硫化和硒化对Cu/Sn/ZnS预置层薄膜结构和性能的影响
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摘要
采用磁控溅射法沉积Cu/Sn/ZnS预置层薄膜,经硫化和硒化热处理制备Cu_2ZnSnS_4和Cu_2ZnSnSe_4薄膜,研究两种热处理方式对薄膜的结构、形貌及性能的影响。结果表明:硫化和硒化热处理制备的Cu_2ZnSnS_4和Cu_2ZnSnSe_4薄膜均为单一锌黄锡矿结构;两种薄膜表面及横截面的颗粒致密且均匀,硒化后薄膜的颗粒尺寸和横截面的附着力均优于硫化后的;预置层经硫化及硒化热处理后薄膜的带隙分别为1.58、1.43 e V,硒化后薄膜的带隙明显小于硫化后的。
Cu_2ZnSnS_4 and Cu_2ZnSnSe_4 thin films were prepared after sulfurization and selenization of Cu/Sn/ZnS preset layers deposited by magnetron sputtering. The effect of two heat treatment methods on the structure,morphology and properties of the thin films was investigated. The results show that the Cu_2ZnSnS_4 and Cu_2ZnSnSe_4 films prepared by sulfurization and selenization are both single kesterite structure. The surface and cross section of the two thin films are dense and uniform. But the particle size of the film and the adhesion of the cross section after the selenization are better than those of the thin film after sulfurization. The band gap of the preset layer after sulfurization and selenization is 1.58 and 1.43 e V,respectively. The band gap of the film after selenization is obviously smaller than that of the film after sulfurization.
Cu_2ZnSnS_4 and Cu_2ZnSnSe_4 thin films were prepared after sulfurization and selenization of Cu/Sn/ZnS preset layers deposited by magnetron sputtering. The effect of two heat treatment methods on the structure,morphology and properties of the thin films was investigated. The results show that the Cu_2ZnSnS_4 and Cu_2ZnSnSe_4 films prepared by sulfurization and selenization are both single kesterite structure. The surface and cross section of the two thin films are dense and uniform. But the particle size of the film and the adhesion of the cross section after the selenization are better than those of the thin film after sulfurization. The band gap of the preset layer after sulfurization and selenization is 1.58 and 1.43 e V,respectively. The band gap of the film after selenization is obviously smaller than that of the film after sulfurization.
引文
[1]GUO Huafei,MA Changhao,ZHANG Kezhi,et al.Dual function of ultrathin Ti intermediate layers in CZTS solar cells:Sulfur blocking and charge enhancement[J].Solar Energy Materials and Solar Cells,2018,175:20-28.
[2]SHIBAYAMA Naoyuki,ZHANG Yiwen,SATAKE Tetsuo,et al.Modelling of an equivalent circuit for Cu2Zn Sn S4-and Cu2Zn Sn Se4-based thin film solar cells[J].RSC Adv,2017,7(41):25347-25352.
[3]LIU Fangyang,YAN Chang,SUN Kaiwen,et al.Light-bias-dependent external quantum efficiency of kesterite Cu2Zn Sn S4solar cells[J].ACS Photonics,2017,4(7):1684-1690.
[4]LIU Dingrong,HAN Dan,HUANG Menglin,et al.Theoretical study on the kesterite solar cells based on Cu2Zn Sn(S,Se)4and related photovoltaic semiconductors[J].Chinese Physics B,2018,27(1):41-52.
[5]LI J J,ZHANG Y,ZHAO W,et al.Solar cells:A temporary barrier effect of the alloy layer during selenization:Tailoring the thickness of Mo Se2for efficient Cu2Zn Sn Se4solar cells[J].Adv Energy Mater,2015,5(9):1402178.
[6]WANG Wei,WINKLER M T,GUNAWAN O,et al.Device characteristics of CZTSSe thin-film solar cells with 12.6%efficiency[J].Adv.Energy Mater,2013,4(7):1301465(1-5).
