal decomposition and reaction using a non-toxic sol-gel route[J].Journal of Materials Chemistry A,2014,2(2):500-509.
[9]ZHANG K,SU Z,ZHAO L,et al.Improving the conversion efficiency of Cu2ZnSnS4 solar cell by low pressure sulfurization[J].Applied Physics Letters,2014,104(14):141101.
[10]HAN J,JEON S,KIM W K.Selenization mechanisms of Sn and Zn investigated using in situ high-temperature X-ray diffraction[J].Thin Solid Films,2013,546:321-325.
[11]ZILLNER E,PAUL A,JUTIMOOSIK J,et al.Lattice positions of Sn in Cu2ZnSnS4 nanoparticles and thin films studied by synchrotron X-ray absorption near edge structure analysis[J].Applied Physics Letters,2013,102(22):221908.
[12]GUO Q,FORD G M,YANG W C,et al.Fabrication of7.2%efficient CZTSSe solar cells using CZTS nanocrystals[J].J Am Chem Soc,Dec,2010,132(49):17384-17386.
[13]FAIRBROTHER A,GARCA-HEMME E,IZQUIERDOROCA V,et al.Development of a selective chemical etch to improve the conversion efficiency of Zn-rich Cu2ZnSnS4solar cells[J].J Am Chem Soc,2012,134(19):8018-8021.
[14]KATAGIRI H,JIMBO K,MAW W S,et al.Development of CZTS-based thin film solar cells[J].Thin Solid Films,2009,517(7):2455-2460.