摘要
采用磁控溅射法沉积Cu/Sn/ZnS预置层薄膜,经硫化和硒化热处理制备Cu_2ZnSnS_4和Cu_2ZnSnSe_4薄膜,研究两种热处理方式对薄膜的结构、形貌及性能的影响。结果表明:硫化和硒化热处理制备的Cu_2ZnSnS_4和Cu_2ZnSnSe_4薄膜均为单一锌黄锡矿结构;两种薄膜表面及横截面的颗粒致密且均匀,硒化后薄膜的颗粒尺寸和横截面的附着力均优于硫化后的;预置层经硫化及硒化热处理后薄膜的带隙分别为1.58、1.43 e V,硒化后薄膜的带隙明显小于硫化后的。
Cu_2ZnSnS_4 and Cu_2ZnSnSe_4 thin films were prepared after sulfurization and selenization of Cu/Sn/ZnS preset layers deposited by magnetron sputtering. The effect of two heat treatment methods on the structure,morphology and properties of the thin films was investigated. The results show that the Cu_2ZnSnS_4 and Cu_2ZnSnSe_4 films prepared by sulfurization and selenization are both single kesterite structure. The surface and cross section of the two thin films are dense and uniform. But the particle size of the film and the adhesion of the cross section after the selenization are better than those of the thin film after sulfurization. The band gap of the preset layer after sulfurization and selenization is 1.58 and 1.43 e V,respectively. The band gap of the film after selenization is obviously smaller than that of the film after sulfurization.
引文
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