[7]SHIN B,GUNAWAN O,ZHU Y,et al.Thin film solar cell with8.4%power conversion efficiency using an earth-abundant Cu2Zn Sn S4absorber[J].Prog Photovolt:Res Appl,2013,21(1):72-76.
[8]FAN F J,WU L,GONG M,et al.Tunable synthesis of wurtzitederived Cu2Zn Sn(S1-xSex)4nanocrystals:Theoretical and experimental insights[J].Acs Nano,2013,7(2):1454-1463.
[9]LU Yilei,WANG Shurong,LI Zhishan,et al.Effects of sputtering period on the performance of Cu2Zn Sn S4solar cells[J].Phys B,2017,507:35-40.
[10]徐信,蒋志,李志山,等.基于不同溅射方法制备铜锌锡硫薄膜及太阳电池[J].硅酸盐学报,2018(7):1-9.
[11]TOMBAK A,OCAK Y S,GENISEL M F,et al.Electrical and optical properties of Cu2Zn Sn S4grown by a thermal co-evaporation method and its diode application[J].Mater Sci Semicond Process,2014,28:98-102.
[12]李嘉辉.Cu2Zn Sn(S,Se)4薄膜超声喷雾热分解法制备与特性研究[D].广州:华南理工大学,2017.
[13]蔡倩,梁晓娟,钟家松,等.溶剂热法制备球状Cu2Zn Sn S4纳米晶及其表征[J].物理化学学报,2011,27(12):2920-2926.
[14]高金凤,徐键,陶卫东,等.溶胶-凝胶法制备Cu2Zn Sn S4薄膜及其太阳能电池器件[J].硅酸盐学报,2015,43(12):1765-1771.
[15]SARSWAT P K,SNURE M,FREE M L,et al.CZTS thin films on transparent conducting electrodes by electrochemical technique[J].Thin Solid Films,2012,520(6):1694-1697.
[16]贺显聪.Cu2Zn Sn S4光电薄膜的电沉积制备与物理性能研究[D].南京:南京航空航天大学,2012.
[17]刘仪柯,唐雅琴,蒋良兴,等.溅射Cu-Zn-Sn金属预制层后硫(硒)化法制备Cu2Zn Sn(SxSe(1-x))4薄膜及其光伏特性[J].材料导报,2018,32(9):1412-1416.
[18]LI J B,CHAWLA V,CLEMENS B M.Investigating the role of grain boundaries in CZTS and CZTSSe thin film solar cells with scanning probe microscopy[J].Advanced Materials,2012,24(6):720.
[19]舒博,凌武定,韩奇峰.Cu2Zn Sn(S,Se)4纳米晶薄膜太阳能电池的研究进展[J].上海师范大学学报(自然科学版),2015,44(4):447-460.
[20]SUN Y M,YAO B,MENG X C,et al.Effect of annealing temperature and ambient on formation,composition and bandgap of Cu2Zn Sn S4thin films[J].Acta Physica Polonica A,2014,126(3):751-756.
[21]HE J,SUN L,CHEN S Y,et al.Composition dependence of structure and optical properties of Cu2Zn Sn(S,Se)4solid solutions:An experimental study[J].J Alloy Compd,2012,511(1):129-132.
[2]SHIBAYAMA Naoyuki,ZHANG Yiwen,SATAKE Tetsuo,et al.Modelling of an equivalent circuit for Cu2Zn Sn S4-and Cu2Zn Sn Se4-based thin film solar cells[J].RSC Adv,2017,7(41):25347-25352.
[3]LIU Fangyang,YAN Chang,SUN Kaiwen,et al.Light-bias-dependent external quantum efficiency of kesterite Cu2Zn Sn S4solar cells[J].ACS Photonics,2017,4(7):1684-1690.
[4]LIU Dingrong,HAN Dan,HUANG Menglin,et al.Theoretical study on the kesterite solar cells based on Cu2Zn Sn(S,Se)4and related photovoltaic semiconductors[J].Chinese Physics B,2018,27(1):41-52.
[5]LI J J,ZHANG Y,ZHAO W,et al.Solar cells:A temporary barrier effect of the alloy layer during selenization:Tailoring the thickness of Mo Se2for efficient Cu2Zn Sn Se4solar cells[J].Adv Energy Mater,2015,5(9):1402178.
[6]WANG Wei,WINKLER M T,GUNAWAN O,et al.Device characteristics of CZTSSe thin-film solar cells with 12.6%efficiency[J].Adv.Energy Mater,2013,4(7):1301465(1-5).
[7]SHIN B,GUNAWAN O,ZHU Y,et al.Thin film solar cell with8.4%power conversion efficiency using an earth-abundant Cu2Zn Sn S4absorber[J].Prog Photovolt:Res Appl,2013,21(1):72-76.
[8]FAN F J,WU L,GONG M,et al.Tunable synthesis of wurtzitederived Cu2Zn Sn(S1-xSex)4nanocrystals:Theoretical and experimental insights[J].Acs Nano,2013,7(2):1454-1463.
[9]LU Yilei,WANG Shurong,LI Zhishan,et al.Effects of sputtering period on the performance of Cu2Zn Sn S4solar cells[J].Phys B,2017,507:35-40.
[10]徐信,蒋志,李志山,等.基于不同溅射方法制备铜锌锡硫薄膜及太阳电池[J].硅酸盐学报,2018(7):1-9.
[11]TOMBAK A,OCAK Y S,GENISEL M F,et al.Electrical and optical properties of Cu2Zn Sn S4grown by a thermal co-evaporation method and its diode application[J].Mater Sci Semicond Process,2014,28:98-102.
[12]李嘉辉.Cu2Zn Sn(S,Se)4薄膜超声喷雾热分解法制备与特性研究[D].广州:华南理工大学,2017.
[13]蔡倩,梁晓娟,钟家松,等.溶剂热法制备球状Cu2Zn Sn S4纳米晶及其表征[J].物理化学学报,2011,27(12):2920-2926.
[14]高金凤,徐键,陶卫东,等.溶胶-凝胶法制备Cu2Zn Sn S4薄膜及其太阳能电池器件[J].硅酸盐学报,2015,43(12):1765-1771.
[15]SARSWAT P K,SNURE M,FREE M L,et al.CZTS thin films on transparent conducting electrodes by electrochemical technique[J].Thin Solid Films,2012,520(6):1694-1697.
[16]贺显聪.Cu2Zn Sn S4光电薄膜的电沉积制备与物理性能研究[D].南京:南京航空航天大学,2012.
[17]刘仪柯,唐雅琴,蒋良兴,等.溅射Cu-Zn-Sn金属预制层后硫(硒)化法制备Cu2Zn Sn(SxSe(1-x))4薄膜及其光伏特性[J].材料导报,2018,32(9):1412-1416.
[18]LI J B,CHAWLA V,CLEMENS B M.Investigating the role of grain boundaries in CZTS and CZTSSe thin film solar cells with scanning probe microscopy[J].Advanced Materials,2012,24(6):720.
[19]舒博,凌武定,韩奇峰.Cu2Zn Sn(S,Se)4纳米晶薄膜太阳能电池的研究进展[J].上海师范大学学报(自然科学版),2015,44(4):447-460.
[20]SUN Y M,YAO B,MENG X C,et al.Effect of annealing temperature and ambient on formation,composition and bandgap of Cu2Zn Sn S4thin films[J].Acta Physica Polonica A,2014,126(3):751-756.
[21]HE J,SUN L,CHEN S Y,et al.Composition dependence of structure and optical properties of Cu2Zn Sn(S,Se)4solid solutions:An experimental study[J].J Alloy Compd,2012,511(1):129-132